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Charge Transport and Scattering Processes in the Many-Valley Model

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Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

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Abstract

In Sect. 2.4, Figs. 2.26, 27, we saw that the conduction bands of silicon and germanium have constant energy surfaces near the band edge which are either 8 half-ellipsoids of 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the many-valley model of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction. In the present chapter we will calculate some important galvanomagnetic effects in the many-valley model of energy bands, deal with intervalley transitions, and finally arrive at the high-field domain and the acoustoelectric instabilities; the latter are also considered for piezoelectric coupling in a one-valley model since the calculation is similar to that for intervalley coupling in nonpolar many-valley semiconductors.

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1982 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1982). Charge Transport and Scattering Processes in the Many-Valley Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02351-8_7

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  • DOI: https://doi.org/10.1007/978-3-662-02351-8_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02353-2

  • Online ISBN: 978-3-662-02351-8

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