Abstract
IR spectroscopy is a non-destructive analytical tool widely used in material research (Ferraro, 1990). In semiconductor technology it is a standard technique to determine the concentration of dopants and impurities. In addition it can be used to obtain information on the properties of free charge carriers and thicknesses of epitaxial layers.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Adachi S., Phys. Rev. B 38 (1988), 12966
Bell R.J., Introduction to Fourier Transform Spectroscopy (Academic Press, New York 1972)
Berger M. et al., J. Phys. D 27 (1994), 1333
Bergman D., Phys. Rep. C 43 (1978), 377
Bruggeman D.A.G., Ann. Phys. 24 (1935), 636
Ferraro J.R., Krishnan K.(Ed.), Practical Fourier Transform Infrared Spectroscopy ( Academic Press, San Diego 1990 )
Forouhi A.R., Bloomer I., in: Handbook of opt. const. II (ed. by D. Palik, New York, Academic, 1991 ), 151
Geick R., Topics in Current Chemistry 58 ( Springer, Berlin 1975 ), 73
Griffiths P.R., de Haseth J.A., Fourier Transform Infrared Spectrometry ( John Wiley & Sons, New York 1986 )
Grosse P., Wynands R., Appl. Phys. B 48 (1989), 59
Hövel H., Grosse P., Theiß W., Journal of Noncryst. Solids 145 (1992), 159
Hornfeck M., Clasen R., Theiß W., Journal of Noncryst. Solids 145 (1992), 154
Jackson J.D., Classical Electrodynamics (John Wiley & Sons, New York 1975 )
Khintchine A., Math. Ann. 109 (1934), 604
Kittel C., Introduction to Solid State Physics, 5th Edition ( John Wiley & Sons, New York 1976 )
Kreibig U., v.Fragstein C., Z.Physik 224 (1969), 307
Martens H., Naes T., Multivariate Calibration, (John Wiley & Sons, New York 1989)
Maxwell Garnett J.C., Philos. Trans. R. Soc. London 203 (1904), 385
Münder H. et al., in ‘Optical Properties of Low Dimensional Silicon Structures’, ed. by Bensahel D.C., Canham L.T., Ossicini S., ( Kluwer Academic Publ., Dordrecht, Boston, London 1993 ), 75
Theiß W., in Festkörperprobleme/Advances in Solid State Physics 33, ed. by R.Helbig (Vieweg, Braunschweig, Wiesbaden 1994 ), 149
Theiß W. et al., Mat. Res. Soc. Symp. Proc. 238 (1993), 215
Wiener N., Act. Math. Stockholm 55 (1930), 117
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Theiss, W. (1995). IR spectroscopy of porous silicon. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_11
Download citation
DOI: https://doi.org/10.1007/978-3-662-03120-9_11
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-58936-5
Online ISBN: 978-3-662-03120-9
eBook Packages: Springer Book Archive