New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures

  • Y. Horikoshi
  • N. Kobayashi
  • H. Sugiura
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 67)


New thin film epitaxial growth methods have been developed which provide the possibility of accurately controlling thicknesses and doping profiles. These methods can be applied to 2DEG structures having a modulation doped single heterojunction, and those having an asymmetric quantum well doped with an atomic layer profile.


Molecular Beam Epitaxy GaAs Layer Flow Rate Region MOCVD Method Single Heterojunction 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • Y. Horikoshi
    • 1
  • N. Kobayashi
    • 1
  • H. Sugiura
    • 1
  1. 1.NTT Research LaboratoriesMusashino-shi, Tokyo 180Japan

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