Parallel-Transport Experiments in 2D Systems

  • R. A. Höpfel
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 67)


Transport experiments in two-dimensional (2D) carrier systems are reviewed, with emphasis on high-field transport relevant for modern device structures (Si-MOSFETs, GaAs-AlGaAs heterostructures and quantum wells). Three methods have been applied to investigate parallel transport in 2D systems: (l) current measurements with simultaneous Hall- or magnetoresistance measurements, (2) direct drift time (“time-of-flight”) measurements with picosecond opto-electronic techniques, (3) modeling of dynamical device performance. Hot carrier effects (optical-phonon emission, real-space and valley transfer) play a central role for the understanding of the velocity-field characteristics in these systems.


Drift Velocity Parallel Transport Space Charge Effect Negative Differential Conductivity Energy Loss Rate 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • R. A. Höpfel
    • 1
    • 2
  1. 1.AT&T Bell LaboratoriesHolmdelUSA
  2. 2.Institut für ExperimentalphysikUniversität InnsbruckAustria

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