Abstract
Due to the low carrier densities in non-degenerately doped semiconductors, spatially extended space-charge layers may be present at semiconductor surfaces and interfaces. The resulting band bending is obtained by solving Poisson’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.
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A review of this exciting field was given by Ando et al. [1982].
These considerations apply to both electrons and holes. Therefore, the effective mass carries no distinguishing subscripts.
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© 1995 Springer-Verlag Berlin Heidelberg
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Mönch, W. (1995). Surface Space-Charge Region in Thermal Equilibrium. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03134-6_2
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DOI: https://doi.org/10.1007/978-3-662-03134-6_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-58625-8
Online ISBN: 978-3-662-03134-6
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