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Carrier Transport in the Warped-Sphere Model

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

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Abstract

The valence bands of germanium, silicon and the III-V compounds have an extremum at k = 0 and are degenerate there. The constant-energy surfaces for this case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28 a-2.28 c). In the zincblende lattice typical for III-V compounds, there is no center of inversion, in contrast to the diamond lattice.

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1991 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1991). Carrier Transport in the Warped-Sphere Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02663-2_8

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  • DOI: https://doi.org/10.1007/978-3-662-02663-2_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02665-6

  • Online ISBN: 978-3-662-02663-2

  • eBook Packages: Springer Book Archive

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