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Porous Silicon Science and Technology pp 157–187Cite as

Ion beam analysis of thin films. Applications to porous silicon

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Part of the book series: Centre de Physique des Houches ((LHWINTER,volume 1))

Abstract

The aim of this paper is twofold: 1)- to present a summary of the fundamental interactions between ion beam (such as proton, deuteron or helium) of MeV energy and solids, interactions that are used in material analysis techniques such as Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA), and 2)- to illustrate the use of these techniques to determine the composition of the surface and outer microns of material. Some examples will be given concerning porous silicon layers.

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Author information

Authors and Affiliations

  1. Groupe de Physique des Solides, URA 17 du CNRS, Universités Paris 7 et 6, Tour 23, 2 place Jussieu, 75251, Paris cedex 05, France

    C. Ortega, A. Grosman & V. Morazzani

Authors
  1. C. Ortega
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  2. A. Grosman
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  3. V. Morazzani
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Editor information

Editors and Affiliations

  1. CNRS-Université Joseph Fourier, France

    Jean-Claude Vial

  2. CNRS-Université Aix-Marseille 2, France

    Jacques Derrien

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© 1995 Springer-Verlag Berlin Heidelberg

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Ortega, C., Grosman, A., Morazzani, V. (1995). Ion beam analysis of thin films. Applications to porous silicon. In: Vial, JC., Derrien, J. (eds) Porous Silicon Science and Technology. Centre de Physique des Houches, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03120-9_10

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  • DOI: https://doi.org/10.1007/978-3-662-03120-9_10

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-58936-5

  • Online ISBN: 978-3-662-03120-9

  • eBook Packages: Springer Book Archive

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