Carrier Diffusion Processes

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)

Abstract

The discussion of (4.10.8–C11) has shown that a temperature gradient in a conductor yields a concentration gradient r n with the effect of a diffusion current j=e D n r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

Keywords

Quartz Phosphorus Sulfide Lithium Cadmium 

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References

  1. 5.1
    F. Stockmann: Halbleiterprobleme VI, 279 ( Vieweg, Braunschweig 1961 )Google Scholar
  2. 5.
    R.B. Adler, A.C. Smith, R.L. Longini: Introduction to Semiconductor Physics (Wiley, New York 1964)Google Scholar
  3. 5.3
    J.P. McKelvey: In Problems in Solid State Physics, ed. by H. Goldsmid ( Academic, New York 1968 ) p. 82Google Scholar
  4. 5.
    J.R. Haynes, W. Shockley: Phys. Rev. 81 835 (1951)Google Scholar
  5. 5.5
    W. Schottky: Z. Phys. 118, 539 (1942)ADSMATHCrossRefGoogle Scholar
  6. W. Shockley: Bell Syst. Tech. J. 28 435 (1949)Google Scholar
  7. 5.7
    C.T. Sah, R.N. Noyce, W. Shockley: Proc. IRE 45, 1228 (1957)CrossRefGoogle Scholar
  8. 5.8
    S.M. Sze: Physics of Semiconductor Devices, 2nd ed. ( Wiley, New York 1981 ) p. 92Google Scholar
  9. 5.9
    W. Pietenpol: Phys. Rev. 82, 120 (1951)ADSCrossRefGoogle Scholar
  10. 5.10
    D.V. Lang: J. Appl. Phys. 45, 3023 (1974)ADSCrossRefGoogle Scholar
  11. D.V. Lang: In Thermally Stimulated Relaxation in Solids,ed. by P. Bräunlich, Topics Appl. Phys., Vol.37 (Springer, Berlin, Heidelberg 1979) Chap.3Google Scholar
  12. 5.11
    N.M. Johnson, D.J. Barteling, J.P. McVittie: J. Vac. Sci. Technol. 16, 1407 (1979)ADSCrossRefGoogle Scholar
  13. J. Frenkel: Tech. Phys. USSR 5, 685 (1938); Phys. Rev. 54, 647 (1938)CrossRefGoogle Scholar
  14. A.G. Milnes: Deep Impurities in Semiconductors ( Wiley-Interscience, New York 1973 ) p. 99Google Scholar
  15. J. Bourgoin, M. Lannoo: Point Defects in Semiconductors II, Springer Ser. Solid-State Sci., Vol. 35 ( Springer, Berlin, Heidelberg 1983 )Google Scholar
  16. J.L. Hartke: J. Appl. Phys. 39, 4871 (1968)ADSCrossRefGoogle Scholar
  17. W. Keller, K. Wünstel: Appl. Phys. A31, 9 (1983)Google Scholar
  18. 5.12
    J.B. Gunn: J. Electron. Control 4, 17 (1958)CrossRefGoogle Scholar
  19. 5.13
    J. Bardeen: Semiconductor Research Leading to the Point Contact Transistor; H. Brattain: Surface Properties of Semiconductors; W. Shockley: Transistor Technology Evokes New Physics, in Nobel Lectures “Physics” 1942–1962 (Elsevier, Amsterdam 1964) pp.318–341; 377–384; 344–374Google Scholar
  20. 5.14
    E. Braun, S. MacDonald: Revolution in Miniature (Cambridge Univ. Press, Cambridge 1978 )Google Scholar
  21. 5.15
    M.J. Morant: Introduction to Semiconductor Devices ( Addison-Wesley, Reading MA 1964 )Google Scholar
  22. 5.16
    E.H. Rhoderick: Metal-Semiconductor Contacts ( Clarendon, Oxford 1978 )Google Scholar
  23. 5.17
    K. Graff, H. Fischer: In Solar Energy Conversion, ed. by B.O. Seraphin, Topics Appl. Phys., Vol. 31 ( Springer, Berlin, Heidelberg, New York 1979 )Google Scholar
  24. 5.18
    J. Bardeen, W.H. Brattain: Phys. Rev. 74, 230 (1948)ADSCrossRefGoogle Scholar
  25. 5.19
    H.A. Gebbie, P.C. Banbury, C.A. Hogarth: Proc. Phys. Soc. London 63B, 371 (1950)ADSCrossRefGoogle Scholar
  26. 5.20
    F. Rosenberger: Fundamentals of Crystal Growth I, Springer Ser. Solid-State Sci., Vol. 5 ( Springer, Berlin, Heidelberg 1978 )Google Scholar
  27. 5.21
    M. Tanenbaum, D.G. Thomas: Bell Syst. Tech. J. 35, 1 (1956)Google Scholar
  28. 5.22
    J.A. Hoerni: IRE Electron Devices Meeting, Washington DC (1960)Google Scholar
  29. 5.23
    C.J. Frosch, L. Derrick: J. Electrochem. Soc. 104, 547 (1957)CrossRefGoogle Scholar
  30. 5.24
    L.F. Thompson, R.E. Kerwin: Annu. Rev. Mater. Sci. 6, 267 (1976)ADSCrossRefGoogle Scholar
  31. 5.
    R.A. Bartolini: In Holographic Recording Materials,ed. by H.M. Smith, Topics Appl. Phys., Vol.20 (Springer, Berlin, Heidelberg 1977) Chap.7Google Scholar
  32. 5.26
    D.F. Barbe (ed.): Very Large Scale Integration VLSI, 2nd ed., Springer Ser. Electrophys., Vol. 5 ( Springer, Berlin, Heidelberg 1981 )Google Scholar
  33. Y. Tarui (ed.): VLSI Technology, Springer Ser. Electrophys., Vol. 12 ( Springer, Berlin, Heidelberg 1986 )Google Scholar
  34. 5.
    E. Spiller, R. Feder. In X-Ray Optics,ed. by H.J. Queisser, Topics Appl. Phys., Vol.22 (Springer, Berlin, Heidelberg 1977) Chap.3Google Scholar
  35. 5.28
    G. Stengl, R. Kaitna, H. Löschner, P. Wolf, R. Sacher: J. Vac. Sci. Technol. 16, 1883 (1979)ADSCrossRefGoogle Scholar
  36. 5.29
    M. Schulz, G. Pensl (eds.): Insulating Films on Semiconductors, Springer Ser. Electrophys., Vol. 7 ( Springer, Berlin, Heidelberg 1981 )Google Scholar
  37. 5.30
    D.F. Barbe (ed.): Charge-Couples Devices, Topics Appl. Phys., Vol. 38 ( Springer, Berlin, Heidelberg 1980 )Google Scholar
  38. 5.31
    S.R. Hofstein, F.P. Heiman: Proc. IEEE 51, 1190 (1963)CrossRefGoogle Scholar
  39. 5.32
    M.M. Atalla, E. Tannenbaum, E.J. Scheibner: Bell Syst. Tech. J. 38, 749 (1959)Google Scholar
  40. 5.33
    O.G. Folbert IEEE J. SC-16, 51 (1981)Google Scholar
  41. 5.34
    J.R. Barker. In Physics of Nonlinear Transport in Semiconductors, ed. by D.K. Ferry, J.R. Barker, C. Jacoboni ( Plenum, New York 1980 )Google Scholar
  42. 5.35
    R.C. Eden, B.M. Welch, R. Zucca, S.I. Long: IEEE J: SC-14, 221 (1979)Google Scholar
  43. 5.36
    R.C. Eden: Proc. IEEE 70, 5 (1982)ADSCrossRefGoogle Scholar
  44. 5.37
    H. Dember. Phys. Z. 32, 554, 856 (1931); ibid. 33, 207 (1932)Google Scholar
  45. 5.38
    J. Frenkel: Nature 132, 312 (1933)ADSMATHCrossRefGoogle Scholar
  46. 5.39
    W. van Roosbroeck: J. Appl. Phys. 26, 380 (1955)ADSCrossRefGoogle Scholar
  47. 5.40
    O. Madelung: Halbleiter, in Handbuch der Physik, Vol.XX, Elektrische Lei- tungsphänomene II, ed. by S. Flügge (Springer, Berlin, Göttingen 1957 )Google Scholar
  48. 5.41
    W. van Roosbroeck: Phys. Rev. 101, 1713 (1956)ADSMATHCrossRefGoogle Scholar
  49. 5.42
    M.B. Prince: J. Appl. Phys. 26, 534 (1955)ADSCrossRefGoogle Scholar
  50. 5.43
    D.M. Chapin, C.S. Fuller, G.L. Pearson: J. Appl. Phys. 25, 676 (1954)ADSCrossRefGoogle Scholar
  51. 5.44
    B.O. Seraphin (ed.): Solar Energy Conversion, Topics Appl. Phys., Vol. 31 ( Springer, Berlin, Heidelberg 1979 )Google Scholar
  52. 5.45
    T.L. Chu, S.S. Chu, K.Y. Duh, H.I. Yoo: Proc. 12th IEEE Photovoltaic Specialists Conf. ( IEEE, New York 1976 ) p. 74Google Scholar
  53. 5.46
    J.K. Hirvonen (ed.): Treatise on Materials Science and Technology Vol. 18: Ion Implantation ( Academic, New York 1980 )Google Scholar
  54. 5.47
    C.W. White, P.S. Peercy (eds.): Laser and Electron Beam Processing of Materials ( Academic, New York, 1980 )Google Scholar
  55. 5.48
    D.E. Carlson, C.R. Wronski: In Amorphous Semiconductors, ed. by M.H. Brodsky, Topics Appl. Phys., Vol.36 (Springer, Berlin, Heidelberg, New York 1979) Chap.10; J. Electron. Mater. 6, 95 (1977)Google Scholar
  56. 5.49
    K.W. Böer. 2nd Photovoltaic Solar Energy Conf., ed. by R. Van Overstraeton, W. Palz ( Reidel, Dordrecht 1979 ) p. 671CrossRefGoogle Scholar
  57. 5.
    G.W. Cullen, C.C. Wang (eds.): Heteroepitaxial Semiconductors for Electron Devices (Springer, New York 1978) (review)Google Scholar
  58. 5.
    J. Javetski: Electronics (July 19, 1979) p.105 (review)Google Scholar
  59. 5.52
    F.A. Shirland, P. Rai-Choudhury: Rep. Prog. Phys. 41, 1839 (1978) 5.53 F.R. Kaihammer: Sci. Am. 241, 42 (1979)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Institut für FestkörperphysikUniversität WienWienAustria

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