Abstract
The valence bands of germanium, silicon and the III—V compounds have an extremum at k = 0 and are degenerate there. The constant-energy surfaces for this case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28 a-2.28 c) . In the zincblende lattice typical for III—V compounds, there is no center of inversion, in contrast to the diamond lattice.
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Seeger, K. (1982). Carrier Transport in the Warped-Sphere Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02351-8_8
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