The Internal Field in Semiconductors

Abstract

Let us consider a semiconductor of length l in x-direction, which is doped with a concentration of electrically active impurities $C\left( x \right) = C_D^ + \left( x \right) - C_A^ - \left( x \right)$. The $C_A^ - ,C_D^ +$ are the acceptor and donor impurity concentrations respectively and are independent on y and z. Let this semiconductor be connected to an external potential U(x) with U(0) = Uo and U(l) = 0. Then, if the semiconductor has sufficiently large dimensions in y- and z-directions, all physical properties will depend only on x, and we can study it as a one-dimensional object.