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Initial Relaxation of Photoexcited Carriers

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Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 115))

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Abstract

The interband polarization produced by an ultrafast laser is dephased by a variety of scattering processes, as discussed in the previous chapter. For real excitations, carriers and/or excitons remain in the crystal even after the coherence is destroyed. In most cases, the carrier or exciton distribution function after the loss of coherence is non-thermal; i.e., it can not be characterized by a temperature. We discuss in this chapter various experiments in GaAs and related semiconductors which probe these non-thermal distribution functions of free carriers and their relaxation to thermalized, hot distribution functions (non-thermal regime of Chap. 1). A discussion of non-thermal excitons is postponed to Chap. 6.

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  1. Bell Laboratories, Lucent Technologies, 101 Crawfords Corner Road, Holmdel, NJ, 07733, USA

    Dr. Jagdeep Shah

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Shah, J. (1999). Initial Relaxation of Photoexcited Carriers. In: Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Series in Solid-State Sciences, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03770-6_3

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  • DOI: https://doi.org/10.1007/978-3-662-03770-6_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08391-4

  • Online ISBN: 978-3-662-03770-6

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