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Postgrowth Characterization Methods

  • Marian A. Herman
  • Helmut Sitter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 7)

Abstract

Devices grown by MBE include complex multilayer structures, besides layers of metals and dielectrics grown on single-crystal substrates. The technology of ion implantation even allows buried layer structures to be created. Two recently published more complicated structures are shown schematically in Fig. 5.1: (a) separate absorption grading and multiplication avalanche photodiode (SAGM APD) [5.1], (b) graded-index (GRIN) separate-confinement heterostructure (SCH) multi-quantum-well (MQW) laser [5.2].

Keywords

Epitaxial Layer Auger Electron Capture Cross Section Deep Level Transient Spectroscopy High Electron Mobility Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • Marian A. Herman
    • 1
  • Helmut Sitter
    • 2
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawaPoland
  2. 2.Institut für ExperimentalphysikJohannes-Kepler-UniversitätLinz/AuhofAustria

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