Measurement of Particles on Wafer Surfaces

Abstract

This chapter will explain the present status and future development of particle detection techniques for the wafer surface. Due to their practicality and efficiency, laser scanning and laser light scattering are widely used. The measurement techniques for the investigation of mirror-polished wafers (in a general sense these are unpatterned wafers) and wafers after pattern formation (or patterned wafers) are divided into two categories. They differ strongly in their detection principles. The use of particle detection on the mirror-polished and filmed wafers plays a major role in monitoring particle generation from equipment. For in-line monitoring and yield analysis, the investigation of patterned wafers is efficient.