The Structure of Isolated Impurity States

  • Boris I. Shklovskii
  • Alex L. Efros
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 45)


This chapter is a brief introduction to the theory of impurity centers in semiconductors. The reader interested in more detail is recommended a review by Kohn [1.1], the more recent one by Bassani et al. [1.2], and the book by Bir and Pikus [1.3].


Phosphorus Anisotropy Arsenic GaAs Gallium 


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    W. Kohn: Shallow impurity states in silicon and germanium. Solid. St. Phys., Vol. 5, N.Y. (1957)Google Scholar
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    F. Bassani, G. Iadonisi, B. Preziosi: Electronic impurity levels in semiconductors. Rep. Prog. Phys. 37, 1099 (1974)ADSCrossRefGoogle Scholar
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    G. L. Bir, G. E. Pikus: Symmetry and Deformation Effects in Semiconductors ( Nauka, Moscow 1972 )Google Scholar
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    B. L. Gel’mont, M. I. D’yakonov: Acceptor levels in diamond-type semiconductors. Fiz. Tekh. Poluprov. 5, 2191 (1971) [English transl.: Sov. Phys.—Semicond. 5, 1905 (1971)1Google Scholar
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    A. Baldereschi, N. O. Lipari: Spherical model of shallow acceptor states in semiconductors. Phys. Rev. B8, 2697 (1973)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Boris I. Shklovskii
    • 1
  • Alex L. Efros
    • 1
  1. 1.A.F. IOFFE Physico-Technical InstituteAcademy of Sciences of the USSRLeningradUSSR

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