Relationship Between Initial Physical-Technological Parameters and Final Electrical Parameters of Thyristors

  • M. Kubát


This chapter contains a summary of the properties of the four-layer pnpn structure using the information explained in the previous chapters. It shows the physical, technological, and design conditions for obtaining high reverse and breakover voltage, high load possibilities for forward current, good dynamic properties of turning off, and a high capability to resist dU D/dt and dI T/dt. It also covers the influence of temperature. Finally, this chapter gives the basic relations between the resulting (electrical) parameters of thyristors on the one hand and the underlying physical and design parameters of thyristors on the other hand.


Breakdown Voltage Minority Carrier Depletion Region Final Parameter Auger Recombination 
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Copyright information

© Prof. Ing. Milan Kubát, Dr. Sc. 1984

Authors and Affiliations

  • M. Kubát
    • 1
  1. 1.Department of MicroelectronicsTechnical University of PraguePrague 6Czechoslovakia

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