Carrier Diffusion Processes

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)


The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇r n with the effect of a diffusion current j = — e D n r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.


Carrier Density Diffusion Length Minority Carrier Electron Hole Pair Einstein Relation 
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  1. 5.1
    F. Stöckmann: Halbleiterprobleme, Vol.VI, ed. by F. Sauter (Vieweg, Braunschweig 1961) p.279Google Scholar
  2. 5.2
    R.B. Adler, A.C. Smith, R.L. Longini: Introduction to Semiconductor Physics (Wiley, New York 1964)Google Scholar
  3. 5.3
    J.P. McKelvey: In Problems in Solid State Physics, ed. by H. Goldsmid (Academic, New York 1968) p.82Google Scholar
  4. 5.4
    J.R. Haynes, W. Shockley: Phys. Rev. 81, 835 (1951)CrossRefGoogle Scholar
  5. 5.5
    W. Schottky: Z. Phys. 118, 539 (1942)MATHCrossRefGoogle Scholar
  6. 5.6
    W. Shockley: Bell Syst. Tech. J. 28, 435 (1949)Google Scholar
  7. 5.7
    C.T. Sah, R.N. Noyce, W. Shockley: Proc. IRE 45, 1228 (1957)CrossRefGoogle Scholar
  8. 5.8
    S.M. Sze: Physics of Semiconductor Devices (Wiley, New York 1981) 2nd p.92Google Scholar
  9. 5.9
    W. Pietenpol: Phys. Rev. 82, 120 (1951)CrossRefGoogle Scholar
  10. 5.10
    D.V. Lang: J. Appl. Phys. 45, 3023 (1974)CrossRefGoogle Scholar
  11. 5.11
    N.M. Johnson, D.J. Barteling, J.P. McVittie: J. Vac. Sci. Technol. 16, 1407 (1979)CrossRefGoogle Scholar
  12. 5.12
    J.B. Gunn: J. Electron. Control 4, 17 (1958)CrossRefGoogle Scholar
  13. 5.13
    J. Bardeen: “Semiconductor Research Leading to the Point Contact Transistor”; H. Brattain: “Surface Properties of Semiconductors”; W. Shockley: “Transistor Technology Evokes New Physics” In: Nobel Lectures “Physics” 1942–1962 (Elsevier, Amsterdam 1964) pp.318–341; 377–384; 344–374Google Scholar
  14. 5.14
    E. Braun, S. MacDonald: Revolution in Miniature (University Press, Cambridge 1978)Google Scholar
  15. 5.15
    M.J. Morant: Introduction to Semiconductor Devices (Addison-Wesley, Reading, MA 1964)Google Scholar
  16. 5.16
    V.L. Rideout: Thin Solid Films 48, 261 (1978) (review)CrossRefGoogle Scholar
  17. 5.17
    K. Graff, H. Fischer: In Solar Energy Conversion, ed. by B.O. Seraphin, Topics Appl. Phys., Vol.31 (Springer, Berlin, Heidelberg, New York 1979)Google Scholar
  18. 5.18
    J. Bardeen, W.H. Brattain: Phys. Rev. 74, 230 (1948)CrossRefGoogle Scholar
  19. 5.19
    H.A. Gebbie, P.C. Banbury, C.A. Hogarth: Proc. Phys. Soc. London 63B, 371 (1950)CrossRefGoogle Scholar
  20. 5.20
    F. Rosenberger: Fundamentals of Crystal Growth I, Springer Ser. Solid-State Sci., Vol.5 (Springer, Berlin, Heidelberg, New York 1978)Google Scholar
  21. 5.21
    M. Tanenbaum, D.G. Thomas: Bell Syst. Tech. J. 35, 1 (1956)Google Scholar
  22. 5.22
    J.A. Hoerni: IRE Electron Devices Meeting, Washington, D.C. (1960)Google Scholar
  23. 5.23
    C.J. Frosch, L. Derrick: J. Electrochem. Soc. 104, 547 (1957)CrossRefGoogle Scholar
  24. 5.24
    L.F. Thompson, R.E. Kerwin: Annu. Rev. Mater. Sci. 6, 267 (1976)CrossRefGoogle Scholar
  25. 5.25
    R.A. Bartolini: In Holographic Recording Materials, ed. by H.M. Smith, Topics Appl. Phys., Vol.20 (Springer, Berlin, Heidelberg, New York 1977) Chap.7Google Scholar
  26. 5.26
    D.F. Barbe (ed.): Very Large Scale Integration VLSI, Springer Ser. Electrophys., Vol.5, 2nd ed. (Springer, Berlin, Heidelberg, New York 1981)Google Scholar
  27. 5.27
    E. Spiller, R. Feder: In X-Ray Optics, ed. by H.J. Queisser, Topics Appl. Phys., Vol.22 (Springer, Berlin, Heidelberg, New York 1977) Chap.3Google Scholar
  28. 5.28
    G. Stengl, R. Kaitna, H. Löschner, P. Wolf, R. Sacher: J. Vac. Sci. Tech. 16, 1883 (1979)CrossRefGoogle Scholar
  29. 5.29
    M. Schulz, G. Peusl (eds.): Insulating Films on Semiconductors, Springer Ser. Electrophys., Vol . 7 (Springer, Berlin, Heidelberg, New York 1981)Google Scholar
  30. 5.30
    D.F. Barbe (ed.): Charge-Coupled Devices, Topics Appl. Phys., Vol.38 (Springer, Berlin, Heidelberg, New York 1980)Google Scholar
  31. 5.31
    S.R. Hofstein, F.P. Heiman: Proc. IEEE 51, 1190 (1963)CrossRefGoogle Scholar
  32. 5.32
    M.M. Atalla, E. Tannenbaum, E.J. Scheibner: Bell Syst. Tech. J. 38, 749 (1959)Google Scholar
  33. 5.33
    O.G. Folbert: IEEE J. SC-16, 51 (1981)Google Scholar
  34. 5.34
    J.R. Barker: In Physics of Nonlinear Transport in Semiconductors, ed. by D.K. Ferry, J.R. Barker, C. Jacoboni (Plenum, New York 1980)Google Scholar
  35. 5.35
    R.C. Eden, B.M. Welch, R. Zucca, S.I. Long: IEEE J. SC-14, 221 (1979)Google Scholar
  36. 5.36
    R.C. Eden: Proc. IEEE 70, 5 (1982)CrossRefGoogle Scholar
  37. 5.37
    H. Dember: Phys. Z. 32, 554, 856 (1931); 33, 207 (1932)Google Scholar
  38. 5.38
    J. Frenkel: Nature 132, 312 (1933)MATHCrossRefGoogle Scholar
  39. 5.39
    W. van Roosbroeck: J. Appl. Phys. 26, 380 (1955)CrossRefGoogle Scholar
  40. 5.40
    O. Madelung: “Halbleiter”, in Handbuch der Physik, Vol.XX, Elektrische Leitungsphänomene II, ed. by S. Flügge (Springer, Berlin, Göttingen, Heidelberg 1957)Google Scholar
  41. 5.41
    W. van Roosbroeck: Phys. Rev. 101, 1713 (1956)MATHCrossRefGoogle Scholar
  42. 5.42
    M.B. Prince: J. Appl. Phys. 26, 534 (1955)CrossRefGoogle Scholar
  43. 5.43
    D.M. Chapin, C.S. Fuller, G.L. Pearson: J. Appl. Phys. 25, 676 (1954)CrossRefGoogle Scholar
  44. 5.44
    B.O. Seraphin (ed.): Solar Energy Conversion, Topics Appl. Phys., Vol.31 (Springer, Berlin, Heidelberg, New York 1979)Google Scholar
  45. 5.45
    T.L. Chu, S.S. Chu, K.Y. Duh, H.I. Yoo: Proc. 12th IEEE Photovoltaic Specialists Conf., IEEE, New York (1976) p.74Google Scholar
  46. 5.46
    J.K. Hirvonen (ed.): Treatise on Materials Science and Technology Vol.18: Ion Implantation (Academic, New York 1980)Google Scholar
  47. 5.47
    C.W. White, P.S. Peercy (eds.): Laser and Electron Beam Processing of Materials (Academic, New York 1980)Google Scholar
  48. 5.48
    D.E. Carlson, C.R. Wronski: In Amorphous Semiconductors, ed. by M.H. Brodsky, Topics Appl. Phys., Vol.36 (Springer, Berlin, Heidelberg, New York 1979) Chap.10; J. Electron. Mater. 6, 95 (1977)Google Scholar
  49. 5.49
    K.W. Böer: 2nd Photovoltaic Solar Energy Conf., ed. by R. Van Over-straeten, W. Palz (Reidel, Dordrecht 1979) p.671CrossRefGoogle Scholar
  50. 5.50
    G.W. Cullen, C.C. Wang (eds.): Heteroepitaxial Semiconductors for Elec- tronic Devices (Springer, Berlin, Heidelberg, New York 1978) (review)Google Scholar
  51. 5.51
    J. Javetski: Electronics (July 19, 1979) p.105 (review)Google Scholar
  52. 5.52
    F.A. Shirland, P. Rai-Choudhury: Rep. Progr. Phys. 41, 1839 (1978)CrossRefGoogle Scholar
  53. 5.53
    F.R. Kalhammer: Sci. Am. 241, 42 (1979)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Institut für FestkörperphysikUniversität WienWienAustria

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