Abstract
We consider a layer of dopant atoms embedded in a single atomic plane during epitaxial growth of a GaAs crystal. It is shown that the electronic states of this 6-layer are subbands of a V-shaped potential well. The subband levels are studied in magneto-transport and tunneling experiments. We discuss the case of a periodic sequence of layers, the role of valley-orbit effects, and central cell corrections.
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References
See for example, B. Vinter, Phys. Rev. B 26, 6808 (1982)
See for example, N.C. Jarosik, B.D. McComEe”, B.V. Shanabrook, R.J. Wagner, J. Comas, and G. Wicks, Proc. of the ICPS San Francisco (1984), Eds. J.P. Chadi and W.A. Harrison, Springer Verlag, New York 1985, p. 507 and cf. B.D. McCombe, review lecture in this volume
F. Crowne, T.L. Reinicke, and B.V. Shanabrook, Solid State Commun. 50, 875 (1984)
A. Zrenner, H. Reisinger, and F. Koch, Proc. of the ICPS San Francisco (1984), Eds. J.P. Chadi and W.A. Harrison, Springer Verlag, New York 1985, p. 325
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K. Ploog, A. Fischer, and E.F. Schubert, 2nd Int. Conf. on Modulated Semiconductor Structures, Kyoto (1985), Surface Sci. (in press) and cf. K. Ploog, lecture in this volume
G. Dbhler, cf. the lecture in this volume
A. Zrenner, H. Reisinger, F. Koch, K. Ploog, and J.C. Maan, to be published
M. Zachau, F. Koch, K. Ploog, P. Roentgen, and H. Beneking, to be published
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© 1986 Springer-Verlag Berlin Heidelberg
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Koch, F., Zrenner, A., Zachau, M. (1986). The δ(z) Doping Layer: Impurities in the 2-d World of Layered Systems. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_17
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