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Cooling of Hot Carriers

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Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 115))

Abstract

As discussed in Chap. 3, the non-thermal, photoexcited electrons and holes interact among themselves and other carriers present in the semiconductor. They achieve a distribution function characterized by a temperature in times of the order of 100 fs for the typical densities present in most femtosecond experiments. Initially, the temperatures of the electrons and the holes may be different, but a common temperature T c for the carrier system is typically achieved in times of the order of a picosecond. The thermalized carriers are hot, i.e., their distribution function is characterized by a temperature T c higher than the lattice temperature T L. Although some of the energy of the electronic system is lost to the lattice via carrier-phonon interactions during this thermalization process, most of the energy typically remains within the electronic system so that the non-thermal regime provides information primarily about carrier-carrier interactions. The next phase of the relaxation occurs as the thermalized, hot electron-hole distributions cool and approach the lattice temperature. Much of our information about the carrier energy loss processes to the lattice comes from a study of this cooling process.

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    Dr. Jagdeep Shah

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Shah, J. (1996). Cooling of Hot Carriers. In: Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Series in Solid-State Sciences, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03299-2_4

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