Surface Space-Charge Region in Thermal Equilibrium

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)

Abstract

Due to the low carrier densities in non-degenerately doped semiconductors, spatially extended space-charge layers may be present at semiconductor surfaces and interfaces. The resulting band bending is obtained by solving Poisson’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.

Keywords

GaAs 

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References

  1. 1.
    A review of this exciting field was given by Ando et al. [1982].Google Scholar
  2. 2.
    These considerations apply to both electrons and holes. Therefore, the effective mass carries no distinguishing subscripts.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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