Chemisorption on Semiconductor Surfaces
There have been many studies of chemisorption on metals and semiconductors and it is impossible to treat all aspects of this problem here. For this reason we have focussed our interest on two particular cases of chemisorption on semiconductors. The first one concerns the growth of a metallic layer for which there have been recent studies at low temperatures. This is directly connected to the Schottky barrier height which will be discussed in Chap. 7. The second system which is developed in Sect. 6.2 is the As layer on the (111) face of covalent semiconductors which represents an extremely well defined problem from the structural point of view and can be considered as a precise test for the theory.
KeywordsArsenic GaAs Chemisorption
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