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Far Infrared Studies of Shallow Donors in GaAs-AlGaAs Quantum Wells

  • B. D. McCombe
  • N. C. Jarosik
  • J.-M. Mercy
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 67)

Abstract

Calculations for GaAs-AlGaAs quantum wells show that impurity energies depend strongly on the quantum well (QW) width and/or the impurity position within the well. Recent experimental work in GaAs-AlGaAs MQW structures is reviewed with emphasis on FIR spectroscopic studies of donor impurities in magnetic fields up to 9.5T. Samples nominally doped in narrow regions at the center and the edge of GaAs wells have been studied for QW widths between 80A and 450A. Results are generally in very good agreement with recent calculations. Possible use of these measurements to determine the distribution of impurities is discussed.

Keywords

Quantum Well Line Profile Landau Level Donor Impurity Hydrogenic Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • B. D. McCombe
    • 1
  • N. C. Jarosik
    • 1
  • J.-M. Mercy
    • 1
  1. 1.Department of Physics and AstronomySUNY at BuffaloBuffaloUSA

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