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Carrier Transport in Semiconductor Nanostructures

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Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 115))

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Abstract

We discuss in this chapter how ultrafast optical spectroscopy techniques can be used to investigate the dynamics of carrier transport in semiconductors over macroscopic distances. Traditionally, carrier transport has been investigated by electrical time-of-flight techniques [8.1], but all-optical techniques offer many advantages. Optical markers, successfully used in the study of tunneling, as discussed in Chap. 7, provide one means of investigating dynamics of transport. We will discuss an extension of this concept to multiple optical markers in this chapter. We will also discuss how screening of electric field in the sample caused by the motion of photoexcited electrons and holes in the opposite directions can be used to obtain information about carrier transport dynamics.

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  1. Bell Laboratories, Lucent Technologies, Holmdel, NJ., 07733, USA

    Dr. Jagdeep Shah

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Shah, J. (1996). Carrier Transport in Semiconductor Nanostructures. In: Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Series in Solid-State Sciences, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03299-2_8

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  • DOI: https://doi.org/10.1007/978-3-662-03299-2_8

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