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Impact Ionization and Avalanche Breakdown

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)

Abstract

Some aspects of impact ionization and avalanche breakdown in semiconductors are similar to the corresponding phenomena in gaseous discharges. Semiconductors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n junctions at room temperature. We will discuss these cases separately.

Keywords

Drift Velocity Impact Ionization Depletion Region Breakdown Field Auger Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Institut für FestkörperphysikUniversität WienWienAustria

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