Abstract
On Si(111) surfaces, group-III atoms induce (√3 × √3)R30° reconstructions. Al, Ga, and In atoms have larger covalent radii than silicon and adsorb in T 4 sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying T 4 sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional S5 sites beneath silicon atoms in T 4 sites are energetically much more favorable configurations for the small boron atoms.
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© 1995 Springer-Verlag Berlin Heidelberg
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Mönch, W. (1995). Group-III Adatoms on Silicon Surfaces. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03134-6_15
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DOI: https://doi.org/10.1007/978-3-662-03134-6_15
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-58625-8
Online ISBN: 978-3-662-03134-6
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