Abstract
After a brief presentation of the various experimental techniques of band-offset determination in heterojunctions, we present our recent heuristic procedure for band-offset prediction. According to it, the valence-band-edge discontinuity in heterojunctions is given by the difference in the energy level positions of a transition metal deep impurity in the two com-pounds forming the heterojunction.
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Heinrich, H., Langer, J.M. (1986). Heuristic Approach to Band-Edge Discontinuities in Heterostructures. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_9
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DOI: https://doi.org/10.1007/978-3-662-02470-6_9
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