Skip to main content
SpringerLink
Log in

Carrier Diffusion Processes

  • Chapter
Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

  • 363 Accesses

Abstract

The discussion of (4.10.8–C11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇ r n with the effect of a diffusion current j= – e D n ∇ r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. F. Stockmann: Halbleiterprobleme VI, 279 ( Vieweg, Braunschweig 1961 )

    Google Scholar 

  2. R.B. Adler, A.C. Smith, R.L. Longini: Introduction to Semiconductor Physics (Wiley, New York 1964)

    Google Scholar 

  3. J.P. McKelvey: In Problems in Solid State Physics, ed. by H. Goldsmid ( Academic, New York 1968 ) p. 82

    Google Scholar 

  4. J.R. Haynes, W. Shockley: Phys. Rev. 81 835 (1951)

    Google Scholar 

  5. W. Schottky: Z. Phys. 118, 539 (1942)

    Article  ADS  MATH  Google Scholar 

  6. W. Shockley: Bell Syst. Tech. J. 28 435 (1949)

    Google Scholar 

  7. C.T. Sah, R.N. Noyce, W. Shockley: Proc. IRE 45, 1228 (1957)

    Article  Google Scholar 

  8. S.M. Sze: Physics of Semiconductor Devices, 2nd ed. ( Wiley, New York 1981 ) p. 92

    Google Scholar 

  9. W. Pietenpol: Phys. Rev. 82, 120 (1951)

    Article  ADS  Google Scholar 

  10. D.V. Lang: J. Appl. Phys. 45, 3023 (1974)

    Article  ADS  Google Scholar 

  11. D.V. Lang: In Thermally Stimulated Relaxation in Solids,ed. by P. Bräunlich, Topics Appl. Phys., Vol.37 (Springer, Berlin, Heidelberg 1979) Chap.3

    Google Scholar 

  12. N.M. Johnson, D.J. Barteling, J.P. McVittie: J. Vac. Sci. Technol. 16, 1407 (1979)

    Article  ADS  Google Scholar 

  13. J. Frenkel: Tech. Phys. USSR 5, 685 (1938); Phys. Rev. 54, 647 (1938)

    Article  Google Scholar 

  14. A.G. Milnes: Deep Impurities in Semiconductors ( Wiley-Interscience, New York 1973 ) p. 99

    Google Scholar 

  15. J. Bourgoin, M. Lannoo: Point Defects in Semiconductors II, Springer Ser. Solid-State Sci., Vol. 35 ( Springer, Berlin, Heidelberg 1983 )

    Google Scholar 

  16. J.L. Hartke: J. Appl. Phys. 39, 4871 (1968)

    Article  ADS  Google Scholar 

  17. W. Keller, K. Wünstel: Appl. Phys. A31, 9 (1983)

    Google Scholar 

  18. J.B. Gunn: J. Electron. Control 4, 17 (1958)

    Article  Google Scholar 

  19. J. Bardeen: Semiconductor Research Leading to the Point Contact Transistor; H. Brattain: Surface Properties of Semiconductors; W. Shockley: Transistor Technology Evokes New Physics, in Nobel Lectures “Physics” 1942–1962 (Elsevier, Amsterdam 1964) pp.318–341; 377–384; 344–374

    Google Scholar 

  20. E. Braun, S. MacDonald: Revolution in Miniature (Cambridge Univ. Press, Cambridge 1978 )

    Google Scholar 

  21. M.J. Morant: Introduction to Semiconductor Devices ( Addison-Wesley, Reading MA 1964 )

    Google Scholar 

  22. E.H. Rhoderick: Metal-Semiconductor Contacts ( Clarendon, Oxford 1978 )

    Google Scholar 

  23. K. Graff, H. Fischer: In Solar Energy Conversion, ed. by B.O. Seraphin, Topics Appl. Phys., Vol. 31 ( Springer, Berlin, Heidelberg, New York 1979 )

    Google Scholar 

  24. J. Bardeen, W.H. Brattain: Phys. Rev. 74, 230 (1948)

    Article  ADS  Google Scholar 

  25. H.A. Gebbie, P.C. Banbury, C.A. Hogarth: Proc. Phys. Soc. London 63B, 371 (1950)

    Article  ADS  Google Scholar 

  26. F. Rosenberger: Fundamentals of Crystal Growth I, Springer Ser. Solid-State Sci., Vol. 5 ( Springer, Berlin, Heidelberg 1978 )

    Google Scholar 

  27. M. Tanenbaum, D.G. Thomas: Bell Syst. Tech. J. 35, 1 (1956)

    Google Scholar 

  28. J.A. Hoerni: IRE Electron Devices Meeting, Washington DC (1960)

    Google Scholar 

  29. C.J. Frosch, L. Derrick: J. Electrochem. Soc. 104, 547 (1957)

    Article  Google Scholar 

  30. L.F. Thompson, R.E. Kerwin: Annu. Rev. Mater. Sci. 6, 267 (1976)

    Article  ADS  Google Scholar 

  31. R.A. Bartolini: In Holographic Recording Materials,ed. by H.M. Smith, Topics Appl. Phys., Vol.20 (Springer, Berlin, Heidelberg 1977) Chap.7

    Google Scholar 

  32. D.F. Barbe (ed.): Very Large Scale Integration VLSI, 2nd ed., Springer Ser. Electrophys., Vol. 5 ( Springer, Berlin, Heidelberg 1981 )

    Google Scholar 

  33. Y. Tarui (ed.): VLSI Technology, Springer Ser. Electrophys., Vol. 12 ( Springer, Berlin, Heidelberg 1986 )

    Google Scholar 

  34. E. Spiller, R. Feder. In X-Ray Optics,ed. by H.J. Queisser, Topics Appl. Phys., Vol.22 (Springer, Berlin, Heidelberg 1977) Chap.3

    Google Scholar 

  35. G. Stengl, R. Kaitna, H. Löschner, P. Wolf, R. Sacher: J. Vac. Sci. Technol. 16, 1883 (1979)

    Article  ADS  Google Scholar 

  36. M. Schulz, G. Pensl (eds.): Insulating Films on Semiconductors, Springer Ser. Electrophys., Vol. 7 ( Springer, Berlin, Heidelberg 1981 )

    Google Scholar 

  37. D.F. Barbe (ed.): Charge-Couples Devices, Topics Appl. Phys., Vol. 38 ( Springer, Berlin, Heidelberg 1980 )

    Google Scholar 

  38. S.R. Hofstein, F.P. Heiman: Proc. IEEE 51, 1190 (1963)

    Article  Google Scholar 

  39. M.M. Atalla, E. Tannenbaum, E.J. Scheibner: Bell Syst. Tech. J. 38, 749 (1959)

    Google Scholar 

  40. O.G. Folbert IEEE J. SC-16, 51 (1981)

    Google Scholar 

  41. J.R. Barker. In Physics of Nonlinear Transport in Semiconductors, ed. by D.K. Ferry, J.R. Barker, C. Jacoboni ( Plenum, New York 1980 )

    Google Scholar 

  42. R.C. Eden, B.M. Welch, R. Zucca, S.I. Long: IEEE J: SC-14, 221 (1979)

    Google Scholar 

  43. R.C. Eden: Proc. IEEE 70, 5 (1982)

    Article  ADS  Google Scholar 

  44. H. Dember. Phys. Z. 32, 554, 856 (1931); ibid. 33, 207 (1932)

    Google Scholar 

  45. J. Frenkel: Nature 132, 312 (1933)

    Article  ADS  MATH  Google Scholar 

  46. W. van Roosbroeck: J. Appl. Phys. 26, 380 (1955)

    Article  ADS  Google Scholar 

  47. O. Madelung: Halbleiter, in Handbuch der Physik, Vol.XX, Elektrische Lei- tungsphänomene II, ed. by S. Flügge (Springer, Berlin, Göttingen 1957 )

    Google Scholar 

  48. W. van Roosbroeck: Phys. Rev. 101, 1713 (1956)

    Article  ADS  MATH  Google Scholar 

  49. M.B. Prince: J. Appl. Phys. 26, 534 (1955)

    Article  ADS  Google Scholar 

  50. D.M. Chapin, C.S. Fuller, G.L. Pearson: J. Appl. Phys. 25, 676 (1954)

    Article  ADS  Google Scholar 

  51. B.O. Seraphin (ed.): Solar Energy Conversion, Topics Appl. Phys., Vol. 31 ( Springer, Berlin, Heidelberg 1979 )

    Google Scholar 

  52. T.L. Chu, S.S. Chu, K.Y. Duh, H.I. Yoo: Proc. 12th IEEE Photovoltaic Specialists Conf. ( IEEE, New York 1976 ) p. 74

    Google Scholar 

  53. J.K. Hirvonen (ed.): Treatise on Materials Science and Technology Vol. 18: Ion Implantation ( Academic, New York 1980 )

    Google Scholar 

  54. C.W. White, P.S. Peercy (eds.): Laser and Electron Beam Processing of Materials ( Academic, New York, 1980 )

    Google Scholar 

  55. D.E. Carlson, C.R. Wronski: In Amorphous Semiconductors, ed. by M.H. Brodsky, Topics Appl. Phys., Vol.36 (Springer, Berlin, Heidelberg, New York 1979) Chap.10; J. Electron. Mater. 6, 95 (1977)

    Google Scholar 

  56. K.W. Böer. 2nd Photovoltaic Solar Energy Conf., ed. by R. Van Overstraeton, W. Palz ( Reidel, Dordrecht 1979 ) p. 671

    Book  Google Scholar 

  57. G.W. Cullen, C.C. Wang (eds.): Heteroepitaxial Semiconductors for Electron Devices (Springer, New York 1978) (review)

    Google Scholar 

  58. J. Javetski: Electronics (July 19, 1979) p.105 (review)

    Google Scholar 

  59. F.A. Shirland, P. Rai-Choudhury: Rep. Prog. Phys. 41, 1839 (1978) 5.53 F.R. Kaihammer: Sci. Am. 241, 42 (1979)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

Authors
  1. Professor Dr. Karlheinz Seeger
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Seeger, K. (1989). Carrier Diffusion Processes. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02576-5_5

Download citation

  • DOI: https://doi.org/10.1007/978-3-662-02576-5_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19410-1

  • Online ISBN: 978-3-662-02576-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation