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The silicon/electrolyte interface

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Porous Silicon Science and Technology

Part of the book series: Centre de Physique des Houches ((LHWINTER,volume 1))

Abstract

Silicon is known as a highly oxidizable material. Stability of silicon electrodes has been a major problem to electrochemists. Fortunately, the ability of this material to oxidize or dissolve may be taken as an advantage, for example for the formation of anodic oxides or the generation of porous silicon. The fundamental aspects of the latter phenomena are nonetheless complex, and we will adopt a presentation going from the simpler systems to the more complex ones. The most nearly ideal and simple silicon/electrolyte interfaces may be found with certain organic solvents. We will recall typical results obtained at n-Si/organic-electrolyte interfaces and from that we will go to a presentation of the present ideas about surface chemistry of silicon in ambient and in contact with wet, fluoride or alkaline media. Then we will turn to the increasingly complex situations encountered in aqueous electrochemistry. We will successively consider the interfaces under cathodic polarization, the interfaces under anodic polarization in non-fluoride electrolytes, which lead to anodic oxide formation, and the interfaces under anodic polarization in fluoride media, which may lead either to electropolishing or to porous silicon formation.

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Authors and Affiliations

  1. Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128, Palaiseau, France

    J.-N. Chazalviel

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  1. J.-N. Chazalviel
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Editors and Affiliations

  1. CNRS-Université Joseph Fourier, France

    Jean-Claude Vial

  2. CNRS-Université Aix-Marseille 2, France

    Jacques Derrien

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Chazalviel, JN. (1995). The silicon/electrolyte interface. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_2

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  • DOI: https://doi.org/10.1007/978-3-662-03120-9_2

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