Abstract
Although the photoluminescence of porous silicon was discovered some time ago [1] its origin is not yet firmly established. The most natural explanation is the quantum confinement in silicon crystallites [2 to 5] but states localized at the surface of the crystallites, e.g. due to dangling bonds should play an important role [2, 6]. Our aim here is thus to develop some aspects of the theory of silicon crystallites which could be helpful for the interpretation of experimental data. The contents is complementary to the Chapter written by M. Hybertsen in the same volume.
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Delerue, C., Allan, G., Martin, E., Lannoo, M. (1995). Theory of silicon crystallites. Part II. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_6
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