Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures

  • S. Luryi
  • F. Capasso
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 67)


This paper will review two classes of semiconductor devices: (1) resonant-tunneling diodes and transistors, and (2) infrared detectors on a silicon chip. The only connection between these topics is that both classes of devices employ heterojunctions.


Alloy Layer Resonant Tunneling Negative Differential Resistance Infrared Photodetector Drain Contact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973);CrossRefGoogle Scholar
  2. 1a.
    L. L. Chang, L. Esaki and R. Tsu, Appl. Phys. Lett.. 24, 593 (1974).CrossRefGoogle Scholar
  3. 2.
    T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker and D. D. Peck, Appl. Phys. Lett. 43, 588, (1983).CrossRefGoogle Scholar
  4. 3.
    T. C. L. G. Sollner, P. E. Tannenwald, D. D. Peck, and W. D. Goodhue, Appl. Phys. Lett. 45, 1319, (1984).CrossRefGoogle Scholar
  5. 4.
    T. Shewchuk, P. C. Chapin, P. D. Coleman, W. Kopp, R. Fischer and H. Morkoc, Appl. Phys. Lett. 46, 508 (1985).CrossRefGoogle Scholar
  6. 5.
    M. Tsuchiya, H. Sakaki and J. Yashino, Jap. J. Appl. Phys. 24, L466 (1985).CrossRefGoogle Scholar
  7. 6.
    T. Tsuchiya and H. Sakaki, Tech. Digest of IEEE Int. Electron Dev. Meeting, Dec. 2–4, Washington, DC (1985), p. 662.Google Scholar
  8. 7.
    H. Morkoc, . J. Chen, U. K. Reddy, T. Henderson, P. D. Coleman, and S. Luryi, Appl. Phys. Lett., to be published.Google Scholar
  9. 8.
    B. Ricco and M. Ya. Azbel, Phys. Rev. B 29, 1970 (1984).CrossRefGoogle Scholar
  10. 9.
    F. Capasso and R. A. Kiehl, J. Appl. Phys. 58, 1366 (1985).CrossRefGoogle Scholar
  11. 10.
    S. Luryi, Appl. Phys. Lett. 47, 490 (1985).CrossRefGoogle Scholar
  12. 11.
    S. Luryi, Technical Digest of the IEEE Int. Electron Dev. Meeting, Dec. 2–4, Washington, DC (1985), p. 666.Google Scholar
  13. 12.
    G. E. Derkits, to be published.Google Scholar
  14. 13.
    E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, and H. Schichijo, Appl. Phys. Lett. 703 (1977).Google Scholar
  15. 14.
    R. A. Davies, M. J. Kelly, and T. M. Kerr, Phys. Rev. Lett. 55, 1114 (1985).CrossRefGoogle Scholar
  16. 15.
    R. F. Kazarinov and R. A. Suris, Sov. Phys. — Semicond. 5, 707 (1971).Google Scholar
  17. 16.
    L. Esaki and L. L. Chang, Phys. Rev. Lett. 33, 495 (1974).CrossRefGoogle Scholar
  18. 17.
    F. Capasso, K. Mohammed, and A. Y. Cho, Tech. Digest of IEEE Int. Electron Dev. Meeting, Dec. 2–4, Washington, DC (1985), p. 764; also Appl. Phys. Lett. 48, 478 (1986).Google Scholar
  19. 18.
    S. Luryi and F. Capasso, Appl. Phys. Lett. 47, 1347 (1985).CrossRefGoogle Scholar
  20. 19.
    T. R. Harrison, A. M. Johnson, P. K. Tien, and A. H. Dayem, Appl. Phys. Lett. 41, 734 (1982).CrossRefGoogle Scholar
  21. 20.
    S. Luryi, A. Kastalsky, and J. C. Bean, IEEE Trans. Electron Devices ED-31, 1135 (1984).CrossRefGoogle Scholar
  22. 21.
    A. Kastalsky, S. Luryi, J. C. Bean, and T. T. Sheng, in Proc. 1st Int. Symp. Silicon MBE, ed. by J. C. Bean, Electrochem. Soc. Press, 1985, p. 406.Google Scholar
  23. 22.
    See, for example, F. Capasso, Physics of avalanche photodiodes, in Semiconductors and semimetals, vol. 22, part D, pp. 1–172, 1985.Google Scholar
  24. 23.
    G. E. Stillman, L. W. Cook, G. E. Bulman, N. Tabatbaie, R. Chin, and P. D. Dapkus, IEEE Trans. Electron Devices ED-29, 1355 (1982).CrossRefGoogle Scholar
  25. 24.
    J. C. Campbell, A. G. Dentai, W. S. Holden, and B. L. Kasper, Electron Lett. 19, 818 (1983).CrossRefGoogle Scholar
  26. 25.
    F. Capasso, A. Kastalsky, and S. Luryi, 1983 (unpublished).Google Scholar
  27. 26.
    F. Capasso, A. Y. Cho, and P. W. Foy, Electron. Lett. 20, 635 (1984).CrossRefGoogle Scholar
  28. 27.
    S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron Device Lett. EDL-7, 104, (1986)CrossRefGoogle Scholar
  29. 28.
    H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, and S. Luryi, Appl. Phys. Lett., to be published.Google Scholar
  30. 29.
    T. P. Pearsall, H. Temkin, J. C. Bean, and S. Luryi, to be published.Google Scholar
  31. 30.
    R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).CrossRefGoogle Scholar
  32. 31.
    F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, Appl. Phys. Lett. 45, 1138(1984).CrossRefGoogle Scholar
  33. 32.
    R. Hull, J. C. Bean, F. Cerdeira, A. T. Fiory, and J. M. Gibson, Appl. Phys Lett. 48, 56 (1986).CrossRefGoogle Scholar
  34. 33.
    R. People, Phys. Rev. B32, 1405 (1985).CrossRefGoogle Scholar
  35. 34.
    D. V. Lang, R. People, J. C. Bean, and A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • S. Luryi
    • 1
  • F. Capasso
    • 1
  1. 1.AT & T Bell LaboratoriesMurray HillUSA

Personalised recommendations