Abstract
GaAlAs/GaAs heterostructures have recently led to devices presenting high performances at microwave frequencies. The first microwave heterostructure device now commercially available is the two-dimensional electron gas field effect transistor (TEGFET, also referred to as HEMT or MODFET) presenting extremely low noise figures up to 40 GHz [1][2][3]. Multiple stage TEGFET amplifiers have already been realized to serve as input circuit in receivers for high frequencies communications. Most of them have been described at the last GaAs ICs Conference, at Monterey, CA, in November 85 [4].
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References
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© 1986 Springer-Verlag Berlin Heidelberg
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Chevrier, J., Delagebeaudeuf, D. (1986). Microwave Performances of GaAlAs/GaAs Heterostructure Devices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_24
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DOI: https://doi.org/10.1007/978-3-662-02470-6_24
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