Abstract
As the complexity and density of VLSI and LSI circuits has increased, the requirement for a better understanding of device and material parameters, and improved process control have become paramount. Nearly all semiconductor devices are fabricated in the first 1 or 2 µm of the semiconductor surface and some devices such as MOSFETs can be classified as truly semiconductor surface devices. With the recent advent of materials growth technologies such as molecular beam epitaxy (Chap. 12), new semiconductors can be made with internal structures which have atomic layer dimensions. These structures can be positioned within a few atomic layers of the surface. It is not surprising then that many of the surface analysis techniques described in this book have become standard tools for the semiconductor device and material technologist.
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Dell, J.M., Price, G.L. (1992). Applications to Devices and Device Materials. In: O’Connor, D.J., Sexton, B.A., Smart, R.S.C. (eds) Surface Analysis Methods in Materials Science. Springer Series in Surface Sciences, vol 23. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02767-7_18
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DOI: https://doi.org/10.1007/978-3-662-02767-7_18
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