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Carrier Diffusion Processes

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Book cover Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

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Abstract

The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇ r n with the effect of a diffusion current j = - eD n ∇ r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

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References

  1. F. Stöckmann: Halbleiterprobleme, Vol.VI, ed. by F. Sauter (Vieweg, Braunschweig 1961) p.279

    Google Scholar 

  2. R.B. Adler, A.C. Smith, R.L. Longini: Introduction to Semiconductor Physics (Wiley, New York 1964)

    Google Scholar 

  3. J.P. McKelvey: In Problems in Solid State Physics, ed. by H. Goldsmid (Academic, New York 1968) p.82

    Google Scholar 

  4. J.R. Haynes, W. Shockley: Phys. Rev. 81, 835 (1951)

    Article  ADS  Google Scholar 

  5. W. Schottky: Z. Phys. 118, 539 (1942)

    Article  ADS  MATH  Google Scholar 

  6. W. Shockley: Bell Syst. Tech. J. 28, 435 (1949)

    Google Scholar 

  7. C.T. Sah, R.N. Noyce, W. Shockley: Proc. IRE 45, 1228 (1957)

    Article  Google Scholar 

  8. S.M. Sze: Physics of Semiconductor Devices (Wiley, New York 1981) 2nd p.92

    Google Scholar 

  9. W. Pietenpol: Phys. Rev. 82, 120 (1951)

    Article  ADS  Google Scholar 

  10. D.Y. Lang: J. Appl. Phys. 45, 3023 (1974);

    Article  ADS  Google Scholar 

  11. D.V. Lang: In Thermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys. Vol. 37 (Springer Berlin, Heidelberg 1979) Chap.3

    Google Scholar 

  12. N.M. Johnson, D.J. Barteling, J.P. McVittie: J. Vac. Sci. Technol. 16, 1407 (1979)

    Article  ADS  Google Scholar 

  13. J. Frenkel: Tech. Phys. USSR 5, 685 (1938);

    MATH  Google Scholar 

  14. J. Frenkel: Phys. Rev. 54, 647 (1938)

    Article  ADS  Google Scholar 

  15. A.G. Miines: Deep Impurities in Semiconductors (Wiley-Interscience, New York 1973) p.99

    Google Scholar 

  16. J. Bourgoin, M. Lannoo: Point Defects in Semiconductors II, Springer Ser. Solid-State Sci. Vol. 35 (Springer, Berlin, Heidelberg 1983)

    Book  Google Scholar 

  17. J.L. Hartke: J. Appl. Phys. 39, 4871 (1968)

    Article  ADS  Google Scholar 

  18. W. Keller, K. Wünstel: Appl. Phys. A319 9 (1983)

    Google Scholar 

  19. J.B. Gunn: J. Electron. Control 4, 17 (1958)

    Article  Google Scholar 

  20. J. Bardeen: “Semiconductor Research Leading to the Point Contact Transistor”;

    Google Scholar 

  21. H. Brattain: “Surface Properties of Semiconductors”;

    Google Scholar 

  22. W. Shockley: “Transistor Technology Evokes New Physics” In: Nobel Lectures n Physics n 1942–1962 (Elsevier, Amsterdam 1964) pp.318–341; 377–384; 344–374

    Google Scholar 

  23. E. Braun, S. MacDonald: Revolution in Miniature (University Press, Cambridge 1978)

    Google Scholar 

  24. M.J. Morant: Introduction to Semiconductor Devices (Addison-Wesley, Reading, MA 1964)

    Google Scholar 

  25. E.H. Rhoderick: Metal-Semiconductor Contacts (Clarendon Press, Oxford 1978)

    Google Scholar 

  26. K. Graff, H. Fischer: In Solar Energy Conversion, ed, by B.O. Seraphin, Topics Appl. Phys., Vol.31 (Springer, Berlin, Heidelberg, New York 1979)

    Google Scholar 

  27. J. Bardeen, W.H. Brattain: Phys, Rev. 74, 230 (1948)

    Article  ADS  Google Scholar 

  28. H.A. Gebbie, P.C. Banbury, C.A. Hogarth: Proc. Phys. Soc. London 63B, 371 (1950)

    Article  ADS  Google Scholar 

  29. F. Rosenberger: Fundamentals of Crystal Growth I, Springer Ser. Solid-State Sci., Vol.5 (Springer, Berlin, Heidelberg, New York 1978)

    Google Scholar 

  30. M. Tanenbaum, D.G. Thomas: Bell Syst. Tech. J. 35, 1 (1956)

    Google Scholar 

  31. J.A. Hoerni: IRE Electron Devices Meeting, Washington, D.C (1960)

    Google Scholar 

  32. C.J. Frosch, L. Derrick: J. Electrochem. Soc. 104, 547 (1957)

    Article  Google Scholar 

  33. L.F. Thompson, R.E. Kerwin: Annu. Rev. Mater. Sci. 6, 267 (1976)

    Article  ADS  Google Scholar 

  34. R.A. Bartolini: In Holographic Recording Materials, ed. by H.M. Smith, Topics Appl. Phys., Vol.20 (Springer, Berlin, Heidelberg, New York 1977) Chap.7

    Google Scholar 

  35. D.F. Barbe (ed.): Very Large Scale Integration VLSI, Springer Ser. Electrophys., Vol.5, 2nd ed. (Springer, Berlin, Heidelberg, New York 1981)

    Google Scholar 

  36. E. Spiller, R. Feder: In X-Ray Optics, ed. by H.J. Queisser, Topics Appl. Phys., Vol.22 (Springer, Berlin, Heidelberg, New York 1977) Chap.3

    Google Scholar 

  37. G. Stengl, R. Kaitna, H. Löschner, P. Wolf, R. Sacher: J. Vac. Sci. Tech. 16, 1883 (1979)

    Article  ADS  Google Scholar 

  38. M. Schulz, G. Peusl (eds.): Insulating Films on Semiconductors, Springer Ser. Electrophys., Vol.7 (Springer, Berlin, Heidelberg, New York 1981)

    Google Scholar 

  39. D.F. Barbe (ed.): Charge-Coupled devices, Topics Appl. Phys., Vol.38 (Springer, Berlin, Heidelberg, New York 1980)

    Google Scholar 

  40. S.R. Hofstein, F.P. Heiman: Proc. IEEE 51, 1190 (1963)

    Article  Google Scholar 

  41. M.M. Atalla, E. Tannenbaum, E.J. Scheibner: Bell Syst. Tech. J. 38, 749 (1959)

    Google Scholar 

  42. O.G. Folbert: IEEE J. SC-16, 51 (1981)

    Google Scholar 

  43. J.R. Barker: In Physios of Nonlinear Transport in Semioonduotors, ed. by D.K. Ferry, J.R. Barker, C Jacoboni (Plenum, New York 1980)

    Google Scholar 

  44. R.C. Eden, B.M. Welch, R. Zucca, S.I. Long: IEEE J. SC-14, 221 (1979)

    Google Scholar 

  45. R.C. Eden: Proc. IEEE 70, 5 (1982)

    Article  ADS  Google Scholar 

  46. H. Dember: Phys. Z. 32, 554, 856 (1931);

    Google Scholar 

  47. H. Dember: Phys. Z. 33, 207 (1932)

    Google Scholar 

  48. J. Frenkel: Nature 132, 312 (1933)

    Article  ADS  MATH  Google Scholar 

  49. W. van Roosbroeck: J. Appl. Phys. 26, 380 (1955)

    Article  ADS  Google Scholar 

  50. O. Madelung: “Halbleiter”, in Handbuoh der Physik, Vol.XX, Elektrische Leitungsphà’nomene II, ed. by S. Flügge (Springer, Berlin, Göttingen, Heidelberg 1957)

    Google Scholar 

  51. W. van Roosbroeck: Phys. Rev. 101, 1713 (1956)

    Article  ADS  MATH  Google Scholar 

  52. M.B. Prince: J. Appl. Phys. 26, 534 (1955)

    Article  ADS  Google Scholar 

  53. D.M. Chapin, C.S. Fuller, G.L. Pearson: J. Appl. Phys. 25, 676 (1954)

    Article  ADS  Google Scholar 

  54. B.O. Seraphin (ed.): Solar Energy Conversion, Topics Appl. Phys., Vol.31 (Springer, Berlin, Heidelberg, New York 1979)

    Google Scholar 

  55. T.L. Chu, S.S. Chu, K.Y. Duh, H.I. Yoo: Proc. 12th IEEE Photovoltaic Specialists Conf., IEEE, New York (1976) p.74

    Google Scholar 

  56. J.K. Hirvonen (ed.): Treatise on Materials Soienoe and Technology Vol.18: Ion Implantation (Academic, New York 1980)

    Google Scholar 

  57. C.W. White, P.S. Peercy (eds.): Laser and Electron Beam Processing of Materials (Academic, New York 1980)

    Google Scholar 

  58. D.E. Carlson, C.R. Wronski: In Amorphous Semiconductors, ed. by M.H. Brodsky, Topics Appl. Phys., Vol.36 (Springer, Berlin, Heidelberg, New York 1979) Chap.10;

    Google Scholar 

  59. D.E. Carlson, C.R. Wronski J. Electron. Mater. 6, 95 (1977)

    Article  ADS  Google Scholar 

  60. K.W. Bber: 2nd Photovoltaic Solar Energy Conf., éd. by R. Van Over-straeten, W. Palz (Reidel, Dordrecht 1979) p.671

    Google Scholar 

  61. G.W. Cullen, C.C. Wang (eds.): Heteroepitaxial Semiconductors for Electronic devices (Springer, Berlin, Heidelberg, New York 1978) (review)

    Google Scholar 

  62. J. Javetski: Electronics (July 19, 1979) p.105 (review)

    Google Scholar 

  63. F.A. Shirland, P. Rai-Choudhury: Rep. Progr. Phys. 41, 1839 (1978)

    Article  ADS  Google Scholar 

  64. F.R. Kaihammer: Sci. Am. 241, 42 (1979)

    Google Scholar 

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1985 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1985). Carrier Diffusion Processes. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02445-4_5

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  • DOI: https://doi.org/10.1007/978-3-662-02445-4_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-15578-2

  • Online ISBN: 978-3-662-02445-4

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