Abstract
The progress in microelectronics, in particular in silicon technology, still proceeds rapidly, since advancing miniaturization of modules enables a continuous cost reduction in terms of cost per bit of semiconductor memories [1]. This development is joined, however, with a drastically increasing process complexity. Ultra-pure silicon wafers represent the base material of microchip manufacture, where in the case of the 4 M DRAM generation (M DRAM=megabit dynamic random access memory) up to 400 process steps are required in order to produce a microelectronic component with integrated circuits [2]. Besides the large number of metallic, semiconducting and insulating thin films that are necessary for the operation of the device, an even larger number of auxiliary layers are used that must be removed after having fulfilled their purpose. In order to achieve production yields at economic levels, a high level of process maturity with high reliability and stability is an indispensable prerequisite. This claim can only be realized by completely characterized base materials and a tighter and comprehensive process control. Therefore, problem-oriented analytical methods have to be provided and applied from the beginning of the development of a completely new generation of semiconductor devices as well as in their mass production later on.
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Koch, K.H. (1999). Process Analytics in the Semiconductor Industry. In: Process Analytical Chemistry. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03772-0_7
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DOI: https://doi.org/10.1007/978-3-662-03772-0_7
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