New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures
New thin film epitaxial growth methods have been developed which provide the possibility of accurately controlling thicknesses and doping profiles. These methods can be applied to 2DEG structures having a modulation doped single heterojunction, and those having an asymmetric quantum well doped with an atomic layer profile.
KeywordsMolecular Beam Epitaxy GaAs Layer Flow Rate Region MOCVD Method Single Heterojunction
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