It is only recently that self-trapping of excitons and creation of lattice defects by electronic excitation have been recognized in SiO2. Now that both phenomena have been established as consequences of ionizing [7.1–7] and in some cases specifically valence [7.8–10] excitation of quartz and fused silica, rapid progress is being made on theoretical and experimental fronts. Because of the important technological roles of SiO2 in electronics and optics, the progress is watched with more than a little interest.
KeywordsTransient Absorption Alkali Halide Frenkel Defect Fractional Volume Change Alkaline Earth Fluoride
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