Abstract
The valence bands of germanium, silicon and the III–V compounds have an extremum at k = 0 and are degenerate there. The constant-energy surfaces for this case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28 a–2.28 c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.
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Seeger, K. (1989). Carrier Transport in the Warped-Sphere Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02576-5_8
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