Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs

  • Shuji Nakamura
  • Gerhard Fasol


The present Chap. 9 shows, how Zn-, and Si-co-doping together with other improvements can dramatically improve the output power and quantum efficiency. While the previous Chap. 8 described the development of InGaN superlattice and double heterostructure based light emitting diodes in the 100 µW, 0.15% range, the present Chap. 9 will demonstrate the developments which have led to LED’s in the 3 mW output power — 5% efficiency class. Several research developments lead to this strong improvement. One is Zn-doping, another is the replacement of LEEBI by thermal annealing. Thus both Sects. 8.8 and 9.1 discuss InGaN double heterostructure blue diodes. However, in Sect. 9.1 Zn-doping and thermal annealing are used together with other advances discussed below.


Peak Wavelength Traffic Light External Quantum Efficiency Luminous Intensity Forward Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • Shuji Nakamura
    • 1
  • Gerhard Fasol
    • 2
  1. 1.Nichia Chemical Industries Ltd.Anan, Tokushima-ken 774Japan
  2. 2.Eurotechnology Japan Ltd.Shinjuku-ku, Tokyo 160Japan

Personalised recommendations