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Optoelectronic properties of porous silicon — The electroluminescent devices

  • W. Lang
  • P. Steiner
  • F. Kozlowski
Part of the Centre de Physique des Houches book series (LHWINTER, volume 1)

Abstract

The discovery of photoluminescence1 in porous silicon and the understanding of the growth of nanostructures2 opened the field to a large amount of work on this material. For a practical application, electroluminescence (EL) is the crucial point. The development of EL devices in porous silicon technology is faced with some specific problems: The material has a large internal surface and therefore shows a tendency to undergo chemical change when exposed to air. Furthermore, nanoporous silicon shows a very low electrical conductivity, which causes problems for efficient EL. On the other hand, the EL with wet contacts3,4 is very efficient. This shows that in principle porous silicon is a good material for EL.

Keywords

Quantum Efficiency Porous Silicon Forward Bias Contact Layer External Quantum Efficiency 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • W. Lang
    • 1
  • P. Steiner
    • 1
  • F. Kozlowski
    • 1
  1. 1.Fraunhofer Institute for Solid State Technology MunichGermany

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