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The δ(z) Doping Layer: Impurities in the 2-d World of Layered Systems

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Two-Dimensional Systems: Physics and New Devices

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

Abstract

We consider a layer of dopant atoms embedded in a single atomic plane during epitaxial growth of a GaAs crystal. It is shown that the electronic states of this 6-layer are subbands of a V-shaped potential well. The subband levels are studied in magneto-transport and tunneling experiments. We discuss the case of a periodic sequence of layers, the role of valley-orbit effects, and central cell corrections.

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References

  1. See for example, B. Vinter, Phys. Rev. B 26, 6808 (1982)

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  4. A. Zrenner, H. Reisinger, and F. Koch, Proc. of the ICPS San Francisco (1984), Eds. J.P. Chadi and W.A. Harrison, Springer Verlag, New York 1985, p. 325

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  8. A. Zrenner, H. Reisinger, F. Koch, K. Ploog, and J.C. Maan, to be published

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  9. M. Zachau, F. Koch, K. Ploog, P. Roentgen, and H. Beneking, to be published

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© 1986 Springer-Verlag Berlin Heidelberg

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Koch, F., Zrenner, A., Zachau, M. (1986). The δ(z) Doping Layer: Impurities in the 2-d World of Layered Systems. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_17

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_17

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

  • eBook Packages: Springer Book Archive

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