Chemisorption on Semiconductor Surfaces

  • Michel Lannoo
  • Paul Friedel
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 16)

Abstract

There have been many studies of chemisorption on metals and semiconductors and it is impossible to treat all aspects of this problem here. For this reason we have focussed our interest on two particular cases of chemisorption on semiconductors. The first one concerns the growth of a metallic layer for which there have been recent studies at low temperatures. This is directly connected to the Schottky barrier height which will be discussed in Chap. 7. The second system which is developed in Sect. 6.2 is the As layer on the (111) face of covalent semiconductors which represents an extremely well defined problem from the structural point of view and can be considered as a precise test for the theory.

Keywords

Arsenic GaAs Chemisorption 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 6.1
    K. Stiles, D. Mao, S.F. Homg, A. Kahn, J. McKinley, D.G. Kilday, G. Margaritondo: in Metallization and Metal Semiconductor Interfaces, NATO ASI Series, ed. by I.P. Batra, Plenum Press (1989)Google Scholar
  2. 6.2
    W.E. Spicer, R. Cao, K. Miyano, C. McCants, T.T. Chiang, CJ. Spindt, N. Newman, T. Kendelewicz, I. Lindau: IbidemGoogle Scholar
  3. 6.3
    W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, I. Lindau: J. Vac. Sci. Technol. 16, 1427 (1979);CrossRefGoogle Scholar
  4. W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, I. Lindau: J. Vac. Sci. Technol. 17, 10. 19 (1980)Google Scholar
  5. 6.4
    K. Stiles, A. Kahn, D.G. Kilday, G. Margaritondo: J. Vac. Sci. Technol. B 5, 987 (1987)CrossRefGoogle Scholar
  6. 6.5
    K. Stiles, S.F. Honig, A. Kahn, J. McKinley, D.G. Kilday, G. Margaritondo: J. Vac. Sci. Technol. A 6, 1462 (1988) and B 6 (1988), in pressGoogle Scholar
  7. 6.6
    R. Cao, K. Miyano, T. Kendelewicz, K.K. Chin, I. Lindau, W.E. Spicer: J. Vac. Sci. Technol. B 5, 998 (1987)CrossRefGoogle Scholar
  8. 6.7
    K. Stiles, A. Kahn: Phys. Rev. Leu. 60, 440 (1988)CrossRefGoogle Scholar
  9. 6.8
    R. Cao, K. Miyano, T. Kendelewicz, I. Lindau, W.E. Spicer: J. Vac. Sci. A 6, 1571 (1988)CrossRefGoogle Scholar
  10. 6.9
    W. Monch: Europhys. Lett. 7 (3), 275 (1988);CrossRefGoogle Scholar
  11. W. Monch: J. Vac. Sci. Technol. B 6 (4), 1270 (1988)CrossRefGoogle Scholar
  12. 6.10
    T. Kendelewicz, P. Soukiassian, M.H. Bacshi, Z. Hurych, I. Lindau, WE. Spicer: Phys. Rev. B 38, 7568 (1988);CrossRefGoogle Scholar
  13. T. Kendelewicz, P. Soukiassian, M.H. Bacshi, Z. Hurych, I. Lindau, WE. Spicer: J. Vac. Sci. Technol. B 6, 1331 (1988)CrossRefGoogle Scholar
  14. 6.11
    G. Picoli, A. Chomette, M. Lannoo: Phys. Rev. B 30, 7138 (1984)CrossRefGoogle Scholar
  15. 6.12
    D.M. Newns: J. Chem. Phys. 50, 4572 (1969)CrossRefGoogle Scholar
  16. 6.13
    For a proof in LDA see J.F. Janak: Phys. Rev. B 18, 7165 (1978)Google Scholar
  17. 6.14
    E.Clementi, D.L. Raimondi, W.P. Reinhardt: J. Chem. Phys. 17, 1300 (1967)CrossRefGoogle Scholar
  18. 6.15
    I. Lefebvre, M. Lannon, G. Allan, A. Ibanez, J. Fourcade, J.C. Jumas, E. Beaurepaire: Phys. Rev. Lett. 59, 2471 (1987);CrossRefGoogle Scholar
  19. I. Lefebvre, M. Lannon, G. Allan, L. Martinage: Phys. Rev. B 38, 8593 (1988)CrossRefGoogle Scholar
  20. 6.16
    W.A. Harrison: Phys. Rev. B 24, 5835 (1981)CrossRefGoogle Scholar
  21. 6.17
    DN. Talwar, C.S. Ting: Phys. Rev. B 25, 2660 (1982)CrossRefGoogle Scholar
  22. 6.18
    W.A. Harrison: Phys. Rev. B 31, 2121 (1985)CrossRefGoogle Scholar
  23. 6.19
    J.B. Mann: In Atomic Structure Calculations I (Clearing House for Technical Information, Springfield, VA 1967)Google Scholar
  24. 6.20
    A. Zur, McGill, DL. Smith: Phys. Rev. B 28, 2060 (1983)CrossRefGoogle Scholar
  25. 6.21
    I. Lefebvre, M. Lannon, G. Allan: Europhysics Letters 10, 359 (1989)CrossRefGoogle Scholar
  26. 6.22
    J.E. Klepeis, W.A. Harrison: J. Vac. Sci. Technol. B 7, 964 (1989)CrossRefGoogle Scholar
  27. 6.23
    M.S. Hybertsen, S.G. Louie: Phys. Rev. B 38, 4033 (1988)CrossRefGoogle Scholar
  28. 6.24
    O. Madelung: Introduction to Solid State Theory, Springer Ser. Solid-State Sci. Vol. 2 ( Springer, Berlin, Heidelberg 1978 )Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Michel Lannoo
    • 1
  • Paul Friedel
    • 2
  1. 1.Laboratoire d’Etudes des Surfaces et InterfacesI.S.E.N. Institut Supérieur d’Électronique du NordLille CedexFrance
  2. 2.Laboratoires D’Électronique PhilipsLimeil-Brévannes CedexFrance

Personalised recommendations