Carrier Diffusion Processes

  • Karlheinz Seeger


The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient r n with the effect of a diffusion current j = -eD n r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and bipolar transistors.


Diffusion Length Minority Carrier Bipolar Transistor Einstein Relation Surface Recombination Velocity 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1999

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.ViennaAustria
  2. 2.Institut für Materialphysik der UniversitätViennaAustria

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