Abstract
In Chap. 2 we learnt how the quantization of the atomic energy levels results in the band structure of the crystalline solid. However, this is not the only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by assuming a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical tunnel effect, while in Sects. 9.2–9.4 the quantization of electron orbits in a strong magnetic field with the formation of Landau levels will be the basis for an understanding of the oscillatory behavior of transport phenomena.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
L. Esaki: Phys. Rev. 109, 603 (1958)
W.K. Chow: Principles of Tunnel Diode Circuits (Wiley, New York 1964) (review)
S.M. Sze: Physics of Semiconductor Devices (Wiley, New York 1969)
D. Böhm: Quantum Theory (Prentice Hall, Englewood Cliffs, NJ 1951)
E.O. Kane: J. Appl. Phys. 32, 83 (1961);
E.O. Kane: J. Phys. Chem. Solids 2, 181 (1960)
J. Karlovsky: Phys. Rev. 127, 419 (1962)
E.O. Kane: Phys. Rev. 131, 79 (1963)
P. Thomas, H.J. Queisser: Phys. Rev. 175, 983 (1968)
P. Thomas: Fachberichte DPG (Teubner, Stuttgart 1968) p. 114 (review) H. Zetsche: Fachberichte DPG (Teubner, Stuttgart 1970) p.172
C. Zener: Proc. Roy. Soc. London 145, 523 (1934)
K.B. McAfee, E.J. Ryder, W. Shockley, M. Sparks: Phys. Rev. 83, 650 (1951)
S.L. Miller. Phys. Rev. 99, 1234 (1955)
L. Esaki, R. Tsu: IBM J. Res. Dev. 14, 61 (1970)
A.Y. Cho: Thin Solid Films 100, 291 (1983)
P.D. Dapkus: J. Crystal Growth 68, 345 (1984)
W. Richter: Festkörperprobleme I Advances in Solid State Physics 26, 335, ed. by P. Grosse (Vieweg, Braunschweig 1986)
R. Tsu, L. Esaki: Appl. Phys. Lett. 22, 562 (1973)
H. Morkoc, J. Chen, U.K. Reddy, T. Henderson, S. Luryi: Appl. Phys. Lett. 49, 70 (1986)
S. Luryi: In High-Speed Semiconductor Devices, ed. by S.M. Sze, (Wiley, New York 1990)
S. Luryi: In Heter o junction Band Discontinuities: Physics and Device Applications, ed. by F. Capasso, G. Margaritondo, (Elsevier, Amsterdam 1987) p.489
T.C.L.G. Sollner, W.D. Goodhue, P.E. Tannenwald, C.D. Parker, D.D. Peck: Appl. Phys. Lett. 43, 588 (1983)
T.C.L.G. Sollner, P.E. Tannenwald, D.D. Peck, W.D. Goodhue: Appl. Phys. Lett. 45, 1319 (1984)
F. Capasso, R.A. Kiehl: J. Appl. Phys. 58, 1366 (1985)
F. Capasso, S. Sen, A.C. Gossard, A.L. Hutchinson, J.E. English: IEEE EDL-7, 573 (1986)
M. Jonson: In Quantum Transport in Semiconductors ed. by D.K. Ferry, C. Jakoboni (Plenum, New York 1991) p. 193
B.D. McCombe, A. Petrou: In Handbook on Semiconductors ed. by T.S. Moss, M. Balkanski (Elsevier, Amsterdam 1994) Vol. 2, p.285 ff
T.P. Pearsall, J.M. Vandenberg, R. Hall, J. Bonar: Phys. Rev. Lett. 63, 2104 (1989)
F.H. Pollak: In Handbook on Semiconductors ed. by T.S. Moss (Elsevier, Amsterdam 1994) Vol. 2, p.527
W. Wegscheider, J. Olajos, U. Menczigar, W. Dondl, G. Abstreiter: J. Crystal Growth 123, 75 (1992)
G. Abstreiter, J. Olajos, R. Schorer, P. Vogl, W. Wegscheider: Semicond. Sci. Technol. 8, S6 (1993)
J. Allègre, J. Calayud, B. Gil, H. Mathieu, H. Tuffigo, G. Lentz, N. Magnea, H. Mariette: Phys. Rev. B 41, 8195(1990)
G.H. Döhler: Phys. Status. Solidi (b) 53, 73, 533 (1972)
K.K. Choi, B.F. Levine, R.J. Malik, J. Walker, C.G. Bethea: Phys. Rev. B 35, 4172 (1987)
J. Kastrup, R. Hey, K.H. Ploog, H.T. Grahn, L.L. Bonilla, M. Kindelau, M. Moscoso, A. Wacker, J. Galan: Phys. Rev. B 55, 2476 (1997)
G.H. Wannier: Elements of Solid State Theory (Cambridge Univ. Press, Cambridge (England) 1959);
G.H. Wannier: Rev. Mod. Phys. 34, 645 (1962);
G.H. Wannier: Phys. Rev. 181, 1364 (1969)
G. Bastard, J.A. Brum, R. Ferreira: Solid State Physics Vol. 44, ed. by H. Ehrenreich, D. Turnbull (Academic, New York 1991) p.316
E.E. Méndez, F. Agulló-Rueda, J.M. Hong: Phys. Rev. Lett. 60, 2426 (1988)
G. von Plessen, P. Thomas: Phys. Rev. B 45, 9185 (1992)
J. J. Bleuse, G. Bastard, P. Voisin: Phys. Rev. Lett. 60, 220 (1988)
P. Voisin, G. Bastard, M. Voos: Phys. Rev. B 29, 935 (1984)
E.E. Méndez, G. Bastard: Phys. Today 46, 34 (June 1993)
G. Bastard: Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Les Ulis Cedex, France, 1987) p.26
K. Unterrainer, B.J. Keay, M.C. Wanke, S.J. Allen, D. Leonhard, G. Medeiros-Ribeiro, U. Bhattacharya, M.J.W. Rodwell: Phys. Rev. Lett. 76, 2973 (1996)
A.A. Ignatov, A.P. Jauho: J. Appl. Phys. 85, 3643 (1999)
S. Winnerl, E. Schomburg, J. Grenzer, H.J. Regl, A.A. Ignatov, A.D. Semenov, K.F. Renk, D.G. Pavel’ev, Yu. Koscharinov, B. Melzer, V. Ustinov, S. Ivanov, S. Schaposchnikov, P.S. Kop’ev: Phys. Rev. B 56, 10303 (1997)
L.D. Landau: Z. Physik 64, 629 (1930)
O. Madelung: Festkörper-Probleme V, 87 (Vieweg, Braunschweig 1960)
R.G. Chambers: Can. J. Phys. 34, 1395 (1956)
G. Bauer, H. Kahlert: Phys. Rev. B 5, 566 (1972); Proc. Int’l Conf. Phys. Semicond., Cambridge MA, 1970 (USAEC, Oak Ridge, TN 1970) p.65
L. Shubnikov, W.J. de Haas: Leiden Commun. 207a, 207c, 207d, 210a (1930)
E.N. Adams, T.D. Holstein: J. Phys. Chem. Solids 10, 254 (1959)
L.I. Schiff: Quantum Mechanics (McGraw-Hill, New York 1968) p.441
M. Cardona: J. Phys. Chem. Solids 24, 1543 (1963)
R.B. Dingle: Proc. Roy. Soc. London A 211, 517 (1952)
R.A. Isaacson, F. Bridges: Solid State Commun. 4, 635 (1966)
G. Bauer, H. Kahlert: Phys. Lett. 41, A351 (1972); also Ref. 9.54 below
L.M. Roth, P.N. Argyres: Semiconductors and Semimetals 1, ed. by R.K. Willardson, A.C. Beer (Academic, New York 1966) p. 159
S.M. Puri, T.H. Geballe: Semiconductors and Semimetals 1, ed. by R.K. Willardson, A.C. Beer (Academic, New York 1966) p.203 (thermomagnetic effects)
W.J. de Haas, P.M. van Alphen: Leiden Commun. 208d, 212a (1930); 220d (1933)
R.A. Smith: The Physical Principles of Thermodynamics (Chapman and Hall, London 1952) p.154
R.A. Smith: Wave Mechanics of Crystalline Solids (Chapman and Hall, London 1961) p.384
J.M. Ziman: Principles of the Theory of Solids (Cambridge Univ. Press, Cambridge 1964) Sect.9.7
D. Shoenberg: In The Physics of Metals 1. Electrons, ed. by J.M. Ziman (Cambridge Univ. Press, Cambridge 1969)
Y. Yafet, R.W. Keyes, E.N. Adams: J. Phys. Chem. Solids 1, 137 (1956)
R.W. Keyes, R.J. Sladek: J. Phys. Chem. Solids 1, 143 (1956)
E.H. Putley: Proc. Phys. Soc. London 76, 802 (1960);
E.H. Putley: J. Phys. Chem. Solids 22, 241 (1961)
L.J. Neuringer: Proc. Int’l Conf. Phys. Semicond., Moscow 1968 (Nauka, Leningrad 1968) p.715
E.H. Putley: Semiconductors and Semimetals 1, ed. by R.K. Willardson, A.C. Beer (Academic, New York 1966) p.289
E.H. Putley: Phys. Status Solidi 6, 571 (1964)
E.R. Brown, M.J. Wengler, T.G. Phillips: J. Appl. Phys. 58, 2051 (1985)
V.L. Gurevich, Yu.A. Firsov: Zh. Eksp. Teor. Fiz. 40, 199 (1961) [Engl, transi.: Sov. Phys. -JETP 13, 137(1961)]
M.I. Klinger: Fiz. Tverd. Tela 3, 1342 (1961) [Engl, transl.: Sov. Phys. — Solid State 3, 974 (1961)]
Yu.A. Firsov, V.L. Gurevich, R.V. Parfeniev, S.S. Shalyt: Phys. Rev. Lett. 12, 660 (1964) for a degenerate electron gas
A.L. Efros: Fiz. Tverd. Tela 3, 2848 (1961) [Engl, transi. Sov. Phys. — Solid State 3, 2079 (1962)]
L. Eaves, R.A. Stradling, R.A. Wood: Proc. Int’l Conf Phys. Semicond., Cambridge MA, 1970, ed. by S.P. Keller, J.C. Hensel, F. Stern (USAEC, Oak Ridge, TN 1970) p.816
V.L. Gurevich, Yu.A. Firsov: Zh. Eksp. Teor. Fiz. 47, 734 (1964) [Engl, transi.: Sov. Phys. -JETP 20, 489(1964)]
R.A. Stradling, R.A. Wood: J. Physique C 1, 1711 (1968)
A.L. Mears, R.A. Stradling, E.K. Inall: J. Physique C 1, 821 (1968)
R.A. Reynolds: Solid State Electron. 11, 385 (1968)
R.A. Wood, R.A. Stradling, I.P. Molodyan: J. Phys. Paris C 3, LI54 (1970)
S.M. Puri, T.H. Geballe: Semiconductors and Semimetals 1, 203 (Academic, New York 1966)
J. Bardeen, L.N. Cooper, J.R. Schrieffer: Phys. Rev. 108, 1157 (1957)
J.R. Tucker: IEEE J. QE-15, 1234 (1979)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1999 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Seeger, K. (1999). Quantum Effects in Transport Phenomena. In: Semiconductor Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03797-3_9
Download citation
DOI: https://doi.org/10.1007/978-3-662-03797-3_9
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-03799-7
Online ISBN: 978-3-662-03797-3
eBook Packages: Springer Book Archive