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Carrier Diffusion Processes

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Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

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Abstract

The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇ r n with the effect of a diffusion current j = - e D n ∇ r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1991 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1991). Carrier Diffusion Processes. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02663-2_5

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  • DOI: https://doi.org/10.1007/978-3-662-02663-2_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02665-6

  • Online ISBN: 978-3-662-02663-2

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