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Theory of silicon crystallites. Part II

  • C. Delerue
  • G. Allan
  • E. Martin
  • M. Lannoo
Part of the Centre de Physique des Houches book series (LHWINTER, volume 1)

Abstract

Although the photoluminescence of porous silicon was discovered some time ago [1] its origin is not yet firmly established. The most natural explanation is the quantum confinement in silicon crystallites [2 to 5] but states localized at the surface of the crystallites, e.g. due to dangling bonds should play an important role [2, 6]. Our aim here is thus to develop some aspects of the theory of silicon crystallites which could be helpful for the interpretation of experimental data. The contents is complementary to the Chapter written by M. Hybertsen in the same volume.

Keywords

Porous Silicon Stokes Shift Dangling Bond Radiative Capture Exchange Splitting 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • C. Delerue
    • 1
  • G. Allan
    • 1
  • E. Martin
    • 1
  • M. Lannoo
    • 1
  1. 1.IEMN, Département ISENLille cedexFrance

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