Abstract
The oxidation of silicon has been thoroughly investigated since silicon dioxide plays a most important role in silicon devices. Besides the extremely high stability, low diffusion coefficients for specific dopants in SiO2, a high dielectric strength in the bulk of SiO2 films, and a low density of interface states at SiO2/Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, native oxides of III-V compound semiconductors possess none of these favorable properties.
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© 1993 Springer-Verlag Berlin Heidelberg
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Mönch, W. (1993). Oxidation of Silicon and III–V Compound Semiconductors. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02882-7_17
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DOI: https://doi.org/10.1007/978-3-662-02882-7_17
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-02884-1
Online ISBN: 978-3-662-02882-7
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