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Cleaved {110} Surfaces of III–V and II–VI Compound Semiconductors

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)

Abstract

Compound semiconductors, which crystallize in the cubic zincblende structure, cleave along {110} planes. Such planes contain the same number of anions and cations per unit area and are thus intrinsically neutral. With {110} surfaces of compound semiconductors no reconstructions are observed but the surface atoms relax from the positions expected for a bulklike termination such that the cation-anion zigzag chains become tilted with the anions being raised. As a result of this relaxation, the total valence charge remains the same around surface and bulk atoms. The dangling-bond surface states are lower in energy at the surface anions than at the surface cations. The band-structure term of the total energy is thus lowered with respect to a bulldike termination when the dangling bonds are completely occupied at the anions but empty at the cations. The surface relaxation indeed shifts the cation dangling-bond band to above the conduction-band minimum. The lowering of the band-structure energy obviously overcompensates the strain energy correlated with the tilting of the cation-anion chains.

Keywords

Compound Semiconductor Scan Tunneling Microscopy Image Zincblende Structure Surface Phonon Energy Distribution Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für Festkörperphysik, Fachbereich 10Universität DuisburgDuisburgGermany

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