Abstract
The discovery of photoluminescence1 in porous silicon and the understanding of the growth of nanostructures2 opened the field to a large amount of work on this material. For a practical application, electroluminescence (EL) is the crucial point. The development of EL devices in porous silicon technology is faced with some specific problems: The material has a large internal surface and therefore shows a tendency to undergo chemical change when exposed to air. Furthermore, nanoporous silicon shows a very low electrical conductivity, which causes problems for efficient EL. On the other hand, the EL with wet contacts3,4 is very efficient. This shows that in principle porous silicon is a good material for EL.
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Lang, W., Steiner, P., Kozlowski, F. (1995). Optoelectronic properties of porous silicon — The electroluminescent devices. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_17
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DOI: https://doi.org/10.1007/978-3-662-03120-9_17
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