Carrier Diffusion Processes

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)

Abstract

The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇r n with the effect of a diffusion current j = — e D n r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.

Keywords

Quartz Phosphorus Sulfide Lithium Cadmium 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Institut für FestkörperphysikUniversität WienWienAustria

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