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Electrical Measurements of Band Discontinuities at Heterostructure Interfaces

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Two-Dimensional Systems: Physics and New Devices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

Abstract

Experimental methods of measuring band discontinuities at heterostructure interfaces are discussed using the GaAs/AlxGa1-xAs system as an example. Electrical measurements of current-voltage and capacitance-voltage characteristics of single barrier systems are emphasized.

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Author information

Authors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    T. W. Hickmott

Authors
  1. T. W. Hickmott
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1986 Springer-Verlag Berlin Heidelberg

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Hickmott, T.W. (1986). Electrical Measurements of Band Discontinuities at Heterostructure Interfaces. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_8

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

  • eBook Packages: Springer Book Archive

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