Microscale study of anodization process

Abstract

In order to apply the process of silicon anodization for structuring and develop a model, it was necessary to investigate the process on the microscale and check whether our data match the results from other researchers. In this chapter, dependence of microscale parameters of the anodization process (porosity, dissolution valence, etch rate, and interfacial surface quality) on current density and wafer resistivity for p-type silicon wafers was studied. Additionally, surface quality for p-type silicon samples anodized in low concentrated electrolytes, as well as influence of porous silicon removal process on surface quality, were investigated.