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Semiconductor Statistics

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)

Abstract

The periodic potential distribution of an electron in a crystal shown in Fig. 2.4 involves N discrete levels if the crystal contains N atoms, as we have seen in Fig. 2.8. A discussion of these levels can be confined to the first Brillouin zone. We saw in the last chapter that due to the crystal periodicity, the electron wave functions, which in one dimension are ψ(x) = u (x) exp (i k x), also have to be periodic (Bloch functions).

Keywords

Fermi Energy Entropy Density Impurity Level Occupation Probability Internal Energy Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 3.1
    E. Spenke: Electronic Semiconductors (McGraw-Hill, New York 1965) Chap.8Google Scholar
  2. 3.2
    E. Schrödinger: Statistical Thermodynamics (Cambridge Univ. Press, Cambridge 1948)Google Scholar
  3. 3.3
    J.S. Blakemore: Semiconductor Statistics (Pergamon, Oxford 1962)Google Scholar
  4. 3.3a
    Appendix B J. McDougall, E.C. Stoner. Philos. Trans. A 237, 67 (1938)CrossRefGoogle Scholar
  5. 3.3b
    P. Rhodes: Proc. Roy. Soc. London A 204, 396 (1950)CrossRefGoogle Scholar
  6. 3.4
    H.J. Goldsmid: Problems in Solid State Physics (Academic, New York 1969) p.354Google Scholar
  7. 3.5
    H. van Cong, S. Brunet, C. Charar, J.L. Birman, M. Averons: Solid State Commun. 45, 611 (1983)CrossRefGoogle Scholar
  8. 3.6
    W. Jantsch: Dissertation, Univ. Vienna, Austria (1971)Google Scholar
  9. 3.7
    J.A. van Vechten: Handbook on Semiconductors, Vol.3 ed. by S.P. Keller (North-Holland, Amsterdam 1980) p.1 (review)Google Scholar
  10. 3.8
    H. Fritzsche: Phys. Rev. 120, 1120 (1960)CrossRefGoogle Scholar
  11. 3.9
    F. Bassani, G. Iadonisi, B. Preziosi: Rep. Prog. Phys. 37, No.9, 1099 (1974)CrossRefGoogle Scholar
  12. 3.10
    S.H. Koenig, R.D. Brown III, W. Schillinger: Phys. Rev. 128, 1668 (1962) and literature cited thereCrossRefGoogle Scholar
  13. 3.11
    D. Long, C.D. Motchenbacher, J. Myers: J. Appl. Phys. 30, 353 (1959)CrossRefGoogle Scholar
  14. 3.12
    J. Blakemore: Semiconductor Statistics (Pergamon, Oxford 1962) Sect.3.2.4Google Scholar
  15. 3.13
    J.S. Blakemore: Philos. Mag. 4, 560 (1959)CrossRefGoogle Scholar
  16. 3.14
    N.B. Hannay (ed.): Semiconductors (Reinhold, New York 1959) p.31Google Scholar
  17. 3.15
    E.M. Conwell: Proc. IRE 46, 1281 (1958)CrossRefGoogle Scholar
  18. 3.16
    T.H. Geballe: In [Ref.3.13, pp.341, 342]Google Scholar
  19. 3.17
    R. Newman, W.W. Tyler: Solid State Physics 8, 62 (Academic, New York 1962)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Institut für FestkörperphysikUniversität WienWienAustria

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