Abstract
Diamond is an indirect gap semiconductor, the lowest minima of the conduction band being located along the Δ-axes. The valence band has the structure common to all group IV semiconductors: three at Г degenerate bands (spin neglected, symmetry Г25). The spin orbit splitting of these bands is neglegible.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References for 1.1
Redfield, A.G.: Phys. Rev. 94 (1954) 526.
Skinner, B.J.: Am. Mineral. 42 (1957) 39.
Kaiser, W., Bond, W.L.: Phys. Rev. 115 (1959) 857.
Bundy, F.P.: Science 137 (1962) 1055.
Philipp, H.R., Taft, E.A.: Phys. Rev. 127 (1962) 159.
Rauch, C.J.: Proc. Int. Conf. Phys. Semicond., Exeter 1962 (A.C. Strickland ed.), The Inst, of Phys. and the Phys. Soc., London, p. 276.
Bundy, F.P.: J. Chem. Phys. 38 (1963) 631.
Clark, C.D., Dean, P.J., Harris, P.V.: Proc. Roy. Soc. London A277 (1964) 312.
Dean, P.J., Lightowlers, E.C., Wright, D.R.: Phys. Rev. A140 (1965) 352.
Denham, P., Lightowlers, E.C., Dean, P.J.: Phys. Rev. 161 (1967) 762.
Konorova, E.A., Shevchenko, S.A.: Sov. Phys. Semicond. (English Transi.) 1 (1967) 299;
Konorova, E.A., Shevchenko, S.A.: Fiz. Tekh. Poluprovodn. 1 (1967) 364.
Warren, J.L., Yarnell, J.L., Dolling, G., Cowley, R.A.: Phys. Rev. 158 (1967) 805.
Solin, S.A., Ramdas, A.K.: Phys. Rev. B1 (1970) 1687.
Collins, A.T.: Ind. Diamond Rev. 34 (1974) 131.
Grimsditch, M.H., Ramdas, A.K.: Phys. Rev. B11 (1975) 3139.
Slack, G.A., Bartram, S.F.: J. Appl. Phys. 46 (1975) 89.
Vermeulen, L.A., Farrer, R.G.: Diamond Research 1975 (Suppl. to Ind. Diamond Rev.) 18.
Berman, R., Martinez, M.: Diamond Research 1976 (Suppl. Ind. Diamond. Rev.) 7.
Fontanella, J., Johnston, R.L., Colwell, J.H., Andeen, C.: Appl. Opt. 16 (1977) 2949.
Massarani, B., Bourgoin, J.C., Chrenko, R.M.: Phys. Rev. B17 (1978) 1764.
Field, J.E. (ed.): The Properties of Diamond, Academic Press, London, New York, San Francisco 1979.
Himpsel, F.J., Knapp, J.A., van Vechten, J.A., Eastman, D.E.: Phys. Rev. B20 (1979) 624.
Bourgoin, J.C., Krynicki, J., Blanchard, B.: Phys. Status Solidi (a)52 (1979) 293.
Collins, A.T., Lightowlers, E.C.: The Properties of Diamond, Field, J.E. (ed.), London, New York, San Francisco: Academic Press 1979, p. 79.
Vavilov, V.S., Konorova, E.A., Stepanova, E.B., Trukhan, E.M.: Sov. Phys.-Semicond. 13 (1979) 635.
Himpsel, F.J., van der Veen, J.F., Eastman, D.E.: Phys. Rev. B22 (1980) 1967.
Nava, F., Canali, C., Jacoboni, C., Reggiani, L.: Solid State Commun. 33 (1980) 475.
Reggiani, L., Bosi, S., Canali, C., Nava, F.: Phys. Rev. B23 (1981) 3050.
Armon, H., Sellschop, J.P.F.: Phys. Rev. B26 (1982) 3289.
Reggiani, L., Waechter, D., Zukotynski, S.: Phys. Rev. B28 (1983) 3550.
Chelikowsky, J.R., Louie, S.G.: Phys. Rev. B29 (1984) 3470.
Wentorf, R.H.: J. Chem. Phys. 26 (1957) 956.
Philipp, H.R., Taft, E.A.: Phys. Rev. 127 (1982) 159.
Steigmeier, E.F.: Appl. Phys. Lett. 3 (1963) 6.
Janaf Thermochemical Tables, US Dept. of Commerce NBS PB 16384 (1965).
Geick, R., Perry, C.H., Rupprecht, G.: Phys. Rev. 146 (1966) 543.
Lynch, R.W., Drickamer, H.G.: J. Chem. Phys. 44 (1966) 181.
Gielisse, P.J., Mitra, S.S., Plendl, J.N., Griffis, R.D., Mansur, L.C., Marshall, R., Pascoe, E.A.: Phys. Rev. 155(1967) 1039.
Chrenko, R.M.: Solid State Commun. 14 (1974) 511.
Soma, T., Sawaoka, S., Saito, S.: Mater. Res. Bull. 9 (1974) 755.
Halperin, A., Katzir, A.: J. Phys. Chem. Solids 36 (1975) 89.
Bam, I.S., Davidenko, V.M., Sidorov, V.G., Fel’dgun, L.I., Skagalov, M.D., Shalabutov, Y.K.: Sov. Phys. Semicond. (English Transl.) 10 (1976) 331;
Bam, I.S., Davidenko, V.M., Sidorov, V.G., Fel’dgun, L.I., Skagalov, M.D., Shalabutov, Y.K.: Fiz. Tekh. Poluprov. 10 (1976) 554.
Mamy, R., Thomas, J., Jezequel, G., Lemonnier, J.C.: J. Phys. (Paris) Lett. 42 (1981) L-473.
Takahashi, T., Itoh, H., Kuroda, M.: J. Cryst. Growth 53 (1981) 418.
Carpenter, L.G., Kirby, P.J.: J. Phys. D15 (1982) 1143.
Ishii, T., Sato, T.: J. Cryst. Growth 61 (1983) 689.
Sanjurjo, J.A., López-Cruz, E., Vogl, P., Cardona, M.: Phys. Rev. B28 (1983) 4579.
Sokolovskii, T.D.: Phys. Status Solidi (b) 118 (1983) 493.
Hoffmann, D.M., Doll, G.L., Eklund, P.C.: Phys. Rev. B30 (1984) 6051.
Prasad, C., Dubey, J.D.: Phys. Status Solidi (b) 125 (1984) 625.
Robertson, J.: Phys. Rev. B29 (1984) 2131.
Catellani, A., Posternak, M., Baldereschi, A., Jansen, H.J.F., Freeman, A.J.: Phys. Rev. B32 (1985) 6997.
Huang, M., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
Reference for 1.2
McSkimin, H.J.: J. Appl. Phys. 24 (1963) 988.
Morin, F.J., Maita, J.P.: Phys. Rev. 96 (1954) 28.
Ludwig, G.W., Watters, R.L.: Phys. Rev. 101 (1956) 1699.
Carlson, R.O.: Phys. Rev. 108 (1957) 1390.
Philipp, H.R., Taft, E.A.: Phys. Rev. 120 (1960) 37.
Hall, R.O.A.: Acta Crystallogr. 14 (1961) 1004.
Dolling, G.: in “Inelastic Scattering of Neutrons in Solids and Liquids”, IAEA, Vienna 1963, Vol. II, p. 37.
Hennis, J.: J. Res. Nat. Bur. Stand. 68A (1964) 529.
McSkimin, H.J., Andreatch jr., P.: J. Appl. Phys. 35 (1964) 2161.
Balslev, L., Lawaetz, P.: Phys. Lett. 19 (1965) 6.
Hensel, J.C., Hasegawa, H., Nakayama, M.: Phys. Rev. 138 (1965) A225.
Weltzin, R.D., Swalin, R.A., Hutchinson, T.E.: Acta Metall. 13 (1965) 115.
Waldner, M., Hiller, M.A., Spitzer, W.G.: Phys. Rev. A140 (1965) 172.
Kodera, H.: J. Phys. Soc. Jpn. 21 Suppl. (1966) 578.
Barber, H.D.: Solid State Electron. 10 (1967) 1039.
Fulkerson, W., Moore, J.P., Williams, R.K., Graves, R.S., McElroy, D.L.: Phys. Rev. 167 (1968) 765.
Ichimiya, T., Furuichi, T.: Int. J. Appl. Radiat. Isot. 19 (1968) 573.
Wolf, H.F.: Semiconductors, New York: Wiley-Interscience 1971.
Aspnes, D.E., Studna, A.A.: Solid State Commun. 11 (1972) 1375.
Ho, L.T., Ramdas, A.K.: Phys. Rev. B5 (1972) 462.
Nilsson, G., Nelin, G.: Phys. Rev. B6 (1972) 3777.
Zorin, E.I., Pavlov, P.V., Tetelbaum, D.I., Khokhlov, A.F.: Fiz. Tekh. Poluprovodn. 6 (1972) 28.
Hultgren, R., Desai, P.D., Hawkins, D. T., Gleiser, M., Kelly, K.K., Wagman, D.D.: The Thermodynamic Properties of the Elements, American Society for Metals, Metals Park, Ohio 1973.
Yatsurugi, Y., Akiyama, N., Endo, Y., Nozaki, T.: J. Electrochem. Soc. 120 (1973) 975.
Yin, W.M., Paff, R.J.: J. Appl. Phys. 45 (1973) 1456.
Akasaka, Y., Horie, K., Nakamura, G.: Jpn. J. Appl. Phys. 13 (1974) 1533.
Bludau, W., Onton, A., Heinke, W.: J. Appl. Phys. 45 (1974) 1846.
Foreman, R.A., Aspnes, D.E.: Solid State Commun. 14 (1974) 100.
Lisiak, K.P., Milnes, A.G.: Solid State Electron. 18 (1975) 533.
Nishino, T., Takeda, M., Hamakawa, Y.: Solid State Commun. 14 (1974) 627.
Belikova, M.N., Zastavnyi, A.V., Korol, V.M.: Fiz. Tekh. Poluprovodn. 10 (1976) 535.
Hensel, J.C.: unpublished.
Ousset, J.C., Leotin, J., Askenasy, S., Skolnick, M.S., Stradling, R.A.: J. Phys. C9 (1976) 2802.
Pavlov, P.V., Zorin, E.I., Tetelbaum, D.I., Khokhlov, A.F.: Phys. Status Solidi (a) 35 (1976) 11.
Busta, H.H., Waggener, H.A.: J. Electrochem. Soc. 124 (1977) 1424.
Fair, R.B.: Semiconductor Silicon 1977, Huff, H.R., Sirtl, E. (eds.), The Electrochem Soc. 1977 p. 968.
Fair, R.B., Tsai, J.C.C.: J. Electrochem. Soc. 124 (1977) 1107.
Jacoboni, C., Canali, C., Ottaviani, G., Alberigi Quaranta, A.: Solid State Electron. 20 (1977) 77.
Kimerling, L.C.: Radiation Effects in Semiconductors 1976, in: Inst. Phys. Conf. Ser. 31 (1977) 221.
Lyon, K.G., Salinger, G.L., Swenson, C.A., White, G.K.: J. Appl. Phys. 48 (1977) 865.
Lipari, N.O., Altarelli, M.: Phys. Rev. B15 (1977) 4883.
Weber, W.: Phys. Rev. B15 (1977) 4793.
Wasserrab, Th.: Z. Naturforsch. 32a (1977) 746.
Daunois, A., Aspnes, D.E.: Phys. Rev. B18 (1978) 1824.
So, L., Whiteley, J.S., Ghandi, S.K., Baliga, B.J.: Solid State Electron. 21 (1978) 887.
Vydianath, H.R., Lorenzo, J.S., Kröger, F.A.: J. Appl. Phys. 49 (1978) 5928.
Troxel, J.R., Chatterjee, A.P., Watkins, G.D.: Phys. Rev. B19 (1979) 5336.
Troxel, J.R.: Ph.D. Thesis, Lehigh University, U.S.A. 1979.
Edwards, D.F., Ochoa, E.: Appl. Opt. 19 (1980) 4130.
Schmid, W.: Phys. Rev. Lett. 45 (1980) 1726.
Dyunaidov, S.S., Urmanov, N.A., Gafurova, M.V.: Phys. Status Solidi (a) 66 (1981) K79.
Keller, W.: Diplomarbeit Univ. Erlangen 1981.
Kunio, T., Nishino, T., Ohta, E., Sakata, M.: Solid State Electron. 24 (1981) 1087.
Lampert, M.O., Koebel, J.M., Siffert, P.: J. Appl. Phys. 52 (1981) 4975.
Philip, J., Breazeale, M.A.: J. Appl. Phys. 52 (1981) 3383.
Szablak, B., Altarelli, M.: Solid State Commun. 37 (1981) 341.
Becker, P., Seyfried, P., Siegert, H.: Z. Physik B48 (1982) 17.
Budzak, Ya.S., Mavrin, O.I.: Phys. Status Solidi (a) 69 (1982) K61.
Grimmeiss, H.G., Janzén, E., Larsson, K.: Phys. Rev. B25 (1982) 2627.
Haug, A., Schmid, W.: Solid State Electron. 25 (1982) 665.
Mitchel, W.C., Hemenger, P.M.: J. Appl. Phys. 53 (1982) 6880.
Narita, S., Shinbashi, T., Kobayashi, M.: J. Phys. Soc. Jpn. 51 (1982) 2186.
Searle, C.W., Ohmer, M.C., Hemenger, P.M.: Solid State Commun. 44 (1982) 1597.
Wu, R.H., Peaker, A.R.: Solid State Electron. 25 (1982) 463.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Cerofolini, G.F., Pignatel, G.U., Riva, F.: Thin Solid Films 10 (1983) 275.
Fischer, D.W., Rome, J.J.: Phys. Rev. B27 (1983) 4826.
Gosele, U., Tan, T.Y.: Aggregation Phenomena of Point Defects in Si, Sirtl, E. (ed.), The Electrochem. Soc. 1983, p. 17.
Graff, K.: Aggregation Phenomena of Point Defects in Si, Sirtl, E. (ed.), The Electrochem. Soc. 1983, p. 121.
Jellison, G.E., Modine, F.A.: Phys. Rev. B27 (1983) 7466.
Kolbesen, B.O.: Aggregation Phenomena of Point Defects in Si, Sirtl, E. (ed.), The Electrochem. Soc. 1983, p. 155.
Lang, J.E., Madarasz, F.L., Hemenger, P.M.: J. Appl. Phys. 54 (1983) 3612.
Masovic, D.R., Vukajlovic, F.R., Zekovic, S.: J. Phys. C16 (1983) 6731.
Nobili, D.: Aggregation Phenomena of Point Defects in Si, Sirtl, E. (ed.), The Electrochem Soc. 1983, p. 189.
Philip, J., Breazeale, M.A.: J. Appl. Phys. 54 (1983) 752.
Szmulowicz, F.: Appl. Phys. Lett. 43 (1983) 485.
Szmulowicz, F.: Phys. Rev. B28 (1983) 5943.
Szmulowicz, F., Madarasz, F.L.: Phys. Rev. B27 (1983) 2605.
Searle, C.W., Hemenger, P.M., Ohmer, M.C.: Solid State Commun. 48 (1983) 995.
Weber, E.: Appl. Phys. A30 (1983) 1.
Wacker Chemitronics Co.: Silicon calculator 1983.
Hu, J.Z., Spain, I.L.: Solid State Commun. 44 (1984) 263.
Lemke, H.: Phys. Status Solidi (a) 86 (1984) K39.
Olijnuk, H., Sikka, S.K., Holzapfel, W.B.: Phys. Lett. A103 (1984) 137.
Okada, Y., Tokumaru, Y.: J. Appl. Phys. 56 (1984) 314.
Scalar, N.: Appl. Phys. 55 (1984) 2972.
Wagner, P., Holm, C., Sirtl, E., Oeder, R., Zulehner, W.: Festkörperprobleme XXIV (1984) 191.
Wagner, P., Holm, C.: 13th Int. Conf. on Defects in Semiconductors 1984.
Watkins, G.D.: Festkörperprobleme XXIV, Grosse, P. (ed.), Braunschweig: Vieweg 1984, p. 163.
Danilicheva, T.A., Markvicheva, V.S., Nisnevich, J.D.: Izv. Akad. Nauk SSSR Neorg. Mater. 21 (1985) 525.
Fischer, D.W., Mitchel, W.C.: J. Appl. Phys. 58 (1985) 3118.
Fazzio, A., Caldas, M.J., Zunger, A.: Phys. Rev. B32 (1985) 934.
Hertel, N., Materlik, G., Zegenhagen, J.: Z. Phys. B58 (1985) 199.
Harris, R.D., Watkins, G.D.: Proc. Defect. Conf. Coronado, Kimmerling, L.C., (ed.), The Met. Soc. of AIME 1985, p. 799.
Lautenschlager, P., Allen, P.B., Cardona, M: Phys. Rev. B31 (1985) 2163.
Sieh, K.S., Smith, P.V.: Phys. Status Solidi (b) 129 (1985) 259.
Tan, T.Y., Gösele, U.: Appl. Phys. A37 (1985) 1.
Weber, E.R.: Proc. SPIE (Proc. Soc. Photo-Opt. Instrum. Eng.) 524 (1985) 160.
Wang, Z., Chen, K., Qin, G.: Chin. J. Semicond. 6 (1985) 437.
Carlberg, T.: J. Electrochem. Soc. 133 (1986) 1941.
Chen, K.-M., Qin, G.-G.: Proc. 14th Int. Conf. on Defects in Semiconductors, Paris 1986.
Dominguez, E., Jaraiz, M.: J. Electrochem. Soc. 133 (1986) 1895.
Graff, K.: Semiconductor Silicon 1986, H.R. Huff et al. (eds.), The Electrochem. Soc. 1986, p. 751.
Gilles, D., Bergholz, W., Schröter, W.: J. Appl. Phys. 59 (1986) 3590.
Mononi, C.S., Hu, J.Z., Spain, I.L.: Phys. Rev. B34 (1986) 362.
Mikkelsen jr., J.C.: Mater. Res. Soc. Symp. Proc. 59 (1986) 19.
Pensl, G., Roos, G., Holm, C., Wagner, P.: Proc. 14th Int. Conf. on Defects in Semiconductors, Paris 1986.
Stolwijk, N.A., Hölzl, J., Frank, W., Weber, E.R., Mchrer, H.: Appl. Phys A39 (1986) 37.
Stöffler, W., Weber, J.: Proc 14th Int. Conf. on Defects in Semiconductors, Paris 1986.
Schulz, H.J.: European Semiconductor Device Research Conference (ESSDERC) 1986.
Stein, H.J.: Proc. MRS Meeting Boston 1986, Mikkelsen, J. (ed.) MRS Pittsburgh, Pa. 1986, p. 523.
Angelucci, R., Armigliato, A., Landi, E., Nobili, D., Solmi, S.: ESSDERC Conference Bologna 1987.
Azomov, S.A., Yunusov, M.S., Nurkuziev, G.: Fiz. Tekh. Poluprovodn. 21 (1987) 1555;
Azomov, S.A., Yunusov, M.S., Nurkuziev, G.: Sov. Phys. Semicond. (English Transi.) 21 (1987) 944.
Lemke, H.: Phys. Status Solidi (a) 99 (1987) 205.
Nolte, D.D., Walukiewicz, W., Haller, E.E.: Phys. Rev. B36 (1987) 9392.
Pearton, S.J., Corbett, J.W., Shi, T.S.: Appl. Phys. A43 (1987) 153.
Pensl, G.: Proc. 5th Int. School ISPPME 1987.
Rollert, F., Stolwijk, N.A., Mehrer, H.: J. Phys. D20 (1987) 1148.
Stavola, M., Pearton, S.J., Lopata, J., Dautremont-Smith, W.C.: Appl. Phys. Lett. 50 (1987) 1086.
Tsai, J.C.C., Schimmel, D.G., Fair, R.B., Maszara, W.: J. Electrochem. Soc. 134 (1987) 1508.
Jäntsch, O.: private communication.
Mathiot, D., Hocine, S.: 15. Int. Conf. Defects in Semiconductors Budapest 1988.
Stuempel, H., Vorderwuelbecke, M., Mimkes, J.: Appl. Phys. A46 (1988) 159.
Stolwijk, N.A., Grünebaum, D., Perret, M., Brohl, M.: Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest 1988, Trans. Tech. Publ. 1988.
Utzig, J., Gilles, D.: Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest 1988, Ferency, G. (ed.), Trans. Tech. Publ. 1988.
Watkins, G.D.: Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest 1988, Ferency, G. (ed.), Trans. Tech. Publ. 1988.
Nobili, D., Angelucci, R., Armigliato, A., Landi, E., Solmi, S.: J. Electrochem. Soc. 136 (1989) 1142.
References for 1.3
Straumanis, M.E., Aka, A.Z.: J. Appl. Phys. 23 (1952) 330.
Prince, M.B.: Phys. Rev. 92 (1953) 681.
Morin, F.J., Maita, J.P.: Phys. Rev. 94 (1954) 1525.
van der Maesen, F., Brenkman, J.A.: Philips Res. Rep. 9 (1954) 225.
Dunlap, W.C.: Phys. Rev. 97 (1955) 664.
Dexter, R.N., Zeiger, H.J., Lax, B.: Phys. Rev. 104 (1956) 637.
Kosenko, V.E.: Proc. Acad. Sci. USSR, Phys. Ser. (English Transi.) 20 (1956) 1399.
Thurmond, C.D., Guldner W.G., Beach, A.L.: J. Electrochem. Soc. 103 (1956) 603.
van Wieringen, A., Warmolitz, N.: Physica 22 (1956) 849.
Bugai, A.A., Kosenko, V.E., Miselyuk, E.G.: Sov. Phys. Tech. Phys. (English Transi.) 2 (1957) 183.
MacFarlane, G.G., McLean, T.P., Quarrington, J.E., Roberts, V.: Phys. Rev. 108 (1957) 1377.
Pell, E.M.: J. Phys. Chem. Solids 3 (1957) 74.
Woodbury, H.H., Tyler, W.W.: Phys. Rev. 105 (1957) 84.
Valenta, M.W.: Ph. D. Thesis, Univ. Illinois 1958 (Univ. Microfilm 58–5509);
Valenta, M.W.: Bull. Am. Phys. Soc. 2 (1958) 102.
Newman, R., Tyler, W.W.: Solid State Physics, Vol. 8, Seitz, F., Turnbull, D. (eds.) New York: Academic Press 1959, p. 49.
Philipp, H.P., Taft, E.A.: Phys. Rev. 113 (1959) 1002.
Reiss, H., Fuller, C.S.: Semiconductors, Hannay, N.B. (ed.), New York: Reinhold Publ. Corp., 1959.
Tyler, W.W.: J. Phys. Chem. Solids 8 (1959) 59.
Trumbore, F.A., Probansky, E.M., Tartaglia, A.A.: J. Phys. Chem. Solids 11 (1959) 239.
Zwerdling, S., Lax, B., Roth, L.M., Button, K.J.: Phys. Rev. 114 (1959) 80.
Frank, R.C., Thomas jr, J.E.: J. Phys. Chem. Solids 16 (1960) 144.
Kosenko, V.E.: Sov. Phys. Solid State (English Transi.) 1 (1960) 1481.
Trumbore, F.A.: Bell. Syst. Tech. J. 39 (1960) 205.
Belyaev, Yu.I., Zhidkov, V.A.: Sov. Phys. Solid State (English Transi.) 3 (1961) 133.
Wei, L.Y.: J. Phys. Chem. Solids 18 (1961) 162.
Abrikosov, N. Kh., Glasov, V.M., Lin Chên-Yüan: Russ. J. Inorg. Chem. (English Transi.) 7 (1962) 429.
Kaiser, W.: J. Phys. Chem. Solids 23 (1962) 225.
Kosenko, V.E.: Sov. Phys. Solid State (English Transi.) 4 (1962) 42.
Ignatkov, V.D., Kosenko, V.E.: Sov. Phys. Solid State (English Transi.) 4 (1962) 1193.
Trumbore, F.A., Spitzer, W.G., Logan, R.A., Luke, C.L.: J. Electrochem. Soc. 109 (1962) 734.
Tagirov, V.l., Kuliev, A.A.: Sov. Phys. Solid State (English Transi.) 4 (1962) 196.
Boltaks, B.I.: Diffusion in Semiconductors, London: Infosearch Ltd., 1963.
Corbett, J.W., McDonald, R.S., Watkins, G.D.: J. Phys. Chem. Solids 25 (1964) 873.
Glassbrenner, C.J., Slack G.A.: Phys. Rev. 134A (1964) 1058.
Kodera, H.: Jpn. J. Appl. Phys. 3 (1964) 369.
Reuszer, J.H., Fisher, P.: Phys. Rev. 135 (1964) Al 125.
Jones, R.L., Fisher, P.: J. Phys. Chem. Solids 26 (1965) 1125.
Ostroborodova, V.V.: Fiz. Tverd. Tela 7 (1965) 610;
Ostroborodova, V.V.: Sov. Phys.-Solid State (English Transi.) 7 (1965) 484.
Chapman, R.A., Hutchinson, W.G.: Phys. Rev. 157 (1967) 615.
Meer, W., Pommerrenig, D.: Z. Angew. Phys. 23 (1967) 369.
Gromova, O.N., Khodunova, K.M.: Fiz. Khim. Obrab. Mater. 5 (1968) 150;
Gromova, O.N., Khodunova, K.M.: Diffusion and Defect Data 3 (1969) 142.
Isawa, N.: Jpn. J. Appl. Phys. 7 (1968) 81.
Singh, H.P.: Acta Crystallogr. 24a (1968) 469.
Aggarwal, R.L., Zuteck, M.D., Lax, B.: Phys. Rev. 180 (1969) 800.
Faulkner, R.A.: Phys. Rev. 184 (1969) 713.
Aggarwal, R.L.: Phys. Rev. B2 (1970) 446.
Dudko, G.V., Marunina, N.I., Sukhov, G.V., Cherednichenko, D.I.: Sov. Phys. Solid State (English Transi.) 12 (1970) 1016.
Burenkov, Yu.A., Nikanorov, S.P., Stepanov, A.V.: Sov. Phys. Solid State (English Transi.) 12 (1971) 1940;
Burenkov, Yu.A., Nikanorov, S.P., Stepanov, A.V.: Fiz. Tverd. Tela 12 (1970) 2428.
Moore, W.J.: J. Phys. Chem. Solids 32 (1971) 93.
Nilsson, G., Nelin, G.: Phys. Rev. B3 (1971) 364.
Nelin, G., Nilsson, G.: Phys. Rev. B5 (1972) 3151.
Nilsson, G., Nelin, G.: Phys. Rev. B6 (1972) 3777.
Seccombe, S.D., Korn, D.: Solid State Commun. 11 (1972) 1539.
Haller, E.E., Hansen, W.L.: Solid State Commun. 15 (1974) 687.
Hensel, J.C., Suzuki, K.: Phys. Rev. B9 (1974) 4219.
Skolnick, M.S., Eaves, L., Stradling, R.A., Portal, J.C., Askenazy, S.: Solid State Commun. 125 (1974) 1403.
Baker, J.F.C., Hart, M.: Acta Crystallogr. 31a (1975) 2297.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Skolnick, M.S., Eaves, L., unpublished.
Altarelli, M., Lipari, N.O.: Phys. Rev. Lett. 36 (1976) 619.
Baldereschi, A., Lipari, N.O.: Proc. 13th Int. Conf. on the Physics of Semicond., Rome 1976, Fumi, F.G. (ed.) Marves 1976, p. 595.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B30 (1976) 556.
Fink, D., Braunstein, R.: Phys. Status Solidi (b) 73 (1976) 361.
Hufschmidt, M., Möller, W., Pfeiffer, T.: Vak.-Tech. 25 (1976) 206.
Haller, E.E., Hubbard, G.S., Hansen, W.L.: IEEE Trans. Nucl. Sci. NS24 (1977) 48.
Mashovets, T.M.: Int. Conf. on Radiation Effects in Semiconductors, Dubrovnik 1976, Institute of Physics Conf. Ser. No. 31 1977, p. 30.
Stojic, M., Spiric, V., Kostoski, D.: Inst. Phys. Conf. Ser. 31 (1977) 304.
Weber, W.: Phys. Rev. B15 (1977) 4789.
Emstev, V.V., Goncharev, L.A., Dostkhodzhoev, T.N.: Fiz. Tekh. Poluprovodn. 12 (1978) 139;
Emstev, V.V., Goncharev, L.A., Dostkhodzhoev, T.N.: Sov. Phys. Semicond. (English Transi.) 12 (1978) 78.
Haller, E.E., Falicov, L.M.: Phys. Rev. Lett. 41 (1978) 1192.
Matsumoto, S., Niimi, T.: J. Electrochem. Soc. 125 (1978) 1307.
Ahmad, C.N., Adams, A.R., Pitt, G.D.: J. Phys. C12 (1979) L379.
Martin, T.P., Schaber, H.: Z. Physik B35 (1979) 61.
Golubev, N.F., Latyshev, A.V.: Sov.Phys. Semicond. (English Transi.) 14 (1980) 1074.
Joos, B., Haller, E.E., Falicov, L.M.: Phys. Rev. B22 (1980) 832.
Zverev, V.N.: Sov. Phys. Solid State (English Transi.) 22 (1980) 1921; Fiz. Tverd. Tela 22 (1980).
Jacoboni, C., Nava, F., Canali, C., Ottaviani, G.: Phys. Rev. B24 (1981) 1014.
Räisänen, J., Hirvonen, J., Anttila, A.: Solid-State Electron. 24 (1981) 333.
Clauws, P., Broeckx, J., Simeon, E., Vennik, J.: Solid State Commun. 44 (1982) 1011.
Dorner, P., Gust, W., Lodding, A., Odelius, H., Predel, B.: Acta Metall. 30 (1982) 941.
Dorner, P., Gust, W., Lodding, A., Odelius, H., Predel, B., Roll, U.: Z. Metallkd. 73 (1982) 325.
Edwin, R.P., Dudermel, M.T., Lamare, M.: Appl. Optics 21 (1982) 878.
Emstev, V.V., Mashovets, T.V., Nazaryan, E.K., Haller, E.E.: Sov. Phys. Semicond. (English Transi.) 16 (1982) 182.
Hansen, W.L., Haller, E.E., Luke, P.N.: IEEE Trans. Nucl. Sci. NS-29 (1982) 738.
Hirose, Y., Shimomae, K., Hamaguchi, C.: J. Phys. Soc. Jpn. 51 (1982) 2226.
Pearton, S.J.: Aust. J. Phys. 35 (1982) 53.
Werner, A., Sanjorjo, J.A., Cardona, M.: Solid State Commun. 44 (1982) 155.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Allen, P.B., Cardona, M.: Phys. Rev. B27 (1983) 4760.
Cross, J.W., Holt, L.T., Ramdas, A.K., Sauer, R., Haller, E.E.: Phys. Rev. B28 (1983) 6953.
López-Cruz, E., Cardona, M.: Solid State Commun. 45 (1983) 787.
Philip, J., Breazeale, M.A.: J. Appl. Phys. 54 (1983) 752.
Qadri, S.B., Skelton, E.F., Webb, A.W.: J. Appl. Phys. 54 (1983) 3609.
Szmulowicz, F.: Phys. Rev. B28 (1983) 5943.
Bakhchieva, S.R., Kekelidse, N.P., Kekua, M.G.: Phys. Status Solidi (a) 83 (1984) 139.
Clauws, P., Vennik, J.: Phys. Rev. B30 (1984) 4837.
Hsieh, T.C., Miller, T., Chiang, T.C.: Phys. Rev. B30 (1984) 7005.
Pearton, S.J., Haller, E.E., Kahn, J.M.: J. Phys. C17 (1984) 2375.
Vina, L., Logothetidis, S., Cardona, M.: Phys. Rev. B30 (1984) 1979.
Grimmeiss, H.G., Larsson, K., Montelius, L.: Solid State Commun. 54 (1985) 863.
Lautenschlager, P., Allen, P.B., Cardona, M.: Phys. Rev. B31 (1985) 2163.
McMurray, R.E.: Solid State Commun. 53 (1985) 1127.
Nichols, J.M., Hansson, G.V., Karlsson, U.O., Persson, P.E.S., Uhrberg, R.I.G., Engelhard, R., Flodström, S.A., Koch, E.E.: Phys. Rev. B32 (1985) 6663.
Salib, E.H., Fisher, P., Simmonds, P.E.: Phys. Rev. B32 (1985) 2424.
Stolwijk, N.A., Frank, W., Hölzl, J., Pearton, S.J., Haller, E.E.: J. Appl. Phys. 57 (1985) 5211.
Werner, M., Mehrer, H., Hochheimer, H.D.: Phys. Rev. B32 (1985) 3930.
Wachs, A.L., Miller, T., Hsieh, T.C., Shapiro, A.P., Chiang, T.C.: Phys. Rev. B32 (1985) 2326.
Sodervall, U., Odelius, H., Lodding, A., Roll, U., Predel, B., Gust, W., Dorner, P.: Philos. Mag. A54 (1986) 539.
References for 1.4
Kohnke, E.E., Ewald, A.W.: Phys. Rev. 102 (1956) 1481.
Thewlis, J., Davey, A.R.: Nature (London) 174 (1959) 1011.
Busch, G.A., Kern, R.: Solid State Physics, F. Seitz, D. Turnbull eds., Academic Press, New York, Vol. 11, 1960, p. 1.
Novikova, S.I.: Sov. Phys. Solid State (English Transi.) 2 (1961) 2087;
Novikova, S.I.: Fiz. Tverd. Tela 2 (1960) 2341.
Tufte, O.N., Ewald, A.W.: Phys. Rev. 122 (1961) 1431.
Lindquist, R.E., Ewald, A.W.: Phys. Rev. 135 (1964) A191.
Booth, B.L., Ewald, A.W.: Phys. Rev. 168 (1968) 805.
Groves, S.H., Pidgeon, C.R., Ewald, A.W., Wagner, R.J.: J. Phys. Chem. Solids 31 (1970) 2031.
Hanyu, T.: J. Phys. Soc. Jpn. 31 (1971) 1738.
Lavine, C.F., Ewald, A.W.: J. Phys. Chem. Solids 32 (1971) 1121.
Price, D.L., Rowe, J.M., Nicklow, R.M.: Phys. Rev. B3 (1971) 1268.
Liu, L., Leung, W.: Phys. Rev. B12 (1975) 2336.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Weber, W.: Phys. Rev. B15 (1977) 4789.
References for 1.5
Chang, H.C., Le May, Ch.Z., Wallace, L.F.: Silicon carbide — a high temperature semiconductor, O’Connor, J.R., Smiltens, J. (eds.), Oxford, London, New York, Paris: Pergamon Press 1960, p. 496.
Philipp, H.R., Taft, E.A.: Silicon Carbide — A High Temperature Semiconductor, J.R. O’Connor and J. Smiltens eds., Pergamon Press, Oxford, London, New York, Paris 1960, p. 366.
Scace, R.I., Slack, G.A.: Silicon Carbide — A High Temperature Semiconductor, J.R. O’Connor and J. Smiltens eds., Pergamon Press, Oxford, London, New York, Paris 1960, p. 24.
Taylor, A., Jones, R.M.: Silicon Carbide — A High Temperature Semiconductor, J.R. O’Connor and J. Smiltjens eds., Pergamon Press, Oxford, London, New York, Paris 1960, p. 147.
Patrick, L., Hamilton, D.R., Choyke, W.J.: Phys. Rev. 132 (1963) 2023.
Van Daal, H.J., Knippenberg, W.F., Wasscher, J.D.: J. Phys. Chem. Solids 24 (1983) 109.
Choyke, W.J., Patrick, L., Hamilton, D.R.: Proc. 7th Int. Conf. Semicond., Paris 1964, M. Hulin ed., Dunod, Paris 1964, p. 751.
Slack, G.A.: J. Appl. Phys. 35 (1964) 3460.
Zanmarchi, G.: Proc. 7th Int. Conf. Semicond., Paris 1964, M. Hulin ed., Dunod, Paris 1964, p. 57.
Arlt, G., Schodder, G.R.: J. Acoust. Soc. Am. 37 (1965) 384.
Dalven, R.: J. Phys. Chem. Solids 26 (1965) 439.
Scace, R.I., Slack, G.A.: J. Chem. Phys. 42 (1965) 805.
Kroko, L.J., Milnes, A.G.: Solid-State Electron. 9 (1966) 1125.
Nelson, W.E., Holder, F.A., Rosenbloom, A.: J. Appl. Phys. 37 (1966) 333.
Patrick, L., Hamilton, D.R., Choyke, W.J.: Phys. Rev. 143 (1966) 526.
Vodakov, Yu.A., Mokhov, E.N., Reifman, M.B.: Sov. Phys.-Solid State 8 (1966) 1040.
Barrett, D.L., Campbell, R.B.: J. Appl. Phys. 38 (1967) 53.
Ellis, B., Moss, T.S.: Proc. Royal Soc. (London) A299 (1967) 383.
Ellis, B., Moss, T.S.: Proc. Royal Soc. (London) A299 (1967) 393.
Gomes de Mesquita, A.H.: Acta Crystallogr. 23 (1967) 610.
Kalnin, A.A., Pasynkov, V.V., Tairov, Y.M., Yaskov, D.A.: Sov. Phys.-Solid State 8 (1967) 2381.
Choyke, W.J.: Mater. Res. Bull. 4 (1969) S 141.
Feldman, D.W., Parker, J.H., Choyke, W.J., Patrick, L.: Phys. Rev. 173 (1968) 787.
Maslakovets, Yu.P., Mokhov, E.N., Vodakov, Yu.A., Lomakina, G.A.: Sov. Phys.-Solid State 10 (1968) 634.
Zanmarchi, G.: J. Phys. Chem. Solids 29 (1968) 1727.
Kern, E.L., Hamill, D.W., Deem, H.W., Sheets, H.D.: Mater. Res. Bull. 4 (1969) 25.
Mokhov, E.N., Vodakov, Yu.A., Lomakina, G.A.: Sov. Phys. Solid-State 11 (1969) 415.
Shaffer, P.T.B., Naum, R.G.: J. Opt. Soc. Am. 59 (1969) 1498.
Choyke, W.J., Patrick, L.: Phys. Rev. B2 (1970) 4959.
Hagen, S.H., Kapteyns, C.J.: Philips Res. Repts. 25 (1970) 1.
Patrick, L., Choyke, W.J.: Phys. Rev. B2 (1970) 2255.
Powell, J.A.: J. Opt. Soc. Am. 62 (1972) 341.
Hemstreet, L.A., Fong, C.Y.: Silicon Carbide- 1973, R.C. Marshall, J.W. Faust, C.E. Ryan eds., Univ. of South Carolina Press, Columbia, S.C. 1974, p. 284.
Vodakov, Yu.A., Mokhov, E.N.: Silicon Carbide, 1973, Marshall, R.C., Faust, J.W., Ryan, C.E. (eds.), Columbia, S.C.: University of South Carolina Press 1974, p. 508.
Kunc, K., Balkanski, M., Nusimovici, M.A.: Phys. Status Solidi (b) 72 (1975) 229.
Kuwabara, H., Yamada, S.: Phys. Status Solidi A30 (1975) 739.
Slack, G.A., Bartram, S.F.: J. Appl. Phys. 46 (1975) 89.
Kuwabara, H., Yamanaka, K., Yamada, S.: Phys. Status Solidi A37 (1976) K 157.
Dean, P.J., Choyke, W.J., Patrick, L.: J. Lumin. 15 (1977) 299.
Dubrovskii, G.B., Lepneva, A.A.: Sov. Phys. Solid State (English Transi.) 19 (1977) 729;
Dubrovskii, G.B., Lepneva, A.A.: Fiz. Tverd. Tela 19 (1977) 1252.
Suzuki, A., Matsunami, H., Tanaka, T.: J. Electrochem. Soc. 124 (1977) 241.
Tairov, Y.M., Vodakov, Y.A.: Topics in Applied Physics, vol. 17: Electroluminescence, Pankove, J.I. (ed.), Berlin, Heidelberg, New York: Springer-Verlag 1977, p. 31.
Ravindra, N.M., Srivastava, V.K.: Phys. Chem. Solids 40 (1979) 791.
Ikeda, M., Matsunami, H., Tanaka, T.: Phys. Rev. B22 (1980) 2842.
Bimberg, D., Altarelli, M., Lipari, N.O.: Solid State Commun. 40 (1981) 437.
Humphreys, R.G., Bimberg, D., Choyke, W.J.: Solid State Commun. 39 (1981) 163.
Kushawa, M.S.: Phys. Status Solidi (b) 111 (1982) 337.
Lee, D.H., Joannopoulos, J.D.: Phys. Rev. Lett. 48 (1982) 1846.
Olego, D., Cardona, M., Vogl, P.: Phys. Rev. B25 (1982) 3878.
Olego, D., Cardona, M.: Phys. Rev. B25 (1982) 1151.
Tajima, Y., Kijima, K., Kingery, W.D.: J. Chem. Phys. 77 (1982) 2592.
Nishino, S., Powell, J.A., Will, H.A.: Appl. Phys. Lett. 42 (1983) 460.
Gorban’, I.S., Gubanov, V.A., Lysenko, V.G., Pletyushkin, A.A., Timofeev, V.B.: Sov. Phys. Solid State (English Transi.) 26 (1984) 1385;
Gorban’, I.S., Gubanov, V.A., Lysenko, V.G., Pletyushkin, A.A., Timofeev, V.B.: Fiz. Tverd. Tela 26 (1984) 2282.
Sasaki, K., Sakuma, E., Misawa, S., Yoshida, S., Gonda, S.: Appl. Phys. Lett. 45 (1984) 72.
Anikin, M.M., Lebedev, A.A., Syrkin, A.L., Suvorov, A.V.: Sov. Phys.-Semicond. 19 (1985) 69.
Kaplan, R., Wagner, R.J., Kim, H.J., Davis, R.F.: Solid State Commun. 55 (1985) 67.
References for 1.6
Braunstein, R., Moore, A.R., Herman, F.: Phys. Rev. 109 (1958) 695.
Glicksman, M.: Phys. Rev. 111 (1958) 125.
Busch, G., Vogt, O.: Helv. Phys. Acta 33 (1960) 437.
Kustov, E.F., Mel’nikov, E.A., Sutchenkov, A.A., Levadnii, A.I., Filikov, V.A.: Sov. Phys. Semicond. (English Transi.)
(1983) 481; Fiz. Tekh. Poluprovodn. 17 (1983) 769.
Krishnamurti, S., Sher, A., Chen, A.: Appl. Phys. Lett. 47 (1985) 160.
References for 2.2
Stone, B., Hill, D.: Phys. Rev. Lett. 4 (1960) 282.
Wang, C.C., Cardona, M., Fischer, A.G.: RCA Review 25 (1964) 159.
Iwami, M., Fujita, N., Kawabe, K.: Jpn. J. Appl. Phys. 10 (1971) 1746.
Hemstreet, L.A., Fong, C.Y.: Phys. Rev. B6 (1972) 1464.
Sohno, K., Takigawa, M., Nakada, T.: J. Cryst. Growth 24/25 (1974) 193.
Slack, G.A., Bartram, S.F.: J. Appl. Phys. 46 (1975) 89.
Takenaka, T., Takigawa, M., Sohno, K.: Jpn. J. Appl. Phys. 15 (1976) 2021.
Kato, N., Kamura, W., Iwami, M., Kawabe, K.: Jpn. J. Appl. Phys. 16 (1977) 1623.
Yugo, S., Kimura, T.: Phys. Status Solidi (a) 59 (1980) 363.
Kurbatov, G.A., Sidorin, V.K., Sidorin, K.K., Sheludchenko, A.M.: Sov. Phys. Semicond. (English Transl.) 17 (1983) 746;
Kurbatov, G.A., Sidorin, V.K., Sidorin, K.K., Sheludchenko, A.M.: Fiz. Tekh. Poluprovodn. 17 (1983) 1180.
Sanjurjo, J.A., López-Cruz, E., Vogl, P., Cardona, M.: Phys. Rev. B28 (1983) 4579.
Wettling, W., Windschleif, J.: Solid State Commun. 50 (1984) 33.
Huang, M., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
References for 2.3
Perri, A., LaPlaca, S., Post, B.: Acta Crystallogr. 11 (1958) 310.
Elliott, R.P.: Constitution of binary alloys, first suppl., McGraw Hill, New York 1965.
Stuckel, D.J.: Phys. Rev. B1 (1970) 3458.
Merrill, L.: J. Phys. Chem. Ref. Data 6 (1977) 1205.
References for 2.4
Edwards, J., Kawabe, K., Stevens, G., Tredgold, R.H.: Solid State Commun. 3 (1965) 99.
Collins, A.T., Lightowlers, E.C., Dean, P.J.: Phys. Rev. 158 (1967) 833.
MacChesney, J.B., Bridenbaugh, P.M., O’Connor, P.B.: Mater. Res. Bull. 5 (1970) 783.
Slack, G.A.: J. Phys. Chem. Solids 34 (1973) 321.
Sirota, N.N., Golodushko, V.Z.: Tezisy Dokl., Vses Konf. Khi., Svyazi Poluprovdn. Polumetallakh 5th (1974) 98.
Francis, R.W., Worrell, W.L.: J. Electrochem. Soc. 123 (1976) 430.
Yamashita, H., Fukui, K., Misawa, S., Yoshida, S.: J. Appl. Phys. 50 (1979) 896.
Roskovcova, L., Pastrnak, J.: Czech. J. Phys. B30 (1980) 586.
Iwama, S., Hayakawa, K., Arizumi, T.: J. Cryst. Growth 56 (1982) 265.
Kobayashi, A., Sankey, O.F., Volz, S.M., Dow, J.D.: Phys. Rev. B28 (1983) 935.
Sanjurjo, J.A., Lopez-Cruz, E., Vogl, P., Cardona, M.: Phys. Rev. B28 (1983) 4579.
Carlone, C., Lakin, K.M., Shanks, H.R.: J. Appl. Phys. 55 (1984) 4010.
Huang, M.Z., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
References for 2.5
Grimmeiss, H.G., Kischio, W., Rabenau, A.: Phys. Chem. Solids 16 (1960) 302.
Steigmeier, E.F.: Appl. Phys. Lett. 3 (1963) 6.
Reid, F.J., Miller, S.E., Goering, H.L.: J. Electrochem. Soc. 113 (1966) 467.
Reid, F.J., e.a.: Batelle Memorai. Inst. Ohio, High-Temperature Material Study, NASA CR-86021, June 1967, Contract No. NAS 12–107 N68–14557.
Caveney, R.J.: Philos. Mag. 17 (1968) 943. 70M Monemar, B.:
Caveney, R.J.: Solid State Commun. 8 (1970) 1295.
Onton, A.: Proc. 10th Int. Conf. Phys. Semicond., Cambridge/Mass. 1970, USAC, Oak Ridge 1970. 71L
Lawaetz, P.: Phys. Rev. B4 (1971) 3460.
Monemar, B.: Phys. Rev. B8 (1973) 5711.
Osamura, K., Murakami, Y.: J. Phys. Chem. Solids 36 (1975) 1354.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Yu, S.C., Spain, I.L., Skelton, E.F.: Solid State Commun. 25 (1978) 49.
Bessolov, V.N., Konnikov, S.G., Umanskii, V.I. Yakovlev, Yu.P.: Sov. Phys. Solid State (English Transl.) 24 (1982) 875;
Bessolov, V.N., Konnikov, S.G., Umanskii, V.I. Yakovlev, Yu.P.: Fiz. Tverd. Tela 24 (1982) 1528.
Huang, M., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
Kagaya, H.-M., Soma, T.: Phys. Status Solidi (b) 127 (1985) 89.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
References for 2.6
Pashintsev, LI., Sirota, N.N.: Dokl. Akad. Nauk SSSR 3 (1959) 38.
Kischio, W.: Z. Anorg. Allg. Chem. 328 (1964) 187.
Whitaker, J.: Solid State Electron. 8 (1965) 649.
Pearson, W.B.: A Handbook of Lattice Spacing and Structure of Metals and Alloys, Pergamon Press, Oxford-Landon 1967.
Ettenberg, M., Pfaff, R.J.: J. Appl. Phys. 41 (1970) 3926.
Kressel, H., Nicoll, F.H., Ettenberg, M., Yim, W.M., Sigai, A.G.: Solid State Commun. 8 (1970) 1407.
Onton, A.: Proc. 10th Int. Conf. Phys. Semicond., Cambridge/Mass. 1970, USAEC, New York 1970, p. 107.
Berninger, W.H., Rediker, R.H.: Bull. Am. Phys. Soc. 16 (1971) 305.
Ettenberg, M., Sigai, A.G., Dreeben, A., Gilbert, S.L.: J. Electrochem. Soc. 119 (1971) 1355.
Fern, R.E., Onton, A.: J. Appl. Phys. 42 (1971) 3499.
Monemar, B.: Phys. Rev. B8 (1973) 5711.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson and A.C. Beer eds., Academic Press, New York and London 1975.
Chen, A., Sher, A.: Phys. Rev. B22 (1980) 3886.
Lee, HJ., Juravel, L.Y., Woolley, J.C., SpringThorpe, A.J.: Phys. Rev. B21 (1980) 659.
Bimberg, D., Bludau, W., Linnebach, R., Bauser, E.: Solid State Commun. 37 (1981) 987.
Kagaya, H.-M., Soma, T.: Solid State Commun. 48 (1983) 785.
Adachi, S.: J. Appl. Phys. 58 (1985) R1.
Campi, D., Papuzza, C.: J. Appl. Phys. 57 (1985) 1305.
Huang, M., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
References for 2.7
Welker, H.: Z. Naturforsch, 8a (1953) 248.
Oswald, F., Schade, R.: Z. Naturforsch. 9a (1954) 611.
Giesecke, G., Pfister, H.: Acta Crystallogr. 11 (1958) 369.
Nasledov, D.N., Slobodchikov, S.V.: Sov. Phys. Techn. Phys. 3 (1958) 669.
Reid, F.J., Willardson, R.K.: J. Electron. Control 5 (1958) 54.
Bolef, D.I., Menes, M.: J. Appl. Phys. 31 (1960) 1426.
Turner, W.J., Reese, W.E.: Phys. Rev. 117 (1960) 1003.
Hass, M., Henvis, B.W.: J. Phys. Chem. Solids 23 (1962) 1099.
Turner, W.J., Reese, W.E.: Phys. Rev. 127 (1962) 126.
Novikova, S.I., Abrikhosov, N.Kh.: Sov. Phys. Solid State (English Transl.) 5 (1963) 1558;
Novikova, S.I., Abrikhosov, N.Kh. Fiz. Tverd. Tela 5 (1963) 2138.
Stirn, R.J., Becker, W.M.: Phys. Rev. 141 (1966) 621,
Stirn, R.J., Becker, W.M.: Phys. Rev. 148 (1966) 907.
Ahlburn, B.T., Ramdas, A.K.: Phys. Rev. 167 (1968) 717.
Glazov, V.M., Chizhevskaya, S.N., Evgen’ev, S.B.: Zh. Fiz. Khim. 43 (1969) 373.
Muzhdaba, V.M.; Nashel’skii, A.Ya., Tamarin, P.V., Shalyt, S.S.: Sov. Phys. Solid State (English Transl.) 10 (1969) 2265;
Muzhdaba, V.M.; Nashel’skii, A.Ya., Tamarin, P.V., Shalyt, S.S.: Fiz. Tverd. Tela 10 (1968) 2866.
Lawaetz, P.: Phys. Rev. B4 (1971) 3460
Weil, R.: J. Appl. Phys. 43 (1972) 4271.
Osamura, K, Murakami, Y.: J. Phys. Chem. Solids 36 (1975) 931.
Wiley, D.J.: in “Semiconductors and Semimetals”, vol. 10 Willardson, R.K., Beer, A.C. eds., Academic Press, New York 1975.
Baublitz, M., Ruoff, A.L.: J. Appl. Phys. 54 (1980) 2109.
Joullié, A., Girault, B., Joullié, A.M., Zien-Eddine, A.: Phys. Rev. B25 (1982) 7830.
Alibert, C., Joullié, A., Joullié, A.M., Ance, C.: Phys. Rev. B27 (1983) 4946.
Huang, M., Ching, W.Y.: J. Phys. Chem. Solids 46 (1985) 977.
Kagaya, H.M., Soma, T.: Phys. Status Solidi (b) 127 (1985) 89.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
Ves, S., Strössner, K., Cardona, M.: Solid State Commun. 57 (1986) 483.
References for 2.8
Maruska, H.P., Tietjen, J.J.: Appl. Phys. Lett. 15 (1969) 327.
Manchon, D.D., Barker, A.S., Dean, J.P, Zetterstrom, R.B.: Solid State Commun. 8 (1970) 1227.
Dingle, R., Ilegems, M.: Solid State Commun. 9 (1971) 175.
Ejder, E.: Phys. Status Solidi (a) 6 (1971) K39.
Ilegems, M.: J. Cryst. Growth 13/14 (1972) 360.
Lemos, V., Argüello, C.A., Leite, R.C.C.: Solid State Commun. 11 (1972) 1351.
Barker, A.S., Ilegems, M.: Phys. Rev. B7 (1973) 743.
Ilegems, M., Dingle, R.: J. Appl. Phys. 44 (1973) 4234.
Ilegems, M., Montgomery, H.C.: J. Phys. Chem. Solids 34 (1972) 885.
Pankove, J.I., Duffy, M.T., Miller, E.A., Berkeyheiser, J.E.: J. Lumin. 8 (1973) 89.
Bloom, S., Harbeke, G., Meier, E., Ortenburger, LB.: Phys. Status Solidi (b) 66 (1974) 161.
Lagerstedt, O., Monemar, B.: J. Appl. Phys. 45 (1974) 2266.
Monemar, B.: Phys. Rev. B10 (1974) 676.
Rheinländer, B., Neumann, H.: Phys. Status Solidi (b) 64 (1974) K123.
Pankove J.I., Bloom, S., Harbeke, G.: RCA Rev. 36 (1975) 163.
Sheleg, A.U., Savastenko, V.A.: Vesti Akad. Nauk BSSR, Ser. Fiz. Mat. Nauk 3 (1976) 126.
Sichel, E.K., Pankove, J.I.: J. Phys. Chem. Solids 38 (1977) 330.
Crouch, R.K., Debnam, W.J, Fripp, A.L.: J. Mater. Sci. 13 (1978) 2358.
Savastenko, V.A., Sheleg, A.U.: Phys. Status Solidi (a) 48 (1978) K135.
Lagerstedt, O., Monemar, B.: Phys. Rev. B19 (1979) 3064.
Vavilov, V.S., Makarov, S.I., Chukichev, M.V., Chetverikova, I.F.: Sov. Phys. Semicond. (English Transl.) 13 (1979) 1259;
Vavilov, V.S., Makarov, S.I., Chukichev, M.V., Chetverikova, I.F.: Fiz. Tekh. Poluprov. 13 (1979) 2153.
Monemar, B., Lagerstedt, O., Gislason, H.P.: J. Appl. Phys. 51 (1980) 625.
Monemar, B., Gislason, H.P., Lagerstedt, O.: J. Appl. Phys. 51 (1980) 640.
References for 2.9
Chang, L.L., Pearson, G.L.: J. Appl. Phys. 35 (1964) 374.
Nelson, D.F., Johnson, L.F., Gershenzon, M.: Phys. Rev. 135 (1964) A1399.
Loescher, D.H., Allen, J.W., Pearson, G.L.: J. Phys. Soc. Jpn. 21 Suppl. (1966) 239.
Dean, P.J., Henry, C.H.: Phys. Rev. 176 (1968) 928.
Yarnell, J.L., Warren, J.L., Wenzel, R.G., Dean, P.J.: in “Neutron Inelastic Scattering Symposion”, Copenhagen 1968, vol. 1, IAEA, Vienna 1968, p. 301.
Muzhdaba, V.M., Nashel’skii, A.Ya., Tamarin, P.V., Shalyt, S.S.: Sov. Phys. Solid State (English Transl.) 10 (1969) 2265;
Muzhdaba, V.M., Nashel’skii, A.Ya., Tamarin, P.V., Shalyt, S.S.: Fiz. Tverd. Tela 10 (1968) 2866.
Panish, M.B., Casey, H.C.: J. Appl. Phys. 40 (1969) 163.
Young, A.B.Y., Pearson, G.L.: J. Phys. Chem. Solids 31 (1970) 517.
Olsson, R.: Phys. Status Solidi (b) 46 (1971) 163.
Ilegems, M., O’Mara, W.C.: J. Appl. Phys. 43 (1972) 1190.
Kudman, I., Pfaff, R.J.: J. Appl. Phys. 43 (1972) 3760.
Schwerdtfeger, C.P.: Solid State Commun. 11 (1972) 779.
Dean, P.J.: Luminescence of Crystals, Molecules and Solutions, Williams, F.E. (ed.), New York: Plenum Press 1973, p. 538.
Dean, P.J.: Progress in Solid State Chemistry, Vol. 8, McCaldin, J.O., Somorjai, G. (eds.), New York: Pergamon Press 1973, p. 1.
Grimmeiss, H.G., Monemar, B.: Phys. Status Solidi (a) 19 (1973) 505.
Kopylov, A.A., Pikhtin, A.N.: Sov. Phys. Solid State (English Transl.) 16 (1974) 1837;
Kopylov, A.A., Pikhtin, A.N.: Fiz. Tverd. Tela 16 (1974) 1837.
Ley, L., Pollak, R.A., McFeely, R.R., Kowalczyk, S.P.: Phys. Rev. B9 (1974) 600.
Boyle, W.F., Sladek, R.J.: Phys. Rev. B11 (1975) 2933.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson and A.C. Beer eds., Academic Press, New York and London 1975.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Evwaraye, A.O., Woodbury, H.H.: J. Appl. Phys. 47 (1976) 1595.
Street, R.A., Senske, W.: Phys. Rev. Lett. 37 (1976) 1292.
Kopylov, A.A., Pikhtin A.N.: Sov. Phys. Semicond. (English Transl.) 11 (1977) 510;
Kopylov, A.A., Pikhtin A.N.: Fiz. Tekh. Poluprovodn. 11 (1977) 867.
Dzhafarov, T.D., Litvin, A.A., Khudyakov, S.V.: Sov. Phys. Solid State 20 (1978) 152.
Merrill, L.: J. Phys. Chem. Ref. Data 6 (1977) 1205.
Humphreys, R.G., Rössler, U., Cardona, M.: Phys. Rev. B18 (1978) 5590.
Kopylov, A.A., Pikhtin, A.N.: Solid State Commun. 26 (1978) 735.
Borcherds, P.H., Kung, K., Alfreys, G.F., Hall, R.L.: J. Phys. C12 (1979) 4699.
Bessolov, V.N., Dedegkaev, T.T., Efimov, A.N., Kartenko, N.F., Yakovlev, Yu.P.: Sov. Phys. Solid State (English Transl.) 22 (1980) 1652;
Bessolov, V.N., Dedegkaev, T.T., Efimov, A.N., Kartenko, N.F., Yakovlev, Yu.P.: Fiz. Tverd. Tela 22 (1980) 2834.
Clerjaud, B., Gendron, F., Porte, C.: Appl. Phys. Lett. 38 (1981) 212.
Yogurtcu, Y.K., Miller, A.J., Saunders, G.A.: J. Phys. Chem. Solids 42 (1981) 49.
Baublitz, M., Ruoff, A.L.: J. Appl. Phys. 53 (1982) 6179.
Burkhard, H., Dinges, H.W., Kuphal, E.: J. Appl. Phys. 53 (1982) 655.
Patel, C., Sherman, W.F., Wilkinson, G.R.: Phys. Status Solidi (b) 111 (1982) 649.
Aspnes, D.E., Studna, A.A: Phys. Rev. B27 (1983) 985.
Deus, P., Voland, U., Schneider, H.A.: Phys. Status Solidi (a) 80 (1983) K29.
Jezewski, M., Baranowski, J.M.: 4th “Lund” Int. Conf. on Deep Level Impurities in Semicond., Eger Hungary, 1983, unpublished.
Kao, Y.C., Eknoyan, O.: J. Appl. Phys. 54 (1983) 2468.
Miura, N., Kido, G., Suekane, M., Chikazumi, S.: J. Phys. Soc. Jpn. 52 (1983) 2838.
Miura, N., Kido, G., Suekane, M., Chikazumi, S.: Physica 117B&118B (1983) 66.
Sharma, A.C., Ravindra, N.M., Auluck, S., Srivastava, V.K.: Phys. Status Solidi (b) 120 (1983) 715.
Samara, G.A.: Phys. Rev. B27 (1983) 3494.
Takizawa, T.: J. Phys. Soc. Jpn. 52 (1983) 1057.
Peaker, A.R., Kaufmann, U., Zhan-Guo Wang, Wörner, R., Hamilton, B., Grimmeiss, H.G.: J. Phys. C17 (1984) 6161.
Solal, F., Jezequel, G., Houzay, F., Barski, A., Pinchaux, R.: Solid State commun. 52 (1984) 37 and private communication from G. Jezequel.
Tmar, M., Gabriel, A., Chatillon, C., Ansara, I.: J. Crystal Growth 68 (1984) 557.
Yang, X.Z., Samuelson, L., Grimmeiss, H.G.: J. Phys. C17 (1984) 6521.
Brehme, S.: J. Phys. C18 (1985) L319.
Campi, D., Papuzza, C.: J. Appl. Phys. 57 (1985) 1305.
Ulrici, W., Eaves, L., Friedland, K., Halliday, D.P., Kreissl, J.: Defects in Semiconductors, Proc. 14th Internat. Conf. Defects in Semicond., Paris (1986), von Bardeleben, H.J. (ed.), Materials Science Forum, Vol. 10 ··· 12, Trans. Tech. Publications, Switzerland, 1986, p. 639.
Roura, P., Bremond, G., Nouailhat, A., Guillot, G., Ulrici, W.: Appl. Phys. Lett. 51 (1987) 1696.
Ulrici, W., Kreissl, J., Hayes, D.G., Eaves, L., Friedland, K.: Materials Science Forum, Vol. 38 ··· 41, Trans. Tech. Publications, Switzerland, 1989, p 875.
References for 2.10
Goldstein, B.: Phys. Rev. 118 (1960) 1024.
Reiss, H., Fuller, C.S.: Semiconductors, Hannay, N.B. (ed.), New York: Reinhold 1960, p. 230.
Goldstein, B.: Phys. Rev. 121 (1961) 1305.
Vieland, L.J.: J. Phys. Chem. Solids 21 (1961) 318.
Fane, R.W., Goss, A.J.: Solid State Electron. 6 (1963) 383.
Boltaks, B.I., Shishiyanu, F.S.: Sov. Phys. Solid State 5 (1964) 1680.
Casey, H.C., Pearson, G.L.: J. Appl. Phys. 35 (1964) 3401.
Chang, L.L., Pearson, G.L.: J. Appl. Phys. 35 (1964) 1960.
Hall, R.N., Racette, J.H.: J. Appl. Phys. 35 (1964) 379.
Holland, M.G.: Proc. 7th Int. Conf. Phys. Semicond., Paris 1964, Dunod, Paris 1964.
Kendall, D.L.: Appl. Phys. Lett. 4 (1964) 67.
Kogan, L.M., Meskin, S.S., Ya Goikhmann, A.: Sov. Phys. Solid State 6 (1964) 882.
Sokolov, V.I., Shishiyanu, F.S.: Sov. Phys. Solid State 6 (1964) 265.
Moore, R.G.: Bull. Am. Phys. Soc. 10 (1965) 731.
Seltzer, M.S.: J. Phys. Chem. Solids 26 (1965) 243.
Straumanis, M.E., Kim. C.D.: Acta. Crystallogr. 19 (1965) 256.
Drabble, J.R., Brammer, A.J.: Solid State Commun. 4 (1966) 467.
Larrabee, G.B., Osborne, J.F.: J. Electrochem. Soc. 113 (1966) 564.
Poltoratskii, E.A., Stuckelbnikov, V.M.: Sov. Phys. Solid State 8 (1966) 770.
Kendall, D.L.: Semiconductors and Semimetals, Vol. 4, Willardson, Beer (eds.), New York, London: Academic Press 1968, p. 163.
Panish, M.B., Casey, H.C.: J. Appl. Phys. 40 (1969) 163.
Rachmann, J., Biermann, R.: Solid State Commun. 7 (1969) 1771.
Showan, S.R., Shaw, D.: Phys. Status Solidi 35 (1969) K79.
Stringfellow, G.B.: Mater. Res. Bull. 6 (1971) 371.
Stillman, G.E., Larsen, D.M., Wolfe, C.M., Brandt, R.C.: Solid State Commun. 9 (1971) 2245.
Brown, W.J., Blakemore, J.S.: J. Appl. Phys. 43 (1972) 2242.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B7 (1973) 4605.
Casey, H.C.: Atomic Diffusion in Semiconductors, Shaw, D. (ed.), New York: Plenum Press 1973, p. 351.
Baldereschi, A., Lipari, N.O.: Phys. Rev. B9 (1974) 1525.
Sell, D.D., Casey, H.C., Wecht, K.W.: J. Appl. Phys. 45 (1974) 2650.
Schairer, W., Schmidt, M.: Phys. Rev. B10 (1974) 2501.
Ashen, D.J., Dean, P.J., Hurle, D.T.J., Mullin, J.B., White, A.M.: J. Phys. Chem. Solids 36 (1975) 1041.
Mullin, J.B., Straughan, B.W., Driscoll, C.M.H., Willoughby, A.F.W.: CRC Critical Reviews in Solid State Sciences, 1975, p. 441.
Mullin, J.B., Straughan, B.W., Driscoll, C.M.H., Willoughby, A.F.W.: Inst. Phys. Conf. Ser. 24 (1975) 275.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Hess, K., Bimberg, D., Lipari, N.O., Fischbach, J.K., Altarelli, M.: Proc. 13th Int. Conf. Phys. Semicond., F.G. Fumi ed., Rome 1976, p. 142.
Schairer, W., Bimberg, D., Kottier, W., Cho, K., Schmidt, M.: Phys. Rev. B13 (1976) 3452.
Skolnick, M.S., Jain, A.K., Stradling, R.A., Leotin, L., Ousset, J.C., Ashkennazy, S.J.: J. Phys. C9 (1976) 2809.
Tuck, B.: J. Phys. D9 (1976) 2061.
Borisova, L.A., Akkerman, Z.L., Dorokhov, A.N.: Izv. Akad. Nauk SSSR Neorg. Mater. 13 (1977) 908.
Borisova, L.A., Arkymkhin, P.I., Akkerman, Z.L.: Izv. Akad. Nauk SSSR Neorg. Mater. 14 (1978) 1790.
Cooke, R.A., Hoult, R.A., Kirkman, R.F., Stradling, R.A.: J. Phys. C11 (1978) 345.
Kirkman, R.F., Stradling, R.A., Lin-Chung, P.J.: J. Phys. C11 (1978) 419.
Lidow, A., Gibbons, J.F., Dehne, V.R., Evans, C.A.: Appl. Phys. Lett. 32 (1978) 572.
Tuck, B., Badawi, M.H.: J. Phys. D11 (1978) 2541.
Dobson, P.S., Fewster, P.F., Hurle, D.T.J., Hutchinson, P.W., Mullin, J.B., Straughan, B.W., Willoughby, A.F.W.: Inst. Phys. Conf. Ser. 45 (1979) 163.
Tuck, B., Adegboyega, G.A.: J. Phys. D12 (1979) 1895.
Chiang, T.C., Knapp, J.A., Aano, M., Eastman, D.E.: Phys. Rev. B21 (1980) 3513.
Fewster, P.F., Willoughby, A.F.W.: J. Cryst. Growth 50 (1980) 648.
Kasahara, J., Watanabe, N.: Jpn. J. Appl. Phys. 19 (1980) L151.
Kunzel, H., Ploog, K.: Appl. Phys. Lett. 37 (1980) 416.
Martin, G.M.: Thesis Univ. P. et M. Curie, 1980, unpublished.
Martin, G.M., Mitonneau, A., Pons, D., Mircea, A., Woodard, D.W.: J. Phys. C13 (1980) 3855.
Nichols, K.H., Yee, C.M.L., Wolfe, C.M.: Solid State Electron. 23 (1980) 109.
Tuck, B., Adegboyega, G.A.: J. Phys. D13 (1980) 433.
Wilson, R.G., Yasudev, P.K., Jamba, D.M., Evans, C.A., Deline, V.R.: Appl. Phys. Lett. 36 (1980) 215.
Tuck, B., Powell, R.G.: J. Phvs. D14 (1981) 317.
Blakemore, J.S.: J. Appl. Phys. 53 (1982) R123.
Baublitz, M., Ruoff, A.L.: J. Appl. Phys. 53 (1982) 6179.
Blakemore, J.S.: J. Appl. Phys. 53 (1982) 520.
Lin, L., Lin, Y., Zhong, X., Zhang, Y., Li, H.: J. Cryst. Growth 56 (1982) 344.
Leyral, P., Litty, F., Bremond, G., Nouailhat, A., Guillot, G.: Semi-Insulating III–V Materials, Evian 1982, Makram-Ebeid, S., Tuck, B. (eds.). Nantwich: Shiva Publishing, 1982, p. 192.
Mizutami, T., Honda, T., Ishida, S., Kawasaki, Y.: Solid-State Electron. 25 (1982) 885.
Soma, T., Satoh, J., Matsuo, H.: Solid State Commun. 42 (1982) 889.
Small, M.B., Potemski, R.M., Reuter, W., Ghez, R.: Appl. Phys. Lett. 41 (1982) 1068.
Ulrici, W.: Phys. Status Solidi (b) 114 (1982) K87.
Yan, Z.X., Milnes, A.G.: J. Electrochem. Soc. 129 (1982) 1353.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Büttner, H., Pollmann, J.: Physica 177&118 (1983) 278.
Lindemann, G., Lassnig, R., Seidenbusch, W., Gornik, E.: Phys. Rev. B28 (1983) 4693.
Lee, H.J., Look, D.C.: J. Appl. Phys. 54 (1983) 4446.
Palfrey, H.D., Brown, M., Willoughby, A.F.W.: J. Electron. Mater. 12 (1983) 863.
Sharma, A.C., Ravindra, N.M., Auluck, S., Srivastava, V.K.: Phys. Status Solidi (b) 120 (1983) 715.
Soma, T., Kagaya, H.-M.: Phys. Status Solidi (b) 118 (1983) 245.
Shanabrook, B.V., Klein, P.B., Bishop, S.G.: Physica B116 (1983) 444.
Winter, J.J., Leupold, H.A., Ross, R.L., Ballato, A.: J. Appl. Phys. 54 (1983) 5176.
Blakemore, J.S., Rahimi, S.: Semicond. Semimet. 20 (1984).
Greiner, M.E., Gibbons, J.F.: Appl. Phys. Lett. 44 (1984) 750.
Patel, C., Parker, T.J., Jamshidi, H., Sherman, W.F.: Phys. Status Solidi (b) 122 (1984) 461.
Skromme, B.J., Stillman, G.E.: Phys. Rev. B29 (1984) 1982.
Campi, D., Papuzza, C.: J. Appl. Phys. 57 (1985) 1305.
Drouhin, H.-J., Hermann, C., Lampel, G.: Phys. Rev. B31 (1985) 3859.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
Straub, D., Skibowski, M., Himpsel, F.J.: Phys. Rev. B32 (1985) 5237.
Brandt, C.D., Hennel, A.M., Pawlowicz, L.M., Wu, Y.T., Bryskiewicz, T., Lagowski, J., Gatos, H.C.: Appl. Phys. Lett. 48 (1986) 1162.
Brehme, S., Pickenhain, R.: Solid State Commun. 59 (1986) 469.
Deveaud, B., Lambert, B., Auvray, P., Hennel, A.M., Clerjaud, B., Naud, C.: J. Phys. C19 (1986) 1251.
Guillot, G., Bremond, G., Bencherifa, A., Nouailhat, A., Ulrici, W.: Semi-Insulating III–V Materials, Hakone 1986, Kukimoto, H., Miyazawa, S. (eds.) Ohmsha, Tokyo, 1986, p. 483.
Hennel, A.M., Brandt, C.D., Wu, Y.T., Bryskiewicz, T., Ko, K., Lagowski, J., Gatos, H.C.: Phys. Rev. B33 (1986) 7353.
87K Kavanagh, K.L.: Ph.D. Thesis, University of Cornell 1987.
References for 2.11
Eisen, F.H., Birchenall, C.E.: Acta Metall. 5 (1957) 265.
Boltaks, B.I., Gutorov, Yu.A.: Sov. Phys. Solid State 1 (1960) 930.
Novikova, S.I., Abrikosov, N.Kh.: Sov. Phys. Solid State (English Transl.) 5 (1963) 1558;
Novikova, S.I., Abrikosov, N.Kh. Fiz. Tverd. Tela 5 (1963) 2138.
Holland, M.G.: Proc. Int. Conf. Phys. Semicond., Paris 1964, Dunod, Paris 1964 p. 713.
Baxter, R.D., Bate, R.T., Reid, F.J.: J. Phys. Chem. Solids 26 (1965) 14.
Straumanis, M.E., Kim, C.D.: J. Appl. Phys. 36 (1965) 3822.
Kosicki, B.B., Paul. W.: Phys. Rev. Lett. 17 (1966) 246.
Bougnot, J., Szepessy, L., Du Cunha, S.F.: Phys. Status Solidi 26 (1968) K127.
Glazov, V.M., Chizhevskaya, S.N., Evgen’ev, S.B.: Zh. Fiz. Khim. 43 (1969) 373.
Pitt, G.D.: High Temp. — High Pressures 7 (1969) 111.
Burdiyan, I.I., Mal’tsev, S.B., Mironov, I.F., Shreter, Yu.G.: Sov. Phys. Semicond. (English Transl.) 5 (1972) 1734
Burdiyan, I.I., Mal’tsev, S.B., Mironov, I.F., Shreter, Yu.G.: Fiz. Tekh. Poluprovodn. 5 (1971) 1996.
Vul, A.Ya., Bir, G.L., Shmartsev, Y.V.: Sov. Phys. Semicond. (English Transl.) 4 (1971) 2005
Vul, A.Ya., Bir, G.L., Shmartsev, Y.V.: Fiz. Tekh. Poluprovodn. 4 (1970) 2331.
Jakowetz, W., Riihle, W., Breuninger, K., Pilkuhn, M.H.: Phys. Status Solidi (a) 12 (1972) 169.
Kyuregyan, A.S., Lazareva, I.K., Stuchebnikov, V.M., Yunovich, A.E.: Sov. Phys. Semicond. (English Transl.) 6 (1972) 208
Kyuregyan, A.S., Lazareva, I.K., Stuchebnikov, V.M., Yunovich, A.E.: Fiz Tekh. Poluprovodn. 6 (1971) 242.
Rühle, W., Jakowetz, W., Pilkuhn, M.H.: Proc. Int. Conf. Luminescence, Leningrad 1972, p. 444.
Reine, M., Aggarwal, R.L., Lax, B.: Phys. Rev. B5 (1972) 3033.
Rühle, W., Jakowetz, W., Wölk, C., Linnebach, R., Pilkuhn, M.: Phys. Status Solidi (b) 73 (1973) 225.
Hill, D.A., Schwerdtfeger, C.F.: J. Phys. Chem. Solids 35 (1974) 1533.
Du Cunha, S.F., Bougnot, J.: Phys. Status Solidi (a) 22 (1974) 205.
Boyle, W.F., Sladek, R.J.: Phys. Rev. B11 (1975) 2933.
Farr, M.K., Taylor, J.G., Sinha, S.K.: Phys. Rev. B11 (1975) 1587.
Uskov, V.A.: Sov. Phys. Semicond. 8 (1975) 1573.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson and A.C. Beer eds., Academic Press, New York and London 1975.
Aspnes, D.E., Olson, C.G., Lynch, D.W.: Phys. Rev. B14 (1976) 4450.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Hoo, K., Becker, W.M., Sun, R.-Y.: Solid State Commun. 18 (1976) 313.
Jakowetz, W., Barthruff, D., Benz, K.W.: Proc. 6th Int. Symp. on GaAs and related compounds, Husum, C. (ed.), London: Inst. Phys. 1976, p. 41.
Klein, P.B., Chang, R.K.: Phys. Rev. B14 (1976) 2498.
Dmoski, L., Baj, M., Kubalski, M., Piotrzkowski, R., Porowski, S.: Inst. Phys. Conf. Ser. 43 (1979) 417.
Mathur, P.C., Jain, S.: Phys. Rev. B19 (1979) 3152.
Chiang, T.C., Eastman, D.E.: Phys. Rev. B22 (1980) 2940.
Mathiot, D., Edelin, G.: Philos. Mag. A41 (1980) 447.
Joullié, A., Zein Eddine, A., Girault, B.: Phys. Rev. B23 (1981) 928.
Kagawa, T., Motosugi, G.: Jpn. J. Appl. Phys. 20 (1981) 597.
Lee, H.J., Woolley, J.C.: Can. J. Phys. 59 (1981) 1844.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Alibert, C., Joullié, A., Joullié, A.M., Ance, C.: Phys. Rev. B27 (1983) 4946.
Aoki, K., Anastassakis, E., Cardona, M.: Phys. Rev. B30 (1984) 681.
Kourkoutas, C.D., Bekris, P.D., Papaioannou, G.J., Euthymiou, P.C.: Solid State Commun. 49 (1984) 1071.
Heller, M.W., Hamerly, R.G.: J. Appl. Phys. 57 (1985) 4626.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
References for 2.12
Juza, R., Rabenau, A.: Z. Anorg. Allg. Chem. 285 (1956) 212.
Pearson, W.B.: A Handbook of Lattice Spacings and Structures of Metals and Alloys, Pergamon Press, Oxford-London 1967.
MacChesney, J.B., Bridenbaugh, P.M., O’Connor, P.B.: Mater. Res. Bull. 5 (1970) 783.
Hovel, H.J., Cuomo, J.J.: Appl. Phys. Lett. 20 (1972) 71.
Trainor, J.W., Rose, K.: J. Electron. Mater. 3 (1974) 821.
Osamura, K., Naka, S., Murakami, Y.: J. Appl. Phys. 46 (1975) 3432.
Marasina, L.A., Pichugin, E.G., Tlaczala, M.: Krist. Techn. 12 (1977) 541.
Tyagai, V.A., Evstigneev, A.M., Krasiko, A.N., Adreeva, A.F., Malakhov, V.Ya.: Sov. Phys. Semicond. (English Transl.) 11 (1977) 1257
Tyagai, V.A., Evstigneev, A.M., Krasiko, A.N., Adreeva, A.F., Malakhov, V.Ya.:Fiz. Tekh. Poluprovodn. 11 (1977) 2142.
Pichugin, I.G., Tlachala, M.: Izv. Akad. Nauk SSSR, Neorg. Mater. 14 (1978) 175.
Tansley, T.L., Foley, C.P.: Electron. Lett. 20 (1984) 1087.
Foley, C.P., Tansley, T.L.: Phys. Rev. B33 (1986) 1430.
References for 2.13
Folberth, O.G., Weiss, H.: Z. Naturforsch. 10a (1955) 615.
Weiss, H.: Z. Naturforsch. 11a (1956) 430.
Giesecke, G., Pfister, H.: Acta Crystallogr. 11 (1958) 369.
Hass, M., Henvis, B.W.: J. Phys. Chem. Solids 23 (1962) 1099.
Jamieson, J.C.: Science 139 (1983) 845.
Goldstein, B.: Phys. Rev. 121 (1961) 1305.
Chang, L.L., Casey, H.C.: Solid State Electron. 7 (1964) 481.
Turner, W.J., Reese, W.E., Pettit, G.D.: Phys. Rev. 136 (1964) A1467.
Aliev, S.A., Nashelskii, A.Ya., Shalyt, S.S.: Sov. Phys. Solid State (English Transl.) 7 (1965) 1287
Aliev, S.A., Nashelskii, A.Ya., Shalyt, S.S.: Fiz. Tverd. Tela 7 (1965) 1590.
Shaklee, K.L., Cardona, M., Pollak, F.H.: Phys. Rev. Lett. 16 (1966) 48.
Arseni, K.A., Boltaks, B.I., Gordin, V.L., Ugai, Ya.A.: Inorg. Mater. (USSR) 3 (1967) 1465.
Matatagui, E., Thompson, A.E., Cardona, M.: Phys. Rev. 176 (1968) 950.
Arseni, K.A., Boltaks, B.I.: Sov. Phys. Solid State 10 (1969) 2190.
Arseni, K.A.: Sov. Phys. Solid State 10 (1969) 2263.
Rembeza, S.I.: Sov. Phys. Semicond. 3 (1969) 519.
James, L.W., van Dyke, J.P., Herman, F., Chang, D.M.: Phys. Rev. B1 (1970) 3998.
Eaves, L., Stradling, R.A., Askenazy, S., Leotin, J., Portal, J.C., Ulmet, J.P.: J. Phys. C4 (1971) L42.
Kudman, I., Pfaff, R.J.: J. Appl. Phys. 43 (1972) 3760.
Onton, A., Chicotka, R.J., Yacoby, Y.: Proc. 11th Int. Conf. Phys. Semi,cond., Warsaw 1972, Polish Scientific Publishers, Warsaw 1972, p. 1023.
White, A.M., Dean, P.J., Taylor, L.L., Clarke, R.C., Ashen, D.J., Mullin, J.B.: J. Phys. C5 (1972) 1727.
Williams, E.W., Elder, W., Astles, M.G., Webb, M., Mullin, J.B., Straughan, B., Tulton, P.J.: J. Electrochem. Soc. 120 (1973) 1741.
Hoult, R.A., Stradling, R.A., Bradley, C.C.: J. Phys. C7 (1974) 1164.
Hess, K., Stath, N., Benz, K.W.: J. Electrochem. Soc. 121 (1974) 1208.
Leotin, J., Barbaste, R., Askenazy, S., Skolnick, M.S., Stradling, R.A., Tuchendler, J.: Solid State Commun. 15 (1974) 693.
Borcherds, P.H., Alfrey, G.F., Saunderson, D.H., Woods, A.D.B.: J. Phys. C8 (1975) 2022.
Rochon, P., Fortin, E.: Phys. Rev. B12 (1975) 5803.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Chelikowski, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Hess, K.: Dissertation, Stuttgart 1976.
White, A.M., Dean, P.J., Day, B.: Proc. XIIIth Int. Conf. on Physics of Semiconductors, Fumi, F.G. (ed.), Rome: Tipografia Marves 1976, p. 1037.
Bimberg, D., Hess, K., Lipari, N.O., Fischebach, J.U., Altarelli, M.: Physica B89 (1977) 139.
Merrill, L.: J. Phys. Chem. Ref. Data 6 (1977) 1205.
Vorobeev, L.E., Shturbin, A.V., Osokin, F.I.: Sov. Phys. Semicond. (English Transl.) 11 (1977) 879
Vorobeev, L.E., Shturbin, A.V., Osokin, F.I.: Fiz. Tekh. Poluprovodn. 11 (1977) 1497.
Dean, P.J., Robbins, D.J., Bishop, S.G.: J. Phys. C12 (1979) 5567.
Iseler, G.W.: Inst. Phys. Conf. Ser. 45 (1979) 144.
Camassel, J., Merle, P., Bayo, L., Mathieu, H.: Phys. Rev. B22 (1980) 2020.
Kushwaha, M.S., Kushwaha, S.S.: Canad. J. Phys. 58 (1980) 351.
Lee, H.J., Basinski, J., Juravel, L.Y., Woolley, J.C.: Canad. J. Phys. 58 (1980) 923.
Nichols, D.N., Rimai, D.S., Sladek, R.J.: Solid State Commun. 36 (1980) 667.
Trommer, R., Müller, H., Cardona, M.: Phys. Rev. B21 (1980) 4869.
Wada, O., Majerfeld, A., Choudhury, A.N.M.M.: J. Appl. Phys. 51 (1980) 423.
Walukiewicz, W., Lagowski, J., Jastrzebski, L., Rava, P., Lichtensteiger, M., Gatos, C.H., Gatos, H.C.: J Appl Phys. 51 (1980) 2659.
Eaves, L., Smith A.W., Williams, P.J., Cockayne, B., MacEwan, W.R.: J. Phys. C14 (1981) 5063.
Adamski, J.A.: J. Cryst. Growth 60 (1982) 141.
Burkhard, H., Dinges, H.W., Kuphal, E.: J. Appl. Phys. 53 (1982) 655.
Kelso, S.M., Aspnes, D.E., Pollack, M.A., Nahory, R.E.: Phys. Rev. B26 (1982) 6669.
Rhee, J.K., Battacharya, P.K.: J. Appl. Phys. 53 (1982) 4247.
Skolnick, M.S., Dean, P.J.: J. Phys. C15 (1982) 5863.
Soma, T., Satoh, J., Matsuo, H.: Solid State Commun. 42 (1982) 889.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Kirillov, D., Merz, J.L.: J. Appl. Phys. 54 (1983) 4104.
Williams, G.P., Cerrina, F., Anderson, J., Lapeyre, G.J., Smith, R.J., Hermanson, J., Knapp, J.A.: Physica 117B & 118B (1983) 350.
Maeda, Y., Taki, H., Sakata, M., Ohta, E., Yamada, S., Fukui, T., Miura, N.: J. Phys. Soc. Jpn. 53 (1984) 3553.
Kuznetsov, V.P., Messerer, M.A., Omel’yanovskii, E.M.: Fiz. Tekh. Poluprovodn. 18 (1984) 446
Kuznetsov, V.P., Messerer, M.A., Omel’yanovskii, E.M.: Sov. Phys. Semicond. (English Transl.) 18 (1984) 278.
Rojo, P., Leyral, P., Nouailhat, A., Guillot, G., Lambert, B., Deveaud, B., Coquille, R.: J. Appl. Phys. 55 (1984) 395.
Tmar, M., Gabriel, A., Chatillon, C., Ansara, I.: J. Cryst. Growth 68 (1984) 557.
Bugajski, M., Lewandowski, W.: J. Appl. Phys. 57 (1985) 521.
Campi, D., Papuzza, C.: J. Appl. Phys. 57 (1985) 1305.
Helm, M., Knap, W., Seidenbusch, W., Lassnig, R., Gornik, E.: Solid State Commun. 53 (1985) 547.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
Mathieu, H., Chen, Y., Camassel, J., Allegre, J., Robertson, D.S.: Phys. Rev. B32 (1985) 4042.
Zhu, L.D., Chan, K.T., Ballantyne, J.M.: Appl. Phys. Lett. 47 (1985) 47.
Brandt, C.D., Hennel, A.M., Pawlowicz, L.M., Wu, Y.T., Bryskiewicz, T., Lagowski, J., Gatos, H.C.: Appl. Phys. Lett. 48 (1986) 1162.
Deveaud, B., Plot, B., Lambert, B., Bremond, G., Guillot, G., Nouailhat, A., Clerjaud, B., Naud, C.: J. Appl. Phys. 59 (1986) 3126.
Juhl, A., Bimberg, D.: Semi-Insulating III–V Materials, Hakone 1986, Kukimoto, H., Miyazawa, S. (eds.), OHM, North-Holland, 1986, p. 477.
Lambert, B., Toudic, Y., Coquille, R., Grandpierre, G., Gauneau, M.: Defects in Semiconductors, Proc. 14th Internat. Conf. Defects in Semicond., Paris (1986), von Bardeleben, H.J. (ed.), Materials Science Forum 10 ··· 12, Trans. Tech. Publications, Switzerland, 1986, p. 651.
Meiners, L.G.: J. Appl. Phys. 59 (1986) 1611.
Parguel, V., Favennec, P.N., Gauneau, M., Rihet, Y., Chaplain, R., L’Haridon, H., Vaudry, C.: J. Appl. Phys. 62 (1987) 824.
Korona, K., Hennel, A.M.: Appl. Phys. Lett. 55 (1989) 1085.
Korona, K., Karpinska, K., Babinski, A., Hennel, A.M.: Acta Phys. Pol. A77 (1990) 71.
References for 2.14
Folberth, O.G., Madelung, O., Weiss, H.: Z. Naturforsch. 9a (1954) 954.
Sirota, N.N., Pashintsev, Yu.L: Inzh. Fiz. Zh. Akad. Nauk BSSR 1 (1958) 38.
Hass, M., Henvis, B.W.: J. Phys. Chem. Solids 23 (1962) 1099.
Schillmann, E.: Compound Semiconductors — Preparation of III–V Compounds, Vol. 1, Willardson, R.K., Goering, H.L. (eds.), New York: Reinhold 1962, p. 358.
Gerlich, D.: J. Appl. Phys. 34 (1963) 2915.
Mikhailova, M.P., Nasledov, D.N., Slobodchikov, S.V.: Sov. Phys. Solid State (English Transl.) 5 (1964) 1685
Mikhailova, M.P., Nasledov, D.N., Slobodchikov, S.V.: Fiz. Tverd. Tela 5 (1963) 2317.
Ozolin’sh, J.V., Averkieva, G.K., Ilvin’sh, A.F., Goryunova, N.A.: Sov. Phys. Cryst. (English Transl.) 7 (1963) 691.
Arseni, K.A., Boltaks, B.I., Rembeza, S.I.: Sov. Phys. Solid State 8 (1967) 2248.
Boltaks, B.I., Rembeza, S.I., Sharma, B.L.: Sov. Phys. Solid State 1 (1967) 196.
Boltaks, B.I., Rembeza, S.I.: Sov. Phys. Solid State 8 (1967) 2117.
Pidgeon, C.R., Groves, S.H., Feinleib, J.: Solid State Commun. 5 (1967) 677.
Rembeza, S.I.: Sov. Phys. Solid State 1 (1967) 516.
Sparks, P.W., Swenson, C.A.: Phys. Rev. 163 (1967) 779.
Glazov, V.M., Chizhevskaya, S.N., Evgen’ev, S.B.: Zh. Fiz. Khim. 43 (1969) 373.
Kato, H., Yokozawa, M., Kohara, R., Okabayashi, Y., Takayanagi, S.: Solid-State Electron. 12 (1969) 137.
Reifenberger, B., Keck, M.J., Trivisoono, J.: J. Appl. Phys. 40 (1969) 5403.
Zucca, R.R.L., Shen, Y.R.: Phys. Rev. 155 (1970) 2668.
Sharma, B.L., Purohit, R.K., Mukerjee, S.N.: J. Phys. Chem. Solids 32 (1971) 1397.
Tamarin, P.V., Shalyt, S.S.: Sov. Phys. Semicond. (English Transl.) 5 (1971) 1097
Tamarin, P.V., Shalyt, S.S.: Fiz. Tekh. Poluprovodn. 5 (1971) 1245.
Casey, H.C.: Quoted unpublished measurements of M.G. Buehler and G.L. Pearson, in “Atomic Diffusion in Semiconductors”, Shaw, D. (ed.), New York: Plenum Press 1973, p. 351.
Guseva, M.I., Zotova, N.V., Koval, A.V., Nasledov, D.N.: Sov. Phys. Semicond. (English Transl.) 8 (1974) 34
Guseva, M.I., Zotova, N.V., Koval, A.V., Nasledov, D.N.: Fiz. Tekh. Poluprovodn. 8 (1974) 59.
Ley, L., Pollak, R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A.: Phys. Rev. B9 (1974) 600.
Guseva, M.I., Zotova, N.V., Koval, A.V., Nasledov, D.N.: Sov. Phys. Semicond. (English Transl.) 8 (1975) 1323
Guseva, M.I., Zotova, N.V., Koval, A.V., Nasledov, D.N.: Fiz. Tekh. Poluprovodn. 8 (1974) 2034.
Rode, D.L.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Varfolomeev, A.V., Seisyan, R.P., Yakimova, R.N.: Sov. Phys. Semicond. (English Transl.) 9 (1975) 530
Varfolomeev, A.V., Seisyan, R.P., Yakimova, R.N.: Fiz. Tekh. Poluprovodn. 9 (1975) 804.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson, A.C. Beer eds., Academic Press, New York 1975.
Chelikowsky, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Glazov, V.M., Akopyan, R.A., Shvedkov, E.I.: Sov. Phys.-Semicond. 10 (1976) 378.
Zotova, N.V., Karataev, V.V., Koval, A.V.: Sov. Phys. Semicond. (English Transl.) 9 (1976) 1275
Zotova, N.V., Karataev, V.V., Koval, A.V.: Fiz. Tekh. Poluprovodn. 9 (1975) 1944.
Lukeš, F.: Phys. Status Solidi (b) 84 (1977) K113.
Semikolenova, N.A., Nesmelowa, I.M., Khabarov, E.N.: Sov. Phys. Semicond. (English Transl.) 12 (1978) 1139
Semikolenova, N.A., Nesmelowa, I.M., Khabarov, E.N.: Fiz. Tekh. Poluprovodn. 12 (1978) 1915.
Carles, R., Saint-Cricq, N., Renucci, J.B., Renucci, M.A., Zwick, A.: Phys. Rev. B22 (1980) 4804.
Horikoshi, Y., Saito, H., Takanashi, Y.: Jpn. J. Appl. Phys. 20 (1981) 437.
Takayama, J., Shimomae, K., Hamaguchi, C.: Jpn. J. Appl. Phys. 20 (1981) 1265.
Pascher, H.: Opt. Commun. 41 (1982) 106.
Yang June Jung, Byung Ho Kim, Hyung Jae Lee, Wolley, J.C.: Phys. Rev. 26 (1982) 3151.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Kanskaya, L.M., Kokhanovskii, S.I., Seisyan, R.P., Efros, Al.L., Yukish, V.A.: Sov. Phys. Semicond. (English Transl.) 17 (1983) 449
Kanskaya, L.M., Kokhanovskii, S.I., Seisyan, R.P., Efros, Al.L., Yukish, V.A.: Fiz. Tekh. Poluprovodn. 17 (1983) 718.
Williams, G.P., Cerrina, F., Anderson, J., Lapeyre, G.J., Smith, R.J., Hermanson, J., Knapp, J.A.: Physica 117B & 118B (1983) 350.
Vohra, Y.K., Weir, ST., Ruoff, A.L.: Phys. Rev. B31 (1985) 7344.
References for 2.15
Madelung, O., Weiss, H.: Z. Naturforsch. 9a (1954) 527.
Boltaks, B.I., Kulikov, G.S.: Sov. Phys. Tech. Phys. 2 (1957) 67.
Eisen, F.H., Birchenall, C.E.: Acta Metall. 5 (1957) 265.
Gibbons, D.F.: Phys. Rev. 112 (1958) 779.
Putley, E.H.: Proc. Phys. Soc. 73 (1959) 128.
Slutsky, L.J., Garland, C.W.: Phys. Rev. 113 (1959) 167.
Volokobinskaya, N.I., Galavanov, V.V., Nasledov, D.N.: Sov. Phys. Solid State (English Transl.) 1 (1959) 687
Volokobinskaya, N.I., Galavanov, V.V., Nasledov, D.N.: Fiz. Tverd. Tela 1 (1959) 756.
Sze, S.M., Wei, L.Y.: Phys. Rev. 124 (1961) 84.
Hass, M., Henvis, B.W.: J. Phys. Chem. Solids 23 (1962) 1099.
Watt, L.A.K., Chen, W.S.: Bull. Am. Phys. Soc. 7 (1962) 89.
Boltaks, B.I., Sokolov, V.I.: Sov. Phys. Solid State 5 (1963) 785.
Bagguley, D.M.S., Robinson, M.L.A., Stradling, R.A.: Phys. Lett. 6 (1963) 143.
Stocker, HJ.: Phys. Rev. 130 (1963) 2160.
Boltaks, B.I., Sokolov, V.I.: Sov. Phys. solid State 6 (1964) 600.
Gusev, I.A., Murin, A.N.: Sov. Phys. Solid State 6 (1964) 1229.
Madelung, O.: Physics of III–V Compounds, J. Wiley & Sons, New York 1964.
Schönwald, H., Z. Naturforsch. 19a (1964) 1276.
Straumanis, M.E., Kim, C.D.: J. Appl. Phys. 36 (1965) 3822.
Takobutake, T., Ikari, H., Uyeda, Y.: Jpn. J. Appl. Phys. 5 (1966) 839.
Kendall, D.L.: Semiconductors and Semimetals, Vol. 4, Willardson, R.K., Beer, A.C. (eds.), London: Academic Press 1968, p. 163.
Rekalova, G.I., Shokov, A.A., Gavrushko, V.V.: Sov. Phys. Semicond. 2 (1969) 1452.
Cunningham, R.W., Gruber, J.B.: J. Appl. Phys. 41 (1970) 1804.
Dashevskii, M.Ya., Ivleva, V.S., Korl, L.Ya., Kurilenko, I.N., Litvak-Gorskaya, L.B., Mitrofanova, R.S., Fridlyand, E.Yu.: Sov. Phys. Semicond. (English Transl.) 5 (1971) 757
Dashevskii, M.Ya., Ivleva, V.S., Korl, L.Ya., Kurilenko, I.N., Litvak-Gorskaya, L.B., Mitrofanova, R.S., Fridlyand, E.Yu.: Fiz. Tekh. Poluprovodn. 5 (1971) 858.
Kosarev, V.V., Tamarin, P.V., Shalyt, S.S.: Phys. Status Solidi (b) 44 (1971) 525.
Price, D.L., Rowe, J.M., Nicklow, R.M.: Phys. Rev. B3 (1971) 1268.
Rode, D.L.: Phys. Rev. B3 (1971) 3287.
Murzin, V.N., Demishina, A.I., Umarov, L.M.: Sov. Phys. Semicond. (English Transl.) 6 (1972) 419
Murzin, V.N., Demishina, A.I., Umarov, L.M.: Fiz. Tekh. Poluprovodn. 6 (1972) 488.
Unpublished results by D.L. Kendall, quoted by Casey, H.C.: Atomic Diffusion in Semiconductors, Shaw, D. (ed.), New York: Plenum Press 1973, p. 351.
Hultgren, R., Desai, P.D., Hawkins, D.T., Gleiser, M., Kelly, K.K., Wagman, D.D.: Selected Values of the Thermodynamic Properties of Binary Alloys, American Society of Metals, Metal Park, Ohio 1973.
Kaplan, R.: Solid State Commun. 12 (1973) 191.
Lipari, N.O.: Ref. 6 in [73K].
Vinogradova, K.I., Ivleva, V.S., Il’menkov, G.V., Nasledov, D.N., Smetannikova, Yu.S., Tashkhodshaev, T.K.: Sov. Phys. Semicond. (English Transl.) 6 (1973) 1595
Vinogradova, K.I., Ivleva, V.S., Il’menkov, G.V., Nasledov, D.N., Smetannikova, Yu.S., Tashkhodshaev, T.K.: Fiz. Tekh. Poluprovodn. 6 (1973) 1845.
Vinogradova, K.L, Nasledov, D.N., Smetannikova, Yu.S., Tashkhodshaev, T.K.: Sov. Phys. Solid State (English Transl.) 15 (1973) 212
Vinogradova, K.L, Nasledov, D.N., Smetannikova, Yu.S., Tashkhodshaev, T.K.: Fiz. Tverd. Tela 15 (1973) 295.
Ley, L., Pollak, R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A.: Phys. Rev. B9 (1974) 600.
Filipchenko, A.S., Nasledov, D.N.: Phys. Status Solidi (a) 27 (1975) 11.
Wiley, J.D.: in “Semiconductors and Semimetals”, Vol. 10, R.K. Willardson. A.C. Beer eds., Academic Press, New York and London, 1975.
Chelikowski, J.R., Cohen, M.L.: Phys. Rev. B14 (1976) 556.
Stillman, G.E., Wolfe, C.M., Dimmock, J.O.: in “Semiconductors and Semimetals”, Vol. 12, R.K. Willardson, A.C. Beer eds., Academic Press, New York and London, 1977.
Yu, S.C., Spain, I.L., Skelton, E.F.: J. Appl. Phys. 49 (1978) 4741.
Blaut-Blachev, A.N., Ivleva, V.S., Selyanina, V.I.: Sov. Phys. Semicond. 13 (1979) 1342.
Kurilenko, I.N., Litvak-Gorskaya, L.B., Lugovaya, G.E.: Sov. Phys. Semicond. (English Transl.) 13 (1979) 906
Kurilenko, I.N., Litvak-Gorskaya, L.B., Lugovaya, G.E.: Fiz. Tekh. Poluprovodn. 13 (1979) 1556.
Kurilenko, I.N., Litvak-Gorskaya, L.B., Lugovaya, G.E.: Kaskaya, L.M., Kokhanovskii, S.I., Seisyan, R.P.: Sov. Phys. Semicond. (English Transl.) 13 (1979) 234
Kurilenko, I.N., Litvak-Gorskaya, L.B., Lugovaya, G.E.: Kaskaya, L.M., Kokhanovskii, S.I., Seisyan, R.P.: Fiz. Tekh. Poluprovodn. 13 (1979) 2424.
Zvonkov, B.N., Salashchenko, N.N., Filatov, O.N.: Sov. Phys. Solid State (English Transl.) 21 (1979) 777
Zvonkov, B.N., Salashchenko, N.N., Filatov, O.N.: Fiz. Tverd. Tela 21 (1979) 1344.
Dixon, J.R., Furdyna, J.K.: Solid State Commun. 35 (1980) 195.
Propov, V.V., Kosarev, V.V.: Phys. Status Solidi (a) 58 (1980) 231.
Seiler, D.G., Goodwin, M.W., Miller, A.: Phys. Rev. Lett. 44 (1980) 807.
Mattausch, H.J., Aspnes, D.E.: Phys. Rev. B23 (1981) 1896.
Goodwin, M.W., Seiler, D.G., Weiler, M.H.: Phys. Rev. B25 (1982) 6300.
Aspnes, D.E., Studna, A.A.: Phys. Rev. B27 (1983) 985.
Goodwin, M.W., Seiler, D.G.: Phys. Rev. B27 (1982) 3451.
Höchst, H., Hernández-Calderón, I.: Surf. Sci. 126 (1983) 25.
Kanskaya, L.M., Kokhanovskii, S.I., Seisyan, R.P., Efros, ALL.: Phys. Status Solidi (b) 118 (1983) 447.
Littler, C.L., Seiler, D.G., Kaplan, R., Wagner, R.J.: Phys. Rev. B27 (1983) 7473.
Zengin, D.M.: J. Phys. D16 (1983) 653.
Chelikowski, J.R., Cohen, M.L.: Phys. Rev. B30 (1984) 4828.
Liarokapis, W., Anastassakis, E.: Phys. Rev. B30 (1984) 2270.
Kopylov, A.A.: Solid State Commun. 56 (1985) 1.
Logothetidis, S., Vina, L., Cardona, M.: Phys. Rev. B31 (1985) 947.
Littler, C.L., Seiler, D.G.: Appl. Phys. Lett. 46 (1985) 986.
Ram, R.K., Kushwara, S.S.: J. Phys. Soc. Jpn. 54 (1985) 617.
Warmenbol, P. Peeters, F.M., Devreese, J.T., Algebra, G.E., van Welzenis, R.G.: Phys. Rev. B31 (1985) 5285.
References for 2.16.1
Lucovski, G., Chen, M.F.: Solid State Commun. 8 (1970) 1397.
Lorenz, M.R., Onton, A.: Proc. 10th Int. Conf. Semicond. Phys., Cambridge Mass., USAEC New York 1970, p. 444.
Onton, A., Chicotka, R.J.: J. Appl. Phys. 41 (1970) 4305.
Olsen, G.H., Nuese, C.J., Smith, R.T.: J. Appl. Phys. 49 (1978) 5523.
Kano, H., Miyazawa, S., Sugiyama, K.: Jpn. J. Appl. Phys. 18 (1979) 2183.
Alavi, K., Aggarwal, R.L., Groves, S.H.: Phys. Rev. B21 (1980) 1311.
Roth, A.P., Keeler, W.J., Fortin, E.: Can. J. Phys. 58 (1980) 560.
Oliver, J.D.: J. Cryst. Growth 54 (1981) 64.
Roberts, J.S., Scott, G.B., Gowers, J.P.: J. Appl. Phys. 52 (1981) 4018.
Saxena, A.K.: Phys. Status Solidi (b) 105 (1981) 777.
Alibert, C., Joullié, A., Joullié, A.M., Ance, C.: Phys. Rev. B27 (1983) 4946.
Biryulin, Yu.F., Ganina, N.V., Mil’vidskii, M.G., Chaldychev, V.V., Shmartsev, Yu.V.: Sov. Phys. Semicond. (English Transl.) 17 (1983) 68
Biryulin, Yu.F., Ganina, N.V., Mil’vidskii, M.G., Chaldychev, V.V., Shmartsev, Yu.V.: Fiz. Tekh. Poluprovodn. 17 (1983) 108.
Biryulin, Yu.F., Vul’, S.P., Chaldychev, V.V., Shmartsev, Yu.V.: Sov. Phys. Semicond. (English Transl.) 17 (1983) 65;
Biryulin, Yu.F., Vul’, S.P., Chaldychev, V.V., Shmartsev, Yu.V.: Fiz. Tekh. Poluprovodn. 17 (1983) 103.
Bugajski, M., Kontkiewicz, A.M., Mariette, H.: Phys. Rev. B28 (1983) 7105.
Goetz, K.-H., Bimberg, D., Jiirgensen, H., Selders, J., Solomonov, A.V., Glinskii, G.F., Razhegi, M.: J. Appl. Phys. 54 (1983) 4543.
Pearsall, T.P., Carles, R., Portal, J.C.: Appl. Phys. Lett. 42 (1983) 436.
Davies, G.J., Kerr, T., Tuppen, C.G., Wakefield, B., Andrews, D.A.: J. Vac. Sci. Technol. B2 (1984) 219.
Wakefield, B., Halliwell, M.A.G., Kerr, T., Andrews, D.A., Davies, G.J., Wood, D.R.: Appl. Phys. Lett. 44 (1984) 341.
Yu, P.W., Kuphal, E.: Solid State Commun. 49 (1984) 907.
Adachi, S.: J. Appl. Phys. 58 (1985) R1.
Chan, K.T., Zhu, L.D., Ballantyne, J.M.: Appl. Phys. Lett. 47 (1985) 44.
Kuo, C.P., Vong, S.K., Cohen, R.M., Stringfellow, G.B.: J. Appl. Phys. 57 (1985) 5428.
Sarkar, C.K., Nicholas, R.J., Portal, J.C., Razhegi, M., Chevrier, J., Massies, J.: J. Phys. C18 (1985) 2667.
Zarrabi, H.J., Alfano, R.R.: Phys. Rev. B32 (1985) 3947.
References for 2.16.2
Nahory, R.L., Pollack, M.A., DeWinter, J.C., Williams, K.M.: J. Appl. Phys. 48 (1977) 513.
Nicholas, R.J., Stradling, R.A., Ramage, J.C.: J. Phys. C12 (1979) 1641.
Capizzi, M., Modesti, S., Martelli, F., Frova, A.: Solid State Commun. 39 (1981) 333.
Devlin, P., Heravi, H.M., Woolley, J.C.: Can. J. Phys. 59 (1981) 939.
Kobayashi, N., Fukui, T.: J. Cryst. Growth 67 (1984) 513.
Cherng, M.J., Stringfellow, G.B., Cohen, R.M.: Appl. Phys. Lett. 44 (1984) 677.
Wang, P.J., Wessels, B.W.: Appl. Phys. Lett. 44 (1984) 766.
References for 2.16.3
Laufer, P.M., Pollack, M.A., Nahory, R.E.: Solid State Commun. 36 (1980) 419.
Perea, E.H., Mendez, E.E., Fonstad, C.G.: Appl. Phys. Lett. 36 (1980) 978.
Restorff, J.B., Houston, B., Allgaier, R.S.: J. Appl. Phys. 51 (1980) 2277.
Adachi, S.: J. Appl. Phys. 53 (1982) 8775.
Adachi, S.: J. Appl. Phys. 53 (1982) 5863.
Pearsall, T.P.: “GalnAsP Alloy Semiconductors”, T.P. Pearsall ed., J. Wiley & Sons, New York 1982, p. 295.
Kuphal, E.: J. Cryst. Growth 67 (1984) 441.
Kelso, S.M., Aspnes, D.E., Olson, C.G., Lynch, D.W., Bachmann, K.J.: Proc. SPIE Int. Soc. Opt. Eng. 452 (1984) 200.
Mukai, S., Yajima, H., Mitsuhashi, Y., Yanagisawa, S., Kutsuwada, N.: Appl. Phys. Lett. 44 (1984) 904.
References for 2.16.4
Zbitnew, K., Woolley, J.C.: J. Appl. Phys. 52 (1981) 6611.
Asahi, H., Kawamura, Y., Nagai, H.: J. Appl. Phys. 53 (1982) 4928.
Olego, D., Chang, T.Y., Silberg, E., Caridi, E.A., Pinczuk, A.: Int. Phys. Conf. Ser. No. 65, Int. Symp. GaAs and Related Compounds, Albuquerque 1982, p. 195.
Olego, D., Chang, T.Y., Silberg, E., Caridi, E.A., Pinczuk, A.: Appl. Phys. Lett. 41 (1982) 476.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Madelung, O. (1996). Physical data. In: Madelung, O. (eds) Semiconductors — Basic Data. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-97675-9_2
Download citation
DOI: https://doi.org/10.1007/978-3-642-97675-9_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-97677-3
Online ISBN: 978-3-642-97675-9
eBook Packages: Springer Book Archive