Abstract
GaAs sawtooth doping superlattices consisting of a periodic sequence of n-and p-type ?-doped GaAs layers equally spaced by undoped regions were pre¬pared by molecular beam epitaxy. The sheet-charge distribution resulting from the doping profile described by a periodic train of 6-functions leads tc a strong sawtooth-shaped modulation of the real-space energy bands. The effective energy gap of the superlattice is smaller than that of GaAs, and for a superlattice period of less than 20 nm it is stable even at high ex¬citation densities. Stable high-intensity luminescence beyond 1 μm is thus observed also at room temperature. In addition, vertical carrier transport due to tunneling becomes important in short-period GaAs sawtooth doping superlatt ices.
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Schubert, E.F., Hauser, M., Ullrich, B., Ploog, K. (1986). Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_25
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DOI: https://doi.org/10.1007/978-3-662-02470-6_25
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