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Metalorganic MBE — A New Technique for the Growth of III–V Semiconductor Layers

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Two-Dimensional Systems: Physics and New Devices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

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Abstract

A new method for the controlled growth of thin III-V semiconductor films is described. The technique called metalorganic MBE (MOMBE) combines advantages of MOCVD and MBE. As in MBE the process is performed in an UHV system; as sources molecular beams of hydrides like AsH3, PH3 and/or metalorganic alkyls like Ga(CH3)3 [TMG], Ga(C2H5)3 [TEG], In(C2H5)3 [TEIn], As(CH3)3 [TMAs] etc. are used. In the present review,different experimental approaches to MOMBE are briefly discussed. The main emphasis is on the epitaxial growth of GaAs from AsH3, TMG and TEG. The same approach is used to realize p- and n-type doping by carbon and silicon. The feasibility of the doping techniques is demonstrated by the growth of modulation-doped multilayer structures (nipi structures). Furthermore,results of selective growth studies are presented.

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Author information

Authors and Affiliations

  1. II. Physikalisches Institut, Rheinisch-Westfälischen Technischen Hochschule Aachen, D-5100, Aachen, Fed. Rep. of Germany

    H. Lüth

Authors
  1. H. Lüth
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1986 Springer-Verlag Berlin Heidelberg

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Lüth, H. (1986). Metalorganic MBE — A New Technique for the Growth of III–V Semiconductor Layers. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_2

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_2

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

  • eBook Packages: Springer Book Archive

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