Abstract
The percolation method described in Sect. 5.6 is employed in this chapter to calculate the exponential factor for hopping resistivity ρ 3. The case of isotropic impurity-state wave functions is considered in Sect. 6.1. The obtained theoretical dependence of ρ 3 on the impurity concentration is compared with a large number of experimental data for different semiconductors. On the whole, a good agreement is found. In Sect. 6.2 the theory is applied to semiconductors with anisotropic impurity wave functions, of which a typical example is n-Ge. The effect of strain on hopping conduction is analyzed. The anisotropy of hopping conductivity is calculated for the case of large strain in n-and p-Ge, where the wave functions of impurities are associated with a single ellipsoid in the electron spectrum.
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Shklovskii, B.I., Efros, A.L. (1984). Dependence of Hopping Conduction on the Impurity Concentration and Strain in the Crystal. In: Electronic Properties of Doped Semiconductors. Springer Series in Solid-State Sciences, vol 45. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02403-4_6
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DOI: https://doi.org/10.1007/978-3-662-02403-4_6
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