Heuristic Approach to Band-Edge Discontinuities in Heterostructures

  • H. Heinrich
  • J. M. Langer
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 67)


After a brief presentation of the various experimental techniques of band-offset determination in heterojunctions, we present our recent heuristic procedure for band-offset prediction. According to it, the valence-band-edge discontinuity in heterojunctions is given by the difference in the energy level positions of a transition metal deep impurity in the two com-pounds forming the heterojunction.


Barrier Height Quantum Well Transition Metal Impurity Chemical Trend Internal Photoemission 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • H. Heinrich
    • 1
  • J. M. Langer
    • 2
  1. 1.Institut fur ExperimentalphysikJohannes Kepler Universität LinzLinzAustria
  2. 2.Institute of PhysicsPolish Academy of SciencesWarsawPoland

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