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Silicon Dioxide

  • K. S. Song
  • Richard T. Williams
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 105)

Abstract

It is only recently that self-trapping of excitons and creation of lattice defects by electronic excitation have been recognized in SiO2. Now that both phenomena have been established as consequences of ionizing [7.1–7] and in some cases specifically valence [7.8–10] excitation of quartz and fused silica, rapid progress is being made on theoretical and experimental fronts. Because of the important technological roles of SiO2 in electronics and optics, the progress is watched with more than a little interest.

Keywords

Transient Absorption Alkali Halide Frenkel Defect Fractional Volume Change Alkaline Earth Fluoride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • K. S. Song
    • 1
  • Richard T. Williams
    • 2
  1. 1.University of OttawaOttawaCanada
  2. 2.Wake Forest UniversityWinston-SalemUSA

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