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Surface Space-Charge Region in Thermal Equilibrium

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)

Abstract

Due to the low carrier densities in non-degenerately doped semiconductors, spatially extended space-charge layers may be present at semiconductor surfaces and interfaces. The resulting band bending is obtained by solving Poisson’s equation. In thermal equilibrium, the space charge is balanced by a net charge in electronic surface or interface states. Depending on the sign and the magnitude of the surface band-bending, accumulation, depletion, and inversion layers are to be distinguished. Larger carrier concentrations in accumulation and inversion layers lead to quantum size-effects.

Keywords

Space Charge Minority Carrier Depletion Layer Inversion Layer Accumulation Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    A review of this exciting field was given by Ando et al. [1982].Google Scholar
  2. 2.
    These considerations apply to both electrons and holes. Therefore, the effective mass carries no distinguishing subscripts.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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