Abstract
One of the most commonly used hypothesis to explain the light emission in the visible range from porous silicon is the confinement of charge carriers in the quantum sized crystallites which are formed in the material [1] [2] [3]. The rather good emission efficiency which is obtained also supposes an efficient passivation of the large specific surface of the material. Such passivation is readily obtained just after formation of the porous layer, and it is provided by the Si-H surface coverage which results from the anodic attack of the crystalline silicon in hydrofluoric acid (HF) solutions [4]. However, this passivation is not permanent, and the result is that photoluminescence degradation is often observed, for example upon annealing [5] or under illumination.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
V. Lehmann, H. Föll, J. Electrochem. Soc. 137, 653 (1990).
A. Bsiesy, J. C. Vial, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, R. Romestain, A. Wasiela, A. Halimaoui, G. Bomchil, Surf. Sci. 254, 195 (1991).
A. Venkateswara Rao, F. Ozanam, J. N. CHazalviel, J. Electrochem. Soc. 138, 153 (1991).
C. Tsai, K. H. Li, J. Sarathy, S. Shih, J. C. Campbell, B. K. Hance, J. M. White, Appl. Phys. Lett. 59, 2814 (1991)
M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, K. Suma, Appl. Phys. Lett. 55, 562 (1989).
A. Halimaoui, Thèse de Doctorat d’Etat, Grenoble University, 1991.
A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, J.C. Oberlin, J. Electrochem. Soc, 138, 3450 (1991).
M. Ligeon, F. Muller, R. Hérino, F. Gaspard, J.C. Vial, R. Romestain, S. Billat, A. Bsiesy, J. Electrochem. Soc. 74, 1265 (1993)
W. Waring and E.A. Benjamini, J. Electrochem. Soc. 111, 1256 (1964)
J.N. Chazalviel, F. Ozanam in Microcrystalline Semiconductors: Material Science and Devices edited by P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu, Y. Aoyagi (Mater. Res. Soc. Proc. 283, Boston, USA, 1992 ) pp. 359–364
F. Muller, R. Hérino, M. Ligeon, F. Gaspard, R. Romestain, J.C. Vial, A. Bsiesy, J. Lumin. 57, 283 (1993)
J. C. Vial, A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, R. Romestain, Mac Farlane, Phys. Rev. B 45, 14171 (1992)
R. Hérino, G. Bomchil, K. Barla, C. Bertrand, J.L. Ginoux, J. Electrochem. Soc. 134, 1994 (1987)
H. Munder, C. Andrzejak, M. G. Berger, U. Klemradt, H. Luth, R. Hérino, M. Ligeon, Thin Sol. Films 221, 27 (1992)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Herino, R. (1995). Luminescence of porous silicon after electrochemical oxidation. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_4
Download citation
DOI: https://doi.org/10.1007/978-3-662-03120-9_4
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-58936-5
Online ISBN: 978-3-662-03120-9
eBook Packages: Springer Book Archive