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Two-Dimensional Systems: Physics and New Devices pp 140–153Cite as

Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 67))

Abstract

This paper will review two classes of semiconductor devices: (1) resonant-tunneling diodes and transistors, and (2) infrared detectors on a silicon chip. The only connection between these topics is that both classes of devices employ heterojunctions.

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Author information

Authors and Affiliations

  1. AT & T Bell Laboratories, Murray Hill, NJ, 07974, USA

    S. Luryi & F. Capasso

Authors
  1. S. Luryi
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  2. F. Capasso
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Editor information

Editors and Affiliations

  1. Institut für Physik, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700, Leoben, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1986 Springer-Verlag Berlin Heidelberg

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Luryi, S., Capasso, F. (1986). Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems: Physics and New Devices. Springer Series in Solid-State Sciences, vol 67. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02470-6_14

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  • DOI: https://doi.org/10.1007/978-3-662-02470-6_14

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02472-0

  • Online ISBN: 978-3-662-02470-6

  • eBook Packages: Springer Book Archive

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