Instead of using thermal energy for decomposition and chemical reaction of the source gas, plasma CVD uses the glow discharge in non-equilibrium plasma to ionize and excite the source gas and generate ions and radicals. Plasma CVD utilizes their reactiveness for depositing thin films. Plasma CVD began to be used in the industry with silicon nitride films as a final passivation layer to meet the requirement for highly reliable MOS LSIs. Later on, in the multi-layer metallization area, with the need to deposit inter-layer isolation films at low temperature, silicon dioxide plasma CVD films started to be used. Then plasma CVD came widely into use for LSI production and will be used even more in the future.
KeywordsProcess Equipment Plasma Region Particle Generation Particle Source Exhaust Pipe
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