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Scattering Processes in a Spherical One-Valley Model

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Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

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Abstract

In Chap. 4 we frequently assumed an energy dependence of the momentum relaxation time τ m α εr, where r is a constant, for the calculation of the galvanomagnetic, thermoelectric, thermomagnetic, etc., effects. We will now treat the important scattering mechanisms and find the energy dependence of τ m . For those cases where a power law is found, the magnitude of the exponent r will be determined.

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  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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Seeger, K. (1982). Scattering Processes in a Spherical One-Valley Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02351-8_6

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